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    AFR, TRANSISTOR Search Results

    AFR, TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    AFR, TRANSISTOR Price and Stock

    Microchip Technology Inc 2N1613A

    Bipolar Transistors - BJT NPN Transistor
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    Onlinecomponents.com 2N1613A
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    Microchip Technology Inc 2N3442

    Bipolar Transistors - BJT NPN Transistor
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    Onlinecomponents.com 2N3442
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    • 100 $35.24
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    Microchip Technology Inc JANS2N2920U

    Bipolar Transistors - BJT NPN Dual Transistors
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    Onlinecomponents.com JANS2N2920U
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    • 100 $140.16
    • 1000 $140.16
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    Microchip Technology Inc 2N3584

    Transistor GP BJT NPN 250V 2A 2-Pin TO-66 Tray
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    Onlinecomponents.com 2N3584
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    • 100 $33.37
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    Microchip Technology Inc JANTX2N5153

    Bipolar (BJT) Transistor PNP 80V 2A 1W Through Hole TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com JANTX2N5153
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    • 10 $12.7
    • 100 $10.77
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    Find more AFR, TRANSISTOR price and stock on Findchips.com

    AFR, TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781K*LT1 3 COLLECTOR 1 3 BASE 2 EMITTER 1 2 SOT– 23 FAbsolute maximum ratings Ta = 25_C FDEVICE MARKING L2SD1781KRLT1=AFR L2SD1781KQLT1=AFQ FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE


    Original     		PDF L2SD1781K L2SD1781KRLT1 L2SD1781KQLT1 L2SD1781K-1/4 L2SD1781K-2/4 L2SD1781K-3/4 OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1


    Original     		PDF L2SD1781KXLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT1G L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G


    Original     		PDF L2SD1781KQLT1G L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G

    transistor AFR

    Abstract: AFR, TRANSISTOR marking AFQ AFR MARKING SOT-23 marking 1039 AFR marking L2SD1781KRLT1G transistor 1039 L2SD1781KQLT1 L2SD1781KQLT1G
    Text: LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor 32V, 0.8A L2SD1781K*LT1 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K*LT1 4) Pb Free Package is Available.


    Original     		PDF L2SD1781K 500mA L2SB1197K OT-23 /TO-236AB L2SD1781KQLT1 L2SD1781KQLT1G L2SD1781KRLT1 L2SD1781KRLT1G transistor AFR AFR, TRANSISTOR marking AFQ AFR MARKING SOT-23 marking 1039 AFR marking transistor 1039 L2SD1781KQLT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G


    Original     		PDF L2SD1781KQLT1G L2SD1781KQLT1G S-L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB AEC-Q101 81KQLT1G

    0440

    Abstract: L2SD1781KQLT1G L2SD1781KRLT1G marking AFR AFR marking transistor afr
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G


    Original     		PDF L2SD1781KQLT1G L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G 0440 L2SD1781KRLT1G marking AFR AFR marking transistor afr

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G


    Original     		PDF L2SD1781KQLT1G L2SD1781KQLT1G S-L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB AEC-Q101 81KQLT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1


    Original     		PDF L2SD1781KXLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT1G L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G

    Untitled

    Abstract: No abstract text available
    Text: &5* 435 3%-)#/.$5#4/2 #/.42/,%2 -!.5!, #-  % &-# , &!-),9 -)#2/#/.42/,%23 -"! 3%2)%3 !2$7!2% -!.5!, /RDERING .UMBER 4- ! 4ABLE OF #ONTENTS  '%.%2!,  &EATURES                                                            


    Original     		PDF

    2N326

    Abstract: afr 05 NPN Germanium
    Text: MI L.s-19500/40 AMENDMENT 1 14 June 1988 I MILITARY SEMICONDUCTOR SPECIFICATION OEVICE, TRANSISTOR, PO’JER TYPE 2N326 NPN GERMANIuM, This amendment forms a part of MI L.s-19500/40B dated 26 February 1968, and is approved for use by all Departments and Agencies


    Original     		PDF s-19500/40 2N326 s-19500/40B 2N326 afr 05 NPN Germanium

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SD1781K TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) Collector current A 0. 35 0.8 1. 60¡ À0. 05


    Original     		PDF OT-23-3L OT-23-3L 2SD1781K 100mA 500mA, 100MHz

    marking AFR

    Abstract: No abstract text available
    Text: 2SD1781K SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features — — 2.80 1.60 Low voltage High saturation current capability 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SD1781K OT-23-3L OT-23-3L 100mA 500mA 100MHz marking AFR

    Untitled

    Abstract: No abstract text available
    Text: LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor 32V, 0.8A L2SD1781K*LT1 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K*LT1 FStructure Epitaxial planar type


    Original     		PDF L2SD1781K 500mA L2SB1197K OT-23 /TO-236AB L2SD1781KQLT1 L2S1781KRLT1

    2SD1781K

    Abstract: transistor afr Transistor marking 0.5
    Text: 2SD1781K SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY TRANSISTOR * Feature: NPN EPITAXIAL SILICON TRANSISTOR Shandong Yiguang Electronic Joint stock Co., Ltd Package:SOT-23 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) (2) High current capacity in compact package


    Original     		PDF 2SD1781K OT-23 500mA/50mA) 2SB1197K 100mA 500mA -50mA 100MHZ 062in 300uS 2SD1781K transistor afr Transistor marking 0.5

    2SD1781K

    Abstract: afr 05 transistor afr
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD1781K SOT-23-3L TRANSISTOR NPN FEATURES z Low voltage z High saturation current capability 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23-3L 2SD1781K OT-23-3L 100mA 500mA 100MHz 2SD1781K afr 05 transistor afr

    transistor afr

    Abstract: AFR marking 2SD1781K afr 05 transistor afr 60
    Text: 2SD1781K SOT-23-3L 2SD1781K TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) Collector current A 0. 35 0.8 1. 60¡ À0. 05 1. 9 ICM℃ 2. 80¡ À0. 05 2. 92¡ À0. 05 200 0. 95¡ À0. 025 PCM: Collector-base voltage


    Original     		PDF 2SD1781K OT-23-3L 100mA 500mA, 100MHz transistor afr AFR marking 2SD1781K afr 05 transistor afr 60

    Untitled

    Abstract: No abstract text available
    Text: 2SD1781K NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 Features: *Very Low VCE(sat) V CE(sat) < 0.4 V (Typ.) (I C / IB = 500mA / 50mA) *High Current Capacity in Compact Package. *Complements The 2SB1197 *We Declare That The Material of Product Compliance With RoHS Requirements.


    Original     		PDF 2SD1781K OT-23 500mA 2SB1197 -50mA, 100MHz 14-Nov-2012

    2SD1781

    Abstract: 2sd1781r transistor afr 2SB1197 2SD1781-Q
    Text: 2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Very low VCE sat .VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA)  Complements to 2SB1197


    Original     		PDF 2SD1781 OT-23 500mA 2SB1197 2SD1781-Q 2SD1781-R 100mA, 500mA, 100MHz 2SD1781 2sd1781r transistor afr 2SB1197 2SD1781-Q

    marking AFQ

    Abstract: 2SB1197K 2SD1781K transistor afr
    Text: 2SD1781K NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L Very low VCE sat .VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA) Complements to 2SB1197K


    Original     		PDF 2SD1781K OT-23 500mA 2SB1197K 100mA, 500mA, 100MHz 01-June-2002 marking AFQ 2SB1197K 2SD1781K transistor afr

    NB b6 smd transistor

    Abstract: smd diode S6 6D Diode smd f6 SMD TRANSISTOR MARKING by 9f smd diode JC 9E SMD TRANSISTOR MARKING 9f TRANSISTOR SMD MARKING CODE B7 transistor afr 22 TRANSISTOR SMD MARKING CODE 1d TRANSISTOR SMD MARKING CODE 2.T
    Text: ICs for Consumer Electronics 8-Bit Microcontroller, ROMLESS SDA 30C263 / SDA 30C264 Data Sheet 1996-06-01 SDA 30C263 / SDA 30C264 Revision History: Current Version: 1996-06-01 Previous Version: Page Page in previous (in new Version Version) Subjects (major changes since last revision)


    Original     		PDF 30C263 30C264 NB b6 smd transistor smd diode S6 6D Diode smd f6 SMD TRANSISTOR MARKING by 9f smd diode JC 9E SMD TRANSISTOR MARKING 9f TRANSISTOR SMD MARKING CODE B7 transistor afr 22 TRANSISTOR SMD MARKING CODE 1d TRANSISTOR SMD MARKING CODE 2.T

    transistor smd afr 22

    Abstract: siemens sda 30c164 transistor smd bc rn TRANSISTOR SMD MARKING CODE B7 30C163 SMD Transistor AFR Siemens sda 5250 c4 marking code CB SMD ic a18 NB b6 smd transistor TRANSISTOR BC 187
    Text: SIEM ENS ICs for Consumer Electronics 8-Bit Microcontroller, ROMLESS SDA 30C263 / SDA 30C264 Datasheet 1996-06-01 SDA 30C263 / SDA 30C264 Revision History: Current Version: 1996-06-01 Previous Version: Page in previous Version Page (in new Version) Subjects (major changes since last revision)


    OCR Scan     		PDF 30C263 30C264 30C264 transistor smd afr 22 siemens sda 30c164 transistor smd bc rn TRANSISTOR SMD MARKING CODE B7 30C163 SMD Transistor AFR Siemens sda 5250 c4 marking code CB SMD ic a18 NB b6 smd transistor TRANSISTOR BC 187

    Untitled

    Abstract: No abstract text available
    Text: h 7 > y X $ / T ransistors 2SD 1781K 2SD1781K X tf £ * > T V 7° L - ;u K = NPN ' > u p > h 7 > y X $ 4 ,H 2]*rilll«ffl/Mediiim Power Amp. Epitaxial Planar Super Mini-Mold NPN Silicon Transistor • £tff2\fi£|3]/D im ensions U n it: mm) 1) V c E l s a t l t f ' ^ t C - f i l ' c


    OCR Scan     		PDF 1781K 2SD1781K Ul/72

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ö23b32ü 0017251 3 ■ SIP NPN Silicon Transistors SMBT 6428 SMBT 6429 17 SIEMENS/ SPCL-. SEMICONDS • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering code for


    OCR Scan     		PDF 23b32Ã QQ17Eb3

    STA451C

    Abstract: STA441C SL 100 NPN Transistor base emitter collector STA341M all transistor STA342M STA431A sanken sta341m sta400a transistor afr
    Text: E LECTi!I5 c.° LT1> 35E m P 7^0741 000074^ 5 EESAKJ T 4 3 - Z 5 STA431A/STA451C/STA453C NPN Silicon Triple-Diffused Mesa Type Transistor E/G PNP Silicon Epitaxial Planar Type Features ^Equivalent Circuits • •C om plem entary Pair Low Saturation Voltage


    OCR Scan     		PDF STA431A/STA451C/STA453C STA431A, STA453C) STA400C STA340M STA400A STA441C STA451C STA453C SL 100 NPN Transistor base emitter collector STA341M all transistor STA342M STA431A sanken sta341m transistor afr