ATC100B100CT500XT Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
rf35 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S7235N Rev. 0, 6/2012 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7235NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8S7235N MRF8S7235NR3 rf35
NIPPON CAPACITORS Abstract: MRF6S19200H MRF6S19200HSR3 A114 A115 AN1955 C101 JESD22 MRF6S19200HR3 ATC100B100CT500XT Text: Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19200HR3 MRF6S19200HSR3 Designed for CDMA base station applications with frequencies from 1930 to	Original	PDF	MRF6S19200H MRF6S19200HR3 MRF6S19200HSR3 MRF6S19200HR3 NIPPON CAPACITORS MRF6S19200H MRF6S19200HSR3 A114 A115 AN1955 C101 JESD22 ATC100B100CT500XT
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S7235N Rev. 0, 6/2012 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7235NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8S7235N MRF8S7235NR3
0119A Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19200HR3 MRF6S19200HSR3 Designed for CDMA base station applications with frequencies from 1930 to	Original	PDF	MRF6S19200H MRF6S19200HR3 MRF6S19200HSR3 MRF6S19200HR3 0119A