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Microchip Technology Inc APT10086BVFRG MOSFET N-CH 1000V 13A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT10086BVFRG	Tube			30	1 - 10 - 100 $20.48 1000 $20.48 10000 $20.48	Buy Now
Avnet Americas	APT10086BVFRG	Tube		32 Weeks	30	1 $19.1688 10 $19.1688 100 $16.0095 1000 $16.68967 10000 $16.68967	Buy Now
Mouser Electronics	APT10086BVFRG					1 $20.48 10 $20.48 100 $17.69 1000 $17.69 10000 $17.69	Get Quote
Newark	APT10086BVFRG	Bulk			30	1 $20.48 10 $20.48 100 $17.69 1000 $16.63 10000 $16.63	Buy Now
Microchip Technology Inc	APT10086BVFRG	Tube		32 Weeks		1 $20.48 10 $20.48 100 $17.69 1000 $16.23 10000 $15.69	Buy Now

Onlinecomponents.com	APT10086BVFRG					1 $19.56 10 $17.97 100 $16.42 1000 $15.93 10000 $15.93	Buy Now
TME	APT10086BVFRG				1	1 $29.61 10 $23.55 100 $23.55 1000 $23.55 10000 $23.55	Get Quote
NAC	APT10086BVFRG	Tube			18	1 $19 10 $19 100 $17.5 1000 $16.22 10000 $16.22	Buy Now
Master Electronics	APT10086BVFRG					1 $19.56 10 $17.97 100 $16.42 1000 $15.93 10000 $15.93	Buy Now

APT10086BVFR Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT10086BVFR		Advanced Power Technology	N-Channel enhancement mode power MOSFET		Original	PDF
APT10086BVFR		Advanced Power Technology	POWER MOS V 1000V 13A 0.860 Ohm		Original	PDF
APT10086BVFR		Microsemi	Power MOS V FREDFET		Original	PDF
APT10086BVFRG		Microchip Technology	MOSFET N-CH 1000V 13A TO247		Original	PDF

APT10086BVFR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
APT10086BVFR Abstract: No abstract text available Text: APT10086BVFR 1000V POWER MOS V 13A 0.860Ω Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT10086BVFR O-247 O-247 APT10086BVFR	PDF
APT10086BVR Abstract: APT10086BVFR Text: APT10086BVFR 13A 0.860Ω 1000V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT10086BVFR O-247 O-247 APT10086BVR APT10086BVR APT10086BVFR	PDF
APT10086BVFR Abstract: No abstract text available Text: APT10086BVFR 1000V POWER MOS V 13A 0.860Ω Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT10086BVFR O-247 O-247 APT10086BVFR	PDF
4440 amp Abstract: APT10086BVFR APT10086BVR Text: APT10086BVFR 13A 0.860Ω 1000V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT10086BVFR O-247 O-247 APT10086BVR 4440 amp APT10086BVFR APT10086BVR	PDF
Untitled Abstract: No abstract text available Text: APT10086BVFR 1000V POWER MOS V 13A 0.860Ω Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT10086BVFR O-247 O-247	PDF
BD119 Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20	Original	AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR	PDF
catalog mosfet Transistor smd Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance	Original		PDF
APT10026JN Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR	PDF
5017BVR Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60	PDF
sot-227 footprint Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original		PDF
mj 1504 transistor equivalent Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208 Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as	Original		PDF
APT6015LVR Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR	PDF
APT100GF60LR Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of	Original		PDF
Untitled Abstract: No abstract text available Text: APT10086BVFR A DVAN CED P ow er Te c h n o lo g y ' 1000V POWER MOS V 13A 0.860U FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	OCR Scan	APT10086BVFR O-247 APT10086BVFR MIL-STD-750 O-247AD	PDF

max4440 Abstract: No abstract text available Text: APT10086BVFR A dvanced w Tæ p o w e r Te c h n o l o g y iooov i3a 0.8600 POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	APT10086BVFR O-247 APT10086BVR 100V16 max4440	PDF
nt 6600 G Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700	OCR Scan	APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr	PDF
10086B Abstract: No abstract text available Text: • R W .\A ADVANCED A P T 10086B V F R pow er Te c h n o l o g y “ 1000v POWER MOS V i 3a 0.860Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	10086B 1000v O-247 APT10086BVR	PDF