Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL47D5263D-K0/K9/F8S REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47D5263D is a 512Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of
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VL47D5263D-K0/K9/F8S
512Mx64
204-PIN
VL47D5263D
256Mx8
204-pin
204-pin,
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: VL47B5263B-K9S/F8S/E7S-IU REV: 1.1 General Information 4GB 512MX64 DDR3 UNBUFFERED SODIMM 204 PIN WITH BGA DRAM COMPONENTS UNDER-FILLED Description The VL47B5263B is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module consists of
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VL47B5263B-K9S/F8S/E7S-IU
512MX64
VL47B5263B
256Mx8
204-pin
204-pin,
in-li00
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Untitled
Abstract: No abstract text available
Text: SG564128FG8NZUU March 4, 2009 Ordering Information Part Numbers Description Module Speed SG564128FG8NZDB 512Mx64 4GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 256Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0
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SG564128FG8NZUU
SG564128FG8NZDB
512Mx64
200-pin
256Mx8
DDR2-400-333,
PC2-3200
SG564128FG8NZDG
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K/DDR31066-666
Abstract: No abstract text available
Text: SG564128FH8NZUU February 23, 2009 Ordering Information Part Numbers Description Module Speed SG564128FH8NZKA 512Mx64 4GB , DDR3, 204-pin Unbuffered SO-DIMM, Non-ECC, 256Mx8 Based, DDR3-800-555, 30.00mm, Green Module (RoHS Compliant). PC3-6400 @ CL 5, 6 SG564128FH8NZ6B
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SG564128FH8NZUU
SG564128FH8NZKA
512Mx64
204-pin
256Mx8
DDR3-800-555,
PC3-6400
SG564128FH8NZ6B
K/DDR31066-666
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL47D5263D-K0/K9/F8S REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47D5263D is a 512Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of
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VL47D5263D-K0/K9/F8S
512Mx64
204-PIN
VL47D5263D
256Mx8
204-pin
204-pin,
PC3-12800,
PC3-10600,
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DDR3-1066
Abstract: DDR3-1333 PC3-10600
Text: Product Specifications PART NO: VL47B5263B-K9S/F8S/E7S-IU REV: 1.1 General Information 4GB 512MX64 DDR3 UNBUFFERED SODIMM 204 PIN WITH BGA DRAM COMPONENTS UNDER-FILLED Description The VL47B5263B is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module consists of
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VL47B5263B-K9S/F8S/E7S-IU
512MX64
VL47B5263B
256Mx8
204-pin
204-pin,
in-li00
DDR3-1066
DDR3-1333
PC3-10600
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View BGA 119 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3 0.3V power supply
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512Mx64-BGA
FN32G64VB8263
32Gbit
512Mx64,
512Mx8
512Mx64-bit
512Mx8-bit
MMFN64408808B-D
3DFP-0263-REV
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: VL47B5263A-K9S/F8S/E7S-I REV: 1.0 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM Description: The VL47B5263A is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module consists of sixteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM
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VL47B5263A-K9S/F8S/E7S-I
512MX64
VL47B5263A
256Mx8
204-pin
204-pin,
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TH20594MC1.4
Abstract: 577b
Text: Product Specifications 3$57 12 VL47B5263A-K9S/F8S/E7S-IU REV: 1.1 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM WITH BGA DRAM COMPONENTS UNDER-FILLED Description 7KH 9/%$ LV D 0[ ''5 6'5$0 KLJK GHQVLW\ 62',00 7KLV PHPRU\ PRGXOH FRQVLVWV RI
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VL47B5263A-K9S/F8S/E7S-IU
512MX64
TH20594MC1.4
577b
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MIL-I-46058C
Abstract: PC3-10600 204 pin so-DIMM DDR3 connector DDR3 sodimm 4gb samsung
Text: Product Specifications PART NO: VL47B5263Z-R9S/R8S/R7S-HS REV: 1.0 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM HEAT SPREADER AND CONFORMAL COATING Description: The VL47B5263Z is a 512M X 64 DDR3 SDRAM high density SODIMM. This memory module
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VL47B5263Z-R9S/R8S/R7S-HS
512MX64
VL47B5263Z
256Mx8
204-pin
204-pin,
MIL-I-46058C
PC3-10600
204 pin so-DIMM DDR3 connector
DDR3 sodimm 4gb samsung
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850C
Abstract: PC3-10600
Text: Product Specifications PART NO: VL47B5263A-K9S/F8S/E7S-I REV: 1.0 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM Description: The VL47B5263A is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module consists of sixteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM
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VL47B5263A-K9S/F8S/E7S-I
512MX64
VL47B5263A
256Mx8
204-pin
204-pin,
Fas00
850C
PC3-10600
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View BGA 119 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3 ± 0.3V power supply
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512Mx64-BGA
FN32G64VB8263
32Gbit
512Mx64,
512Mx8
512Mx64-bit
512Mx8-bit
MMFN64408808B-D
3DFP-0263-REV
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View - BGA 120 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3 0.3V power supply
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512Mx64-BGA
FN32G64VB8263
32Gbit
512Mx64,
512Mx8
512Mx64-bit
512Mx8-bit
MMFN64408808B-D
3DFP-0263-REV
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Untitled
Abstract: No abstract text available
Text: SG564128FG8N0UU January 11, 2009 Ordering Information Part Numbers Description Module Speed SG564128FG8N0DB 512Mx64 4GB , DDR2, 240-pin DIMM, Unbuffered, Non-ECC, 256Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0
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SG564128FG8N0UU
SG564128FG8N0DB
512Mx64
240-pin
256Mx8
DDR2-400-333,
PC2-3200
SG564128FG8N0DG
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL47B5263A-F8SD-I REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B5263A is a 512Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of sixteen CMOS 256Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM with
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VL47B5263A-F8SD-I
512Mx64
204-PIN
VL47B5263A
256Mx8
204-pin
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Untitled
Abstract: No abstract text available
Text: Product Specifications 3$57 12 VL47B5263A-K9S/F8S/E7S-IU REV: 1.1 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM WITH BGA DRAM COMPONENTS UNDER-FILLED Description 7KH 9/%$ LV D 0[ ''5 6'5$0 KLJK GHQVLW\ 62',00 7KLV PHPRU\ PRGXOH FRQVLVWV RI
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VL47B5263A-K9S/F8S/E7S-IU
512MX64
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL47B5463E-K9/F8/E7S REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM VLP NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B5463E is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module is single rank, consists
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VL47B5463E-K9/F8/E7S
512Mx64
204-PIN
VL47B5463E
512Mx8
204-pin
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Untitled
Abstract: No abstract text available
Text: SG564128FH8N0UU May 13, 2009 Ordering Information Part Numbers Description Module Speed SG564128FH8N0KA 512Mx64 4GB , DDR3, 240-pin Unbuffered DIMM, Non-ECC, 256Mx8 Based, DDR3-800-555, 30.00mm, Green Module (RoHS Compliant). PC3-6400 @ CL 5, 6 SG564128FH8N06B
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SG564128FH8N0UU
SG564128FH8N0KA
512Mx64
240-pin
256Mx8
DDR3-800-555,
PC3-6400
SG564128FH8N06B
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Untitled
Abstract: No abstract text available
Text: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:
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M2S1G64CBH4B5P
M2S2G64CB88B5N
M2S4G64CB8HB5N
PC3-8500
PC3-10600
PC3-12800
DDR3-1066/1333/1600
128Mx16
256Mx8
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Untitled
Abstract: No abstract text available
Text: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M471B5173BH0
M471B1G73BH0
204pin
78FBGA
K4B4G0846B
512Mbx8
1Gx64
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H5TQ2G63FFR-RDC
Abstract: H5TQ4G63MFRPBC H5TC8G83AMR-PBA HMT351U7EFR8C-PB H5TQ2G63DFR-PBC
Text: Page 1 DDR3 SDRAM Solder- Dow n VDD DENSI TY ORG. SPEED PART NUMBER PKG. FEATURE AVAI L. 1.5V 2Gb 256Mx8 DDR3 1866 H5TQ2G83EFR-RDC FBGA 78ball 8Bank, 1.5V, CL13,13-13-13 Now DDR3 1600 H5TQ2G83CFR-PBC FBGA(78ball) 8Bank, 1.5V, CL11,11-11-11 Now H5TQ2G83EFR-PBC
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256Mx8
H5TQ2G83EFR-RDC
78ball)
H5TQ2G83CFR-PBC
H5TQ2G83EFR-PBC
H5TQ2G83CFR-H9C
H5TQ2G83EFR-H9C
H5TQ2G63FFR-RDC
H5TQ4G63MFRPBC
H5TC8G83AMR-PBA
HMT351U7EFR8C-PB
H5TQ2G63DFR-PBC
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M378B5273BH1-CF8
Abstract: samsung dimm DDR3 SPD M391B5273BH1-CF8 M378B5273BH
Text: DDR3 SDRAM Unbuffered DIMM DDR3 SDRAM Specification 240pin Unbuffered DIMM based on 2Gb B-die 64/72-bit Non-ECC/ECC 78FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin
64/72-bit
78FBGA
256Mbx8
512Mx64/x72
K4B2G0846B-HC
M378B5273BH1-CF8
samsung dimm DDR3 SPD
M391B5273BH1-CF8
M378B5273BH
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Untitled
Abstract: No abstract text available
Text: 2GB 4GB X64, SR, DR : 204-Pin DDR3 SDRAM SODIMM SDRAM DDR3 256M, 512M X 64 SODIMM 204-Pin 4GB SODIMM Assembly Features: • DDR3 functionality and operations supported as defined in the component data sheet
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204-Pin
PC3-10600,
PC3-8500
DDR3-1066
DDR3-1333
256MX64
512MX64)
8125us
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HMT41GU6AFR8A
Abstract: No abstract text available
Text: 240pin DDR3L SDRAM Unbuffered DIMM DDR3L SDRAM Unbuffered DIMMs Based on 4Gb A-Die HMT425U6AFR6A HMT451U6AFR8A HMT451U7AFR8A HMT41GU6AFR8A HMT41GU7AFR8A *SK hynix reserves the right to change products or specifications without notice. Rev. 1.0 / May. 2013
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240pin
HMT425U6AFR6A
HMT451U6AFR8A
HMT451U7AFR8A
HMT41GU6AFR8A
HMT41GU7AFR8A
1Gx72
HMT41GU6AFR8A
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