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Advanced Power Technology APT12031JLL POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 1200V, 0.31OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	APT12031JLL		6			1 $32.5 10 $32.5 100 $32.5 1000 $32.5 10000 $32.5	Buy Now

APT12031JLL Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT12031JLL		Advanced Power Technology	POWER MOS 7 1200V 30A 0.310 Ohm		Original	PDF
APT12031JLL		Advanced Power Technology	Low loss, high voltage, N-Channel enhancement mode power MOSFET		Original	PDF

APT12031JLL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
APT12031JLL Abstract: mosfet 600V 30A MOSFET 1200v 30a APT30DF120 Text: APT12031JLL 1200V 30A 0.310Ω POWER MOS 7 R MOSFET Symbol VDSS ID SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel	Original	APT12031JLL OT-227 APT12031JLL mosfet 600V 30A MOSFET 1200v 30a APT30DF120	PDF
APT12031JLL Abstract: No abstract text available Text: APT12031JLL 1200V 30A 0.310W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses	Original	APT12031JLL OT-227 APT12031JLL	PDF
APT12031 Abstract: No abstract text available Text: APT12031JLL 1200V 30A 0.310Ω R POWER MOS 7 MOSFET Symbol VDSS ID SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel	Original	APT12031JLL OT-227 APT12031	PDF
APT12031JLL Abstract: No abstract text available Text: APT12031JLL 1200V 30A 0.310W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses	Original	APT12031JLL OT-227 APT12031JLL	PDF
APT12031JFLL Abstract: APT12031JLL Text: APT12031JFLL 1200V 30A 0.33 Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	APT12031JFLL OT-227 APT12031JFLL APT12031JLL	PDF
Untitled Abstract: No abstract text available Text: APT12031JFLL 1200V 30A 0.33 Ω R POWER MOS 7 FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	APT12031JFLL OT-227	PDF
SP6-P Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original	10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter	PDF
smps 1000W Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain	Original	des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit	PDF
SOT-227 lead frame Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic	Original	MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series	PDF
mj 1504 transistor equivalent Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208 Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as	Original		PDF
APT100GF60LR Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of	Original		PDF
apt12031jfll Abstract: APT12031JLL 1460F Text: APT12031JFLL 1200V 30A 0.310Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	APT12031JFLL OT-227 apt12031jfll APT12031JLL 1460F	PDF