ALQQ Search Results

ALQQ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ALQQ Abstract: 369A-13 AN569 MTD15N06VL SG59 J50 mosfet Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MTD15N06VUD DATA E DesignerkTMData Sheet — TMOS VTM Power Field Effect Wansistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETS. This	Original	PDF	MTD15N06VUD 602-2W609 ALQQ 369A-13 AN569 MTD15N06VL SG59 J50 mosfet
AHCT257 Abstract: SN54AHCT257 SN74AHCT257 Text: SN54AHCT257, SN74AHCT257 QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS WITH 3-STATE OUTPUTS SCLS351 D - MAY 1996 - REVISED JU LY 1998 Inputs Are TTL-Voltage Compatible • EPIC Enhanced-Performance Implanted CMOS Process • Package Options Include Plastic	OCR Scan	PDF	SN54AHCT257, SN74AHCT257 SCLS351 AHCT257 SN54AHCT257 SN74AHCT257
74S129 Abstract: b1664 54ACT573 Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPR O VED ) R EV SH EET R EV SH EET R EV STATUS O F SH EETS REV 1 SH EET PM IC N/A J THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE A M S C N/A a m 3 4 5 6 7 8 9 10	OCR Scan	PDF	74S-129/60V11 5962-E1258 6640lRX 54ACf673bl* CT573F/3A 596e-B766401SX Act573FMQ6 5962-8t6640l2X 54ACTI573LM5B 74S129 b1664 54ACT573
Untitled Abstract: No abstract text available Text: fax id: 7008 CY74FCT16244T/2244T CY74FCT16444T/2H244T p r XoX : V «*1 16 Bit Buffers/Line Drivers CY74FCT162H244T Features: Features • Low power, pin-compatible replacem ent for ABT functions • FCT-E speed at 3.2 ns • Power-off disable outputs permits live insertion	OCR Scan	PDF	CY74FCT16244T/2244T CY74FCT16444T/2H244T 25-mil CY74FCT16244T CY74FCT162244T
54t1 Abstract: No abstract text available Text: fax id: 7020 p yXpX : v « *1 CY74FCT257T - Quad 2-Input Muliplexer Features Functional Description • Function, pinout, and drive com patible with FCT and F logic • FCT-C speed at 4.3 ns max. FCT-A speed at 5.0 ns max. • Reduced V0H typically = 3.3V versions of equivalent	OCR Scan	PDF	CY74FCT257T FCT257T FCT257T. 54t1
ALQQ Abstract: pj4d Text: HY51V17400A Series •H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V17400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY51V17400A 1AD35-00-MAY95 HY51V17400AJ HY51V17400ASLJ HY51V17400AT HY51V17400ASLT ALQQ pj4d