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ATC600S3R0 Price and Stock

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American Technical Ceramics Corp ATC600S3R0AW250XT CAPACITOR, CERAMIC, 250 V, C0G, 0.000003 uF, SURFACE MOUNT, 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC600S3R0AW250XT		597			1 $0.72 10 $0.72 100 $0.72 1000 $0.3 10000 $0.3	Buy Now
	ATC600S3R0AW250XT		316			1 $1.2 10 $1.2 100 $0.6 1000 $0.6 10000 $0.6	Buy Now
	ATC600S3R0AW250XT		316			1 $1.2 10 $1.2 100 $0.6 1000 $0.6 10000 $0.6	Buy Now
American Technical Ceramics Corp ATC600S3R0BW250XT CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 250V, 3.333% +TOL, 3.333% -TOL, C0G, 30PPM/CEL TC, 0.000003UF, SURFACE MOUNT, 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC600S3R0BW250XT		360			1 $1.3785 10 $1.3785 100 $0.6893 1000 $0.5514 10000 $0.5514	Buy Now
	ATC600S3R0BW250XT		360			1 $1.3785 10 $1.3785 100 $0.6893 1000 $0.5514 10000 $0.5514	Buy Now
	ATC600S3R0BW250XT		80			1 $1.4 10 $1.4 100 $0.7 1000 $0.7 10000 $0.7	Buy Now
American Technical Ceramics Corp ATC600S3R0CT250T CAPACITOR, CERAMIC, 250 V, C0G, 0.000003 uF, SURFACE MOUNT, 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC600S3R0CT250T		275			1 $0.75 10 $0.75 100 $0.5 1000 $0.35 10000 $0.35	Buy Now
Kyocera AVX Components 600S3R0BT250T Silicon RF Capacitors / Thin Film 250V 3pF Tol 0.1pF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	600S3R0BT250T	Reel	3,500		500	1 - 10 - 100 - 1000 $0.478 10000 $0.293	Buy Now
Kyocera AVX Components 600S3R0BT250XT Silicon RF Capacitors / Thin Film 250volts 3pF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	600S3R0BT250XT	Reel	1,000		500	1 - 10 - 100 - 1000 $0.505 10000 $0.442	Buy Now

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ATC600S3R0 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor SMD P2F Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website	Original	FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE	PDF
b0912 Abstract: No abstract text available Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T1G6003028-FS T1G6003028-FS b0912	PDF
140-A525-SMD Abstract: Z1 SMD agere c8 c1 atc600 AGRB03GM JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa Text: Preliminary Data Sheet November 2004 AGRB03GM 3 W, 100 MHz—2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRB03GM is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor	Original	AGRB03GM AGRB03GM IS-95 DS04-259RFPP 140-A525-SMD Z1 SMD agere c8 c1 atc600 JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa	PDF
Untitled Abstract: No abstract text available Text: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •	Original	T2G6003028-FS T2G6003028-FS TQGaN25	PDF
ATC600S3R0 Abstract: ATC600S0R3 ATC600S0R2 37C0064 Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T1G6003028-FL T1G6003028-FL ATC600S3R0 ATC600S0R3 ATC600S0R2 37C0064	PDF
SMD-B 053 Abstract: FPD4000AF BTS 308 atc600 ATC600S1R0 Text: FPD4000AF Datasheet v2.1 4W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: High power AF package 36.5 dBm Output Power P1dB 10.5 dB Power Gain (G1dB) 49 dBm Output IP3 10V Operation 45% Power-Added Efficiency Usable Gain to 4GHz GENERAL DESCRIPTION:	Original	FPD4000AF FPD4000AF FPD4000AF-EB EB-2000AS-AB 880MHz) EB-2000AS-AA 85GHz) EB-2000AS-AC EB-2000AS-AE SMD-B 053 BTS 308 atc600 ATC600S1R0	PDF
ATC600S0R Abstract: No abstract text available Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T1G6003028-FS T1G6003028-FS ATC600S0R	PDF
Untitled Abstract: No abstract text available Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T1G6003028-FL T1G6003028-FL	PDF
Untitled Abstract: No abstract text available Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • 1 1 Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers 1 1 Product Features1	Original	T1G6003028-FL T1G6003028-FL	PDF
transistor SMD P2F Abstract: atc600s smd p2f transistor smd marking code j6 PHEMT marking code a atc600 smd p2f FPD4000AF MIL-HDBK-263 Filtronic Components Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website	Original	FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F atc600s smd p2f transistor smd marking code j6 PHEMT marking code a atc600 smd p2f MIL-HDBK-263 Filtronic Components	PDF
Untitled Abstract: No abstract text available Text: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •	Original	T2G6003028-FS T2G6003028-FS	PDF
Untitled Abstract: No abstract text available Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • 1 1 Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers 1 1 Product Features1	Original	T1G6003028-FS T1G6003028-FS	PDF
transistor SMD P2F Abstract: smd p2f transistor atc600s FPD4000AF PHEMT marking code a smd marking code j6 smd p2f pHEMT FET marking A transistor STD P2F smd code marking C8 Text: FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website	Original	FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F smd p2f transistor atc600s PHEMT marking code a smd marking code j6 smd p2f pHEMT FET marking A transistor STD P2F smd code marking C8	PDF
Untitled Abstract: No abstract text available Text: T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •	Original	T2G6003028-FL T2G6003028-FL JESD22-A114 2002/95/EC C15H12Br402) J-STD-020. EAR99	PDF