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    Kyocera AVX Components 800B6R8BT500T

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 6.8pF Tol 0.1pF
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    Kyocera AVX Components 800B6R8BT500XT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 500volts 6.8pF NP0
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    TTI 800B6R8BT500XT Reel 500
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    Kyocera AVX Components 800B6R8BT500XTV

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 6.8pF Tol 0.1pF Las Mkg Vertical
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    TTI 800B6R8BT500XTV Reel 500
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    Kyocera AVX Components 800B6R8BW500T

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 6.8pF Tol 0.1pF
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    TTI 800B6R8BW500T Reel 500
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    ATC800B6R8 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz EAR99 RF3931 DS120306

    C3225X7R2A225KT

    Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 C3225X7R2A225KT 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0

    MRF6VP3450H

    Abstract: MRF6VP3450H 470-860 MRF6VP3450HR5 DVB-T Schematic MRF6Vp3450 MRF6VP3450HR6 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 4, 4/2010 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6VP3450H MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450H MRF6VP3450H 470-860 DVB-T Schematic MRF6Vp3450 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT

    amplifier 900mhz

    Abstract: No abstract text available
    Text: RF3931 30W GaN Wideband Power Amplifier Package: Hermetic 2-Pin Flanged Ceramic Features • Broadband Operation DC to 3.5GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology  Gain = 15dB at 2GHz  48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz RF3931 DS130501 amplifier 900mhz

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

    simple power supply schematic diagram

    Abstract: RF3931S2 ATC800A3R3BT
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz RF3931 DS120406 simple power supply schematic diagram RF3931S2 ATC800A3R3BT

    RF3931

    Abstract: 46dBm
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN


    Original     		PDF RF3931 900MHz RF3931 DS110317 46dBm

    Untitled

    Abstract: No abstract text available
    Text: NPT2022 Gallium Nitride 48V, 100W, DC-2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2 GHz 48V Operation Industry Standard Plastic Package


    Original     		PDF NPT2022 NPT2022 NDS-038

    MRF6Vp3450

    Abstract: MRF6VP3450HR5 atc800b4r7j500xt ATC800B MRF6VP3450H UUD1V220MCL1GS A114 JESD22 MRF6VP3450HR6 MRF6VP3450HSR5
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 3, 7/2009 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6VP3450H MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6Vp3450 atc800b4r7j500xt ATC800B MRF6VP3450H UUD1V220MCL1GS A114 JESD22 MRF6VP3450HSR5

    DVB-T Schematic

    Abstract: MRF6VP3450HR6 atc100B120GT500XT atc100B100GT500XT MRF6Vp3450 ATC800B class B push pull power amplifier dvb-t transmitters MRF6VP3450H UUD1V220MCL1GS
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 2.1, 11/2008 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6VP3450H MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 DVB-T Schematic atc100B120GT500XT atc100B100GT500XT MRF6Vp3450 ATC800B class B push pull power amplifier dvb-t transmitters MRF6VP3450H UUD1V220MCL1GS

    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz DS120406

    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz RF3931 DS120202

    ATC800B5R6

    Abstract: ATC800B6R8 ATC800B120
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features „ „ „ „ „ Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN


    Original     		PDF RF3931 900MHz RF3931 DS111026 ATC800B5R6 ATC800B6R8 ATC800B120

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20S015N Rev. 1, 11/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz.


    Original     		PDF AFT20S015N AFT20S015NR1 AFT20S015GNR1 AFT20S015NR1

    Untitled

    Abstract: No abstract text available
    Text: RF3931 RF3931 30W GaN Wideband Power Amplifier The RF3931 is a 48V 30W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier


    Original     		PDF RF3931 RF3931 DS130905

    GaN ADS

    Abstract: ATC800B ATC800B120 ATC800B6R8 RF3931 EAR99 ECE-V1HA101UP ERJ8GEYJ100V
    Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features      Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN


    Original     		PDF RF3931 900MHz EAR99 RF3931 130mA DS101115 GaN ADS ATC800B ATC800B120 ATC800B6R8 ECE-V1HA101UP ERJ8GEYJ100V

    AFT20S015N

    Abstract: AFT20S015GNR1 capacitor 475 aft20s015gn AFT20S015 ATC100B6R8CT500XT ATC800B C3225X7R1H225KT MCGPR63V477M13X26-RH capacitor 10 MF
    Text: Document Number: AFT20S015N Rev. 0, 4/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 1.5 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2690 MHz.


    Original     		PDF AFT20S015N O-270-2 AFT20S015NR1 AFT20S015NR1 AFT20S015GNR1 AFT20S015GNR1 capacitor 475 aft20s015gn AFT20S015 ATC100B6R8CT500XT ATC800B C3225X7R1H225KT MCGPR63V477M13X26-RH capacitor 10 MF

    MRFE6VP8600H

    Abstract: MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20
    Text: Document Number: MRFE6VP8600H Rev. 0, 9/2011 Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20

    MRF6VP3450H

    Abstract: ATC800B DVB-T Schematic MRF6Vp3450 A114 JESD22 MRF6VP3450HR5 MRF6VP3450HR6 MRF6VP3450HSR5 MRF6VP3450HSR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 2, 9/2008 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6VP3450H MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450H ATC800B DVB-T Schematic MRF6Vp3450 A114 JESD22 MRF6VP3450HSR5

    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz RF3931 DS121207