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    Untitled

    Abstract: No abstract text available
    Text: AP1003BST Preliminary Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lead-Free Package BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 4.7m ID G 17.3A S Description The AP1003BST used the latest APEC Power MOSFET silicon


    Original     		PDF AP1003BST AP1003BST 25ion 100us 100ms Fig10.

    AP1003

    Abstract: miller
    Text: AP1003BST Preliminary Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 30V RDS(ON) 4.7mΩ ID G 17.3A S Description The AP1003BST used the latest APEC Power MOSFET silicon


    Original     		PDF AP1003BST AP1003BST 100us 100ms Fig10. AP1003 miller

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP1003BST-3 N-channel Enhancement-mode Power MOSFET Lead Pb -free, Halogen-free D BV DSS Low Conductance Losses RDS(ON) Fast Switching Performance Low Profile (< 0.7mm ) G S ID 30V 4.5mΩ 17.3A Description The AP1003BST-3 uses the latest APEC Power MOSFET silicon


    Original     		PDF AP1003BST-3 AP1003BST-3 AP1003BST-3TR