KX-K
Abstract: video genlock pll 3.3 818 vco MAL 9940 EL4583 EL4583C EL4584 EL4585 EL4585C EL4585CN
Text: EL4585C EL4585C Horizontal Genlock 8 FSC Features General Description 36 MHz general purpose PLL 8 FSC timing Use the EL4584 for 4 FSC Compatible with EL4583C Sync Separator VCXO Xtal or LC tank oscillator k 2nS jitter (VCXO) User-controlled PLL capture and
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EL4585C
EL4584
EL4583C
EL4585C
KX-K
video genlock pll 3.3
818 vco
MAL 9940
EL4583
EL4584
EL4585
EL4585CN
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sic 13.48
Abstract: MC68300 MC68F375 MC68HC16 CTMC sasm Motorola F244 13842 pwm F218
Text: SECTION 13 CONFIGURABLE TIMER MODULE CTM9 13.1 Introduction The configurable timer module (CTM9) is a family of timer modules for the Motorola modular microcontroller family (MMF), including the MC68300 (CPU32) and the MC68HC16 (CPU16) families of microcontrollers (MCUs). The timer architecture is
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MC68300
CPU32)
MC68HC16
CPU16)
16-bit
MC68F375
sic 13.48
MC68300
MC68F375
MC68HC16
CTMC
sasm
Motorola F244
13842 pwm
F218
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MJ8503
Abstract: MJ8502 MJ8504 J8503
Text: MOTOROLA SC 1EE 0 § b3fc.72S4 O O f l i m ? ^ | XSTRS/R F MOTOROLA MJ8502 MJ8503 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r s Data. S h e e t S .0 A M P ER E N P N SILIC O N PO W ER T R A N S IS T O R S SW ITCH M O D E S ER IES NPN S ILICO N POW ER T R A N SIS T O R S
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MJ8502
MJ8503
Time-25Â
YI45M.
T0-204AA
MJ8504
J8503
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photodyne 88xla
Abstract: 88xla MFOE1200 228756-1 photodyne 350 905 motorola photodyne SMA 905 fiber dimensions L036 905-138-5001
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MFOE1200 Fiber Optics; — 100 M H z Family Infrared LEE . d e sig n e d for fiber op tics ap p lication s req u iring h ig h p o w e r and fast r e sp o n se time. • • • • • • HERMETIC FAMILY
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F086600380
MFOE1200
10A-01
88XLA
photodyne 88xla
MFOE1200
228756-1
photodyne 350
905 motorola
photodyne
SMA 905 fiber dimensions
L036
905-138-5001
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MM706
Abstract: 40ZA
Text: MOTOROLA SC XSTRS/R 4bE F D b3b?2S4 OOTMflSfl MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 2 .5 W - 4 7 0 M H Z - 7 .5 V HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR N PN S IL IC O N . . . designed for 5.0 to 10 Volt U H F large-signal amplifier applications
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T-33-05
MM706
40ZA
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AG S53
Abstract: CA2813
Text: MOTOROLA SC XSTRS/R F 15E D | t.3t.?2S4 00flflSE2 4 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA CA2813 CA2813B CA2813H The RF Line W ideband L in e a r A m p lifie rs . . . designed for am plifier applications in 50 to 100 ohm system s requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability
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00flflSE2
CA2813
CA2813B
CA2813H
-32d8
AG S53
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MRF5174
Abstract: IR 21025
Text: 4bE D M O T O R O L A SC X S T R S / R F b3b?2S4 OOISQM? 5 IMOTfe MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 2 W —400 MHz 2 RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 260*600 MHz frequency range.
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28-Volt.
400-MHz
MRF5174
IR 21025
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MRF5175 transistor
Abstract: MRF5175 transistor 2sc 546
Text: MOT OR OL A SC CXSTRS/R F 4bE D • MOTOROLA b3b?2SM GOLOSO T -3 3 -0 5 ■ SEMICONDUCTOR TECHNICAL DATA MRF5175 T h e R F L in e 5 W - 400 MHi R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver
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MRF5175
28-Volt,
400-M
T-33-05
MRF5175 transistor
MRF5175
transistor 2sc 546
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h11q
Abstract: H11Q2 H11U
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE UL CSA <D ® ® 8ET1 H11G1* H11G2* H11G3 8 EMKO DEMKO NEMKO [CTR • 1000% Min] GlobalOptdsolfttor 6 -Pin DIP Optoisolators Darlington Output On-Chip Resistors The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs
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H11G1,
H11G2
H11G3
H11G1*
H11G2*
H11G3
H11G1
H11G1
H11Gx
h11q
H11Q2
H11U
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sem 2106
Abstract: bux13
Text: I MOTORGLA SC X S T R S /R 12E D F I k 3 b7 2 S4 0 0 0 4 =52*1 3 | MOTOROLA SEM ICO N DUCTO R BUX13 TECHNICAL DATA 15 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.
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BUX13
AN415A)
sem 2106
bux13
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bfl 177
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F bSE » • b3b72S4 DG^fl404 flflb ■ MOTOROLA ■ SE M IC O N D U C T O R TECHNICAL DATA P o w e r Field E ffe c t T ra n sisto r IRF130 N-Channel Enhancement-Mode Silicon Gate This T M O S Power FET is designed for low voltage, high speed power switching applications
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b3b72S4
fl404
IRF130
O-204AA)
97A-01
97A-03
97A-03
O-204AE)
bfl 177
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transistor 335
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 25 W P E P - 3 0 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTORS .d esigne d primarily for applications as a high-power linear amplifier from 2.0 to 75 MHz. • Specified 28 Volt. 30 M H z Characteristics —
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MRF401
transistor 335
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74HC30
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC30 8-In p u t N A N D Gate J SUFFIX CERAMIC CASE 632-08 High-Performance Silicon-Gate CMOS The M C 5 4 /7 4 H C 3 0 is identical in pinout to the LS30. The device inputs are com patible w ith standard C M O S outputs; with pullup resistors, they are com patible with
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MC54/74HC30
751A10
74HC30
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MJ12010
Abstract: MR91S
Text: MOTOROLA SC XSTRS/R F 15 E 0 | t>3b72SM 00 05 1 0 3 2 | # MOTOROLA • SEMICONDUCTOR MJ12010 TECHNICAL DATA 10 A M P E R E HORIZONTAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTOR . specifically designed for use in C R T deflection circuits. • Collector-Emitter Voltage — V c E X “ 950 Volts
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3b72SM
MJ12010
11II1
MJ12010
MR91S
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transistor j411
Abstract: MJ411 J410 mj411 transistor
Text: MOTOROLA SC XSTRS/R F H E D | b3b73S>. D O i l - lb ? 0 | / -/ J V J MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O L T A G E NPN SILICON T R AN SISTO R S 5 AM PERE . . . designed for medium to high voltage inverters, converters, regulators and switching circuits.
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b3b73S>
transistor j411
MJ411
J410
mj411 transistor
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LS20 MOTOROLA
Abstract: No abstract text available
Text: MOTOROLA SC LOGIC MOTOROLA biE D • b3b?ES5 □□‘iibaa T3E ■ notm m SEMICONDUCTOR TECHNICAL DATA MC54/74HC20 Dual 4-In p u t N A N D Gate High-Performance Silicon-Gate CMOS J SUFFIX CERAMIC CASE 632-08 The MC54/74HC20 is identical in pinout to the LS20. The device inputs are com
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MC54/74HC20
LS20 MOTOROLA
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line 5 W - 400 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal driver and predriver am plifier stages in the 2 0 0 -6 0 0 M H z frequency range.
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MRF5175
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M9409
Abstract: transistor 342 G motorola 2N5643
Text: MOTOROLA SC XST RS/ R F 4bE D L3 b 7 2 S4 OGIMÜTE 2 MOTOROLA . ' P - 3 3 " 11 • S E M IC O N D U C T O R TECHNICAL DATA 2N5643 The RF Line 40 W - 175 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR designed p rim a rily fo r w id e b a n d large-signal a m p lifie r stages in
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2N5643
M9409
transistor 342 G
motorola 2N5643
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2N5849 motorola
Abstract: 2N5849 K1245 vk200 rfc with 6 turns ti211 TRANSISTOR motorola 838 RNW transistor
Text: MOTOROLA SC XSTRS/R F 4bE D L3fci7254 OCHMlOl MOTOROLA T • MOTb 7^33-¿3 ■ SEM ICONDUCTOR ■ TECHNICAL DATA 2N5849 T h e R F L in e 40 W-50 MHz RF POWER T R A N SIST O R NPN SIL IC O N NPN SILIC O N RF POWER T R A N SIST O R designed p rim a rily for use in large signal am plifie r o u t p u t stages,
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L3fci7254
2N5849
2N5849
DQR410M
2N5849 motorola
K1245
vk200 rfc with 6 turns
ti211
TRANSISTOR motorola 838
RNW transistor
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MOTOROLA MJ4035
Abstract: MJ4032 MJ4030 MOTOROLA MJ4035 MJ4032 MOTOROLA TRANSISTOR BC 187 MJ4033 nd 043 transistor J4031 MJ4030
Text: MOTOROLA SC Í X S T R S / R F> 6367254 MOTOROLA SC Tb CXSTRS/R F D eT | t.3L.72SM OOfiGTDO 3 f 96D 8 0 9 0 0 — - r T - J 3 - J 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN MJ4030 MJ4031 MJ4032 MJ4033 MJ4034 MJ4035 16 AMPERE MEDIUM-POWER C O M PLEM EN TA RY
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MJ4030
J4031
MJ4032
MJ4033
MJ4034
MJ4035
MJ4033
MJ4031
MOTOROLA MJ4035
MJ4032
MJ4030 MOTOROLA
MJ4035
MJ4032 MOTOROLA
TRANSISTOR BC 187
nd 043 transistor
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MC145151
Abstract: MC145151FN2 MC145151P2 MC145151-1 MC145151-2 pll divide by 256 prescalers MC145151-2 mc145151p phase detector 12,8 mhz crystal oscillator
Text: MOTOROLA • S E M IC O N D U C T O R TECHN ICA L DATA M C I 45151 -2 P a ra lle l-In p u t PLL Frequency S yn th esizer In te rfa c e s w ith S in g le -M o d u lu s Prescalers 28 The MC145151-2 is programmed by 14 parallel input-data lines for the N counter and
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MC145151-2
14-bit
MC145151-1.
MC145151
MC145151FN2
MC145151P2
MC145151-1
MC145151-2 pll
divide by 256 prescalers
mc145151p
phase detector
12,8 mhz crystal oscillator
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SE M IC O N D U C TO R TECHNICAL DATA MC54/74HC20 Dual 4-In p u t N A N D Gate H igh -P erfo rm ance S ilicon-G ate C M O S T h e M C 5 4 /7 4 H C 2 0 is id e n tic a l in p in o u t to th e LS20, T h e device in p u ts are c o m p a tib le w ith standard C M O S o u tp u ts ; w ith p u llu p resistors, th e y are c o m p a tib le w ith
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MC54/74HC20
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MTD7N20
Abstract: jw 521
Text: MOTOROLA SC XSTRS/R F EbE D b3b?5S4 GQIGISO 2 Order this data sheet by MTD7N20/D MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA Designer's Data Sheet MTD7N20 P o w e r Field E ffe c t T ra n sisto r N -C h a n n e l E n h a n c e m e n t-M o d e S ilic o n G a te T M O S
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MTD7N20/D
TD7N20
MTD7N20
jw 521
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Tip 26C transistor
Abstract: transistor CQ 548 npn CQ 548 Transistor npn motorola MRF427 5 watt resistor arco 469 trimmer capacitor CQ340 TRIMMER capacitor 469 1854 0003 1N4997
Text: 15E MOTOROLA I b3ki7254 M O TO RO LA SC QGà?bM3 □ | XSTRS/R SEM ICO NDUCTOR F T - 33-13 ' MRF427 MRF427A TECHNICAL DATA The RF Line 25 W PE P - 3 0 MHz R F POWER T RAN SISTO R NPN SILICON R F POWER TR AN SISTO R NPN SILICON . . . designed prim arily fo r high-voltage applications as a high-power
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b3ki7254
MRF427
MRF427A
Tip 26C transistor
transistor CQ 548 npn
CQ 548 Transistor npn motorola
5 watt resistor
arco 469 trimmer capacitor
CQ340
TRIMMER capacitor 469
1854 0003
1N4997
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