Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ASI10648 Search Results

    ASI10648 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ASI10648 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

    ASI10648 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ASI10648

    Abstract: TVU020
    Text: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is Designed for PACKAGE STYLE .400 BAL FLG A FEATURES: A B FULL R 4X.060 R • Input Matching Network • • Omnigold Metalization System C E P D F H K MAXIMUM RATINGS 11.0 A VCBO 60 V


    Original     		PDF TVU020 TVU020 ASI10648 ASI10648

    TVU020

    Abstract: RF Bipolar Transistor 2108-G ASI10648
    Text: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is a common emitter RF bipolar transistor capable of providing 20 W peak, Class-A, RF power output over 470-860 MHz. It utilizes emitter ballasting & input impedance matching to provide broadband


    Original     		PDF TVU020 TVU020 RF Bipolar Transistor 2108-G ASI10648

    ASI10648

    Abstract: TVU020
    Text: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .400 BAL FLG A A B FULL R FEATURES: 4X.060 R C • Common Emitter • PG = 8.5 dB at 20 W/860 MHz • Omnigold Metalization System


    Original     		PDF TVU020 TVU020 ASI10648