PAN 3504
Abstract: 8LST ASN-E0052 ASN-E0053R as3582 souriau 8522-1.001 MS90376-12 MS9037612 8522-1-002 NSA 937 901
Text: 8ST Series Description Applications • A high density connector from 1 to 128 contacts • Sizes 22D, 20, 16, 12, # 16 coax and # 8 triax • Bayonet locking system • MIL-C 38999 Series I contact layouts • 100% scoop proof • EMI/RFI shielding and shell-to-shell
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Bosch 8.0 abs diagram
Abstract: LAH 25-NP bosch esp on-off valve AN2791 bosch st valve driver bosch st valve bosch abs control unit Bosch ESP diagram 1N5817
Text: AN2791 Application note L9352B coil driver for ABS/ESP applications: current regulated channel analysis Introduction This document describes a detailed analysis on the current regulated channels of the ST coil driver L9352B. This intelligent quad-low side switch is typically used to drive inductive
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AN2791
L9352B
L9352B.
Bosch 8.0 abs diagram
LAH 25-NP
bosch esp
on-off valve
AN2791
bosch st valve driver
bosch st valve
bosch abs control unit
Bosch ESP diagram
1N5817
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CRIMP TOOL 8526-1344
Abstract: as3582 ASN-E0052 SN 1004 souriau 8522-1.001 M22520 8526-1344 VG96912 8599-0721 8522-2-001 8522-2142* SOURIAU
Text: 8ST Series Description Applications • A high density connector from 1 to 128 contacts • Sizes 22D, 20, 16, 12, # 16 coax and # 8 triax • Bayonet locking system • MIL-C 38999 Series I contact layouts • 100% scoop proof • EMI/RFI shielding and shell-to-shell
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SN1097-16-
SN1097-18-
SN1097-20-
SN1097-22-
SN1097-24-
SN1097-11
SN1097-13
SN1097-15
SN1097-17
SN1097-19
CRIMP TOOL 8526-1344
as3582
ASN-E0052
SN 1004
souriau 8522-1.001
M22520 8526-1344
VG96912
8599-0721
8522-2-001
8522-2142* SOURIAU
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Untitled
Abstract: No abstract text available
Text: Port Powered TTL/RS-232 Converters 232TTL, 232OTTL PRODUCT FEATURES • • • • Models 232TTL and 232OTTL convert RS-232 signals to 0-5 VDC TTL levels. The 232OTTL provides 1500V optical isolation. Two channels are used to convert from RS-232 to TTL signals and two channels are used to
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TTL/RS-232
232TTL,
232OTTL
232TTL
232OTTL
RS-232
RS-232.
DB25P
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 1GB DDR2 SDRAM SO-DIMM EBE11UD8AJUA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization 128M words × 64 bits, 2 ranks • Mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 200-pin socket type small outline dual in
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EBE11UD8AJUA
200-pin
800Mbps/667Mbps
cycles/64ms
M01E0706
E1083E20
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E1055E30
Abstract: EBE11UD8AJWA-8G-E DDR2-667 DDR2-800 EDE5108AJBG-6E-E EDE5108AJBG-8E-E
Text: DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM EBE11UD8AJWA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization 128M words × 64 bits, 2 ranks • Mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBE11UD8AJWA
240-pin
800Mbps/667Mbps
cycles/64ms
M01E0706
E1055E30
E1055E30
EBE11UD8AJWA-8G-E
DDR2-667
DDR2-800
EDE5108AJBG-6E-E
EDE5108AJBG-8E-E
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m391
Abstract: No abstract text available
Text: UDIMM DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 1Gb D-die 64/72-bit Non-ECC/ECC 60FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin
64/72-bit
60FBGA
K4T1G084QD
128Mbx8
256Mx64/x72
M378T5663DZ3/M391T5663DZ3
m391
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DDR2-667
Abstract: DDR2-800 EDE5108AJBG-8E-E EBE11UD8AJUA-6E-E SSTL-18
Text: PRELIMINARY DATA SHEET 1GB DDR2 SDRAM SO-DIMM EBE11UD8AJUA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization ⎯ 128M words × 64 bits, 2 ranks • Mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 200-pin socket type small outline dual in
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EBE11UD8AJUA
200-pin
800Mbps/667Mbps
M01E0107
E1083E10
DDR2-667
DDR2-800
EDE5108AJBG-8E-E
EBE11UD8AJUA-6E-E
SSTL-18
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EDE5116AJBG-8E-E
Abstract: EDE5116AJBG-6E-E DDR2 sodimm pcb layout EDE5116AJBG
Text: PRELIMINARY DATA SHEET 512MB DDR2 SDRAM SO-DIMM EBE52UD6AJUA 64M words x 64 bits, 2 Ranks Specifications Features • Density: 512MB • Organization ⎯ 64M words × 64 bits, 2 ranks • Mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 200-pin socket type small outline dual in
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512MB
EBE52UD6AJUA
512MB
200-pin
800Mbps/667Mbps
cycles/64ms
M01E0107
E1084E10
EDE5116AJBG-8E-E
EDE5116AJBG-6E-E
DDR2 sodimm pcb layout
EDE5116AJBG
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM EBE11UD8AJWA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization ⎯ 128M words × 64 bits, 2 ranks • Mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBE11UD8AJWA
240-pin
800Mbps/667Mbps
cycles/64ms
M01E0107
E1055E10
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DDR2 DIMM 240 pin names
Abstract: EBE11UD8AJWA-8G-E EDE5108AJBG-8E-E DDR2-667 DDR2-800 EDE5108AJBG-6E-E NC102 EDE5116AJBG
Text: PRELIMINARY DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM EBE11UD8AJWA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization 128M words × 64 bits, 2 ranks • Mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBE11UD8AJWA
240-pin
800Mbps/667Mbps
cycles/64ms
M01E0107
E1055E20
DDR2 DIMM 240 pin names
EBE11UD8AJWA-8G-E
EDE5108AJBG-8E-E
DDR2-667
DDR2-800
EDE5108AJBG-6E-E
NC102
EDE5116AJBG
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M378T2953EZ3
Abstract: M391T2953EZ3 M378T2953EZ3-Ce7 M391T6553EZ3 DDR2-533 DDR2-667 DDR2-800 M391T M391
Text: UDIMM DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb E-die 64/72-bit Non-ECC/ECC 60FBGA & 84FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin
512Mb
64/72-bit
60FBGA
84FBGA
K4T51083QE
32Mbx16
32Mx64
M378T3354EZ3
K4T51163QE
M378T2953EZ3
M391T2953EZ3
M378T2953EZ3-Ce7
M391T6553EZ3
DDR2-533
DDR2-667
DDR2-800
M391T
M391
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M470T2953EZ3
Abstract: abs 920 grade DDR2 SODIMM m470t6554ez3 DDR2 SODIMM SPD JEDEC DDR2-533 DDR2-667 DDR2-800 M470T3354EZ3 32MBX16
Text: SODIMM DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb E-die 64bit Non-ECC 60FBGA & 84FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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200pin
512Mb
64bit
60FBGA
84FBGA
64Mbx8
128Mx64
M470T2953EZ3
K4T51083QE
M470T2953EZ3
abs 920 grade
DDR2 SODIMM
m470t6554ez3
DDR2 SODIMM SPD JEDEC
DDR2-533
DDR2-667
DDR2-800
M470T3354EZ3
32MBX16
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M378T2863
Abstract: JESD79-2E 128mbx8 M378T5663QZ M378T2863QZ
Text: UDIMM DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 1Gb Q-die 64/72-bit Non-ECC/ECC 60FBGA & 84FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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240pin
64/72-bit
60FBGA
84FBGA
K4T1G084QQ
64Mbx16
64Mx64
M378T6464QZ
K4T1G164QQ
M378T2863
JESD79-2E
128mbx8
M378T5663QZ
M378T2863QZ
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Untitled
Abstract: No abstract text available
Text: CC1175 High Performance RF Transmitter for Narrowband Systems Applications Key Features One-way narrowband ultra low power wireless systems with channel spacing down to 6.25 kHz 170 / 315 / 433 / 868 / 915 / 920 / 950 MHz ISM/SRD band systems Wireless Metering and Wireless Smart Grid
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CC1175
CFR47
STD-T30
STD-T67
STD-T108
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Untitled
Abstract: No abstract text available
Text: CC1175 High Performance RF Transmitter for Narrowband Systems Applications Key Features One-way narrowband ultra low power wireless systems with channel spacing down to 6.25 kHz 170 / 315 / 433 / 868 / 915 / 920 / 950 MHz ISM/SRD band systems Wireless Metering and Wireless Smart Grid
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CC1175
CFR47
STD-T30
STD-T67
STD-T108
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Untitled
Abstract: No abstract text available
Text: CC1175 High Performance RF Transmitter for Narrowband Systems Applications Key Features One-way narrowband ultra low power wireless systems with channel spacing down to 6.25 kHz 170 / 315 / 433 / 868 / 915 / 920 / 950 MHz ISM/SRD band systems Wireless Metering and Wireless Smart Grid
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PDF
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CC1175
CFR47
STD-T30
STD-T67
STD-T108
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Untitled
Abstract: No abstract text available
Text: CC1175 High Performance RF Transmitter for Narrowband Systems Applications Key Features One-way narrowband ultra low power wireless systems with channel spacing down to 6.25 kHz 170 / 315 / 433 / 868 / 915 / 920 / 950 MHz ISM/SRD band systems Wireless Metering and Wireless Smart Grid
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CC1175
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M471B5773DH0
Abstract: M471B5273DH0 m471b5273 DDR3 sodimm 4gb samsung 78FBGA DDR3-1066 DDR3-1333 M471B5773
Text: Rev. 1.1, Aug. 2011 M471B5773DH0 M471B5273DH0 204pin Unbuffered SODIMM based on 2Gb D-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M471B5773DH0
M471B5273DH0
204pin
78FBGA
K4B2G0846D
256Mbx8
512Mx64
M471B5773DH0
M471B5273DH0
m471b5273
DDR3 sodimm 4gb samsung
DDR3-1066
DDR3-1333
M471B5773
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Untitled
Abstract: No abstract text available
Text: Rev. 1.4, May. 2012 M471B5773DH0 M471B5273DH0 204pin Unbuffered SODIMM based on 2Gb D-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M471B5773DH0
M471B5273DH0
204pin
78FBGA
K4B2G0846D
256Mbx8
512Mx64
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M471B5273DH0
Abstract: No abstract text available
Text: Rev. 1.4, May. 2012 M471B5773DH0 M471B5273DH0 204pin Unbuffered SODIMM based on 2Gb D-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M471B5773DH0
M471B5273DH0
204pin
78FBGA
K4B2G0846D
256Mbx8
512Mx64
M471B5273DH0
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M471B5273DH0
Abstract: M471B5773DH0 M471B5773 DDR3L m471 M471B5773DHS m471b5273 AC160 78FBGA DDR3-1066
Text: Rev. 1.0, Sep. 2010 M471B5773DH0 M471B5273DH0 204pin Unbuffered SODIMM based on 2Gb D-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M471B5773DH0
M471B5273DH0
204pin
78FBGA
K4B2G0846D
256Mbx8
512Mx64
M471B5273DH0
M471B5773DH0
M471B5773
DDR3L
m471
M471B5773DHS
m471b5273
AC160
DDR3-1066
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M471B5673
Abstract: m471b5673fh0-cf8 M471B5673fH JESD79-3E M471B2873FHS-CF8 JESD79-3E DDR3 JESD79-3 M471B5673FH0 DDR3 SODIMM SPD JEDEC cl11 DDR3 "application note"
Text: Rev. 1.31, Dec. 2010 M471B2873FHS M471B5673FH0 204pin Unbuffered SODIMM based on 1Gb F-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M471B2873FHS
M471B5673FH0
204pin
78FBGA
K4B1G0846F
128Mbx8
256Mx64
M471B5673
m471b5673fh0-cf8
M471B5673fH
JESD79-3E
M471B2873FHS-CF8
JESD79-3E DDR3
JESD79-3
M471B5673FH0
DDR3 SODIMM SPD JEDEC cl11
DDR3 "application note"
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M471B5673FH0
Abstract: M471B5673 DDR3L 78FBGA DDR3 sodimm 8gb samsung DDR3 SODIMM SPD JEDEC DDR3-1066 DDR3-1333 M471B2873FHS SSTL-15
Text: Rev. 1.1, Jan. 2010 M471B2873FHS M471B5673FH0 204pin Unbuffered SODIMM based on 1Gb F-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M471B2873FHS
M471B5673FH0
204pin
78FBGA
K4B1G0846F
128Mbx8
256Mx64
M471B5673FH0
M471B5673
DDR3L
DDR3 sodimm 8gb samsung
DDR3 SODIMM SPD JEDEC
DDR3-1066
DDR3-1333
M471B2873FHS
SSTL-15
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