mosfet j122
Abstract: AGR09085EF J118 MOSFET j122 mosfet AGR09085E AGR09085EU JESD22-C101A RM73B2B120J
Text: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
AGR09085E
del00
AGR09085EU
AGR09085EF
mosfet j122
AGR09085EF
J118 MOSFET
j122 mosfet
AGR09085EU
JESD22-C101A
RM73B2B120J
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mosfet j122
Abstract: J118 MOSFET j122 mosfet ALT500
Text: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09085E
Hz--895
iGR09085EF
DS04-055RFPP
DS04-028RFPP)
mosfet j122
J118 MOSFET
j122 mosfet
ALT500
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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PDF
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AGR09085E
Hz--895
delivering10-12,
DS04-055RFPP
DS04-028RFPP)
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Untitled
Abstract: No abstract text available
Text: DRAFT COPY ONLY Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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Original
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PDF
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AGR09085E
Hz--895
ca1212
DS04-028RFPP
DS03-057RFPP)
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z921
Abstract: No abstract text available
Text: DRAFT COPY ONLY Preliminary Data Sheet September 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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Original
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PDF
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AGR09085E
Hz--895
c2000,
DS03-057RFPP
DS01-209RFPP)
z921
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AGR09085EF
Abstract: AGR09085E AGR09085EU JESD22-C101A j122 mosfet
Text: Preliminary Data Sheet April 2004 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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Original
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PDF
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AGR09085E
Hz--895
AGR09085E
DS04-152RFPP
DS04-055RFPP)
AGR09085EF
AGR09085EU
JESD22-C101A
j122 mosfet
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JESD22-C101A
Abstract: AGR09085E AGR09085EF AGR09085EU ne 22 mosfet
Text: Preliminary Data Sheet May 2004 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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Original
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PDF
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AGR09085E
Hz--895
AGR09085E
DS04-199RFPP
DS04-152RFPP)
JESD22-C101A
AGR09085EF
AGR09085EU
ne 22 mosfet
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GM71C4
Abstract: T88L
Text: @ LG Semicon. Co. LTD. Description Features The GM71C4800A/AL is the new generation dynamic RAM organized 524,288 x 8 bit. GM71C4800A/AL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The
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GM71C4800A/AL
GM71C4
T88L
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gm71g4100
Abstract: No abstract text available
Text: GM71C4100A/AL ES3GOLDSTAR GoldStar ELECTRON CO., LTD. 4,194,304 WORDS x 1 BIT CMOS DYNAMIC RAM Description Features The GM71C4100A/AL is the new generation dy nam ic RAM organized 4 ,1 9 4 ,3 0 4 x 1 Bit. GM71C4100A/AL has realized higher density, higher performance and various functions by uti
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GM71C4100A/AL
GM71C4100A/AL
300-mil
20-pin
400-mil
300-mil
gm71g4100
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s417t
Abstract: ALT70 ALZ-70 88882 ALZ10 CG1700
Text: GM71C4170A/AL GM71CS4170A/AL LG Semicon Co.,Ltd. 262,144 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71C4170 AML is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4170A/AL has realized higher density, higher performance and various functions by utilizing
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GM71C4170A/AL
GM71CS4170A/AL
GM71C4170
GM71CS4170A/AL
s417t
ALT70
ALZ-70
88882
ALZ10
CG1700
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GM76C88AL FW
Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20
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GM71C1000B/BJ/BZ-60
GM71C1000B/BJ/BZ-70
GM71C1Q0
B/BJ/BZ-80
GM71C1000BL/BLJ/BLZ-60
GM71C1OOOBL/BLJ/BLZ-
GM71C1000BL/BIJ/BLZ-80
200uA)
512cydes/8ms
18DIP
GM76C88AL FW
71C4260
GM71G
GM76C28A
GM23C32000
LR-80
CLR-80
HR80
Tlr8
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A5 GNC
Abstract: ALZ10
Text: @ LG Semicon. Co. LTD Description Features The GM71C4270A/AL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4270A/AL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The
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GM71C4270A/AL
402A757
00DS3fl7
A5 GNC
ALZ10
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gm71c4260aj
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD._ Description Features The GM71C4260A/AL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4260A/AL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.
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GM71C4260A/AL
DD05327
4DE6757
0DQ532fl
gm71c4260aj
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gm71c4400az
Abstract: No abstract text available
Text: T sg r GM71C4400A/AL G oldStar 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4400A/AL is the new generation dy nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. GM71C4400A/AL has realized higher density, higher performance and various functions by uti
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GM71C4400A/AL
GM71C4400A/AL
300-mil
20-pin
400-mil
300-mil
gm71c4400az
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gm71c4270a
Abstract: No abstract text available
Text: GM71C4270A/AL GM71CS4270A/AL LG Semicon Co.,Ltd. 262,144 W ORDS x 16 BIT CMOS DYNAM IC RAM Description Features The GM 71C4270A/AI. is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4270A/AL has realized higher density, higher performance and various functions by utilizing
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GM71C4270A/AL
GM71CS4270A/AL
71C4270A/AI.
71C4270A/AL
GM71CS4270A/AL
gm71c4270a
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GM76C256all
Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60
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GM71C1000B/BJ/BZ-60
GM71C10008/BJ/BZ-70
GM71C
GM71C10006UBLJ/BLZ-60
GM71C10006UBLJ/BLZ-70
GM71C10006UBLJ/BLZ-80
351MxB
GM23C8000A/AF
32DIP
32SOP
GM76C256all
16M-DRAM
LT-860
GM23C400
GM76C28A
GM23C810QA-12
LR-80
BFW12
GM23C8001
GM23C410
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GM71C4170
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GM71C4170A/AL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4170A/AL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.
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GM71C4170A/AL
000520b
GM71C4170
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Untitled
Abstract: No abstract text available
Text: GM71C4170A/AL GM71CS4170A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 262,144 WORDS X16BIT CMOS DYNAMIC RAM D escrip tio n F ea tu res The GM71C4170A/AL is the new generation dynamic RAM organized 262,144x16 Bit. GM71C4170A/AL has realized higher density, higher performance and various functions by
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GM71C4170A/AL
GM71CS4170A/AL
X16BIT
GM71C4170A/AL
144x16
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auo 014
Abstract: No abstract text available
Text: GM71C4260A/AL GM71CS4260A/AL GoldStar 262,144 WORDS X16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4260A/AL is th e new generation d y n am ic RAM organized 2 6 2 ,1 4 4 x 1 6 Bit. GM71C4260A/AL has realized higher density,
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GM71C4260A/AL
GM71CS4260A/AL
X16BIT
GM71C4260A/AL
71C4260A/AL
71CS4260A/AL
auo 014
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GM7IC4100
Abstract: No abstract text available
Text: GM71C4100A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 4,194,304 WORDS x l BIT CMOS DYNAMIC RAM Description Features The GM71C4100A/AL is the new generation dy nam ic RAM organized 4,1 9 4 ,3 0 4 x 1 Bit. GM71C4100A/AL has realized higher density, higher performance and various functions by uti
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GM71C4100A/AL
GM71C4100A/AL
300-mil
20-pin
400-mil
300-mil
GM7IC4100
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GM7IC
Abstract: No abstract text available
Text: GM71C4400A/AL P2J G o l d S t a r iBBA GOLDSTAR ELECTRON CO., LTD. 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. GM71C4400A/AL has realized higher density
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GM71C4400A/AL
GM71C4400A/AL
300-mil
20-pin
400-mil
300-mil
GM7IC
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Untitled
Abstract: No abstract text available
Text: W GM71C4270A/AL GM71CS4270A/AL GoldStar ! 262,144 WORDS x 16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4270A/AL is the new generation dynamic RAM organized 262,144x 16 Bit. GM71C4270A/AL has realized higher density, higher performance and various functions by
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GM71C4270A/AL
GM71CS4270A/AL
16BIT
GM71C4270A/AL
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tl 0741
Abstract: No abstract text available
Text: GM71C4800A/AL GM71CS4800A/AL LG S em icon Co.,Ltd. 524,288 W ORDS x 8 BIT CMOS DYNAM IC RAM Description Features The G M 71C4800A/AL is the new generation dynamic RAM organized 524,288 x 8 bit. GM71C4800A/AL has realized higher density, higher performance and various functions by utilizing
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GM71C4800A/AL
GM71CS4800A/AL
71C4800A/AL
GM71CS4800A/AL
tl 0741
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GM71C4400BJ70
Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
Text: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80
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71C1000B-70
1OOOBJ-70
71C1000BZ-70
71C1000B-80
1OOOBJ-80
71C1000BZ-80
71C1000BL-80
1000B
I000H
GM71C1000B-60
GM71C4400BJ70
GM71C4400BLT70
GM71C4100CJ60
GM76C256BLL-70
GM76C8128ALLFW70
GM71C4100CJ70
1gm7
GM76C256BLL70
GMM7362000BSG-70
76C256
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