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    ABB GTO GATE UNIT Search Results

    ABB GTO GATE UNIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM4GQF15FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GRF20FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4KMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4MMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NQF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation

    ABB GTO GATE UNIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GTO thyristor Curve properties

    Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
    Text: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by


    Original     		PDF 30J4502 35L4502 GTO thyristor Curve properties ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1

    GTO ABB 5SGA 2046

    Abstract: IG 2200 19
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 25x103 1.9 0.53 2200 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 30J4505 Doc. No. 5SYA1204-04 Sept. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J4505 5SYA1204-04 CH-5600 GTO ABB 5SGA 2046 IG 2200 19

    A125

    Abstract: B125 C125 D125
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 2500 1500 10x103 1.45 0.90 1400 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 15F2502 Doc. No. 5SYA1214-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 15F2502 5SYA1214-02 CH-5600 A125 B125 C125 D125

    press pack thyristor 10000 VDRM

    Abstract: LS 7313 S 5SGA40L4501 LS 7313 - S
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 March 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4501 5SYA1208-02 CH-5600 press pack thyristor 10000 VDRM LS 7313 S 5SGA40L4501 LS 7313 - S

    Untitled

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 Apr. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4501 5SYA1208-02 CH-5600

    RCD snubber

    Abstract: ABB GTO gate unit
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 600 3x103 1.9 3.5 2800 V A A V mW V Asymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY Doc. No. 5SYA1236-00 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses


    Original     		PDF 06D4502 5SYA1236-00 CH-5600 RCD snubber ABB GTO gate unit

    1419

    Abstract: capacitor abb
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 24x103 2.2 0.6 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 30J4502 Doc. No. 5SYA1202-03 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J4502 5SYA1202-03 CH-5600 1419 capacitor abb

    IGCT

    Abstract: IGCT thyristor ABB snubber IGCT IGCT 4.5kv IGCT thyristor IGCT thyristor ABB new ABB IGBT inverter PCIM 96 ABB thyristor modules symmetric IGCT
    Text: Application Specific IGCTs Eric Carroll, Bjoern Oedegard, Thomas Stiasny, Marco Rossinelli ICPE, October 2001, Seoul, Korea Copyright [2001] IEEE. Reprinted from the International Conference on Power Electronics. This material is posted here with permission of the IEEE. Such permission of the


    Original     		PDF ICPE01 IGCT IGCT thyristor ABB snubber IGCT IGCT 4.5kv IGCT thyristor IGCT thyristor ABB new ABB IGBT inverter PCIM 96 ABB thyristor modules symmetric IGCT

    5SGF40L4502

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 1.2 0.65 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGF 40L4502 Doc. No. 5SYA1209-04 Feb. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4502 5SYA1209-04 40L4502 CH-5600 5SGF40L4502

    GTO thyristor ABB

    Abstract: 40L4502
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 1.2 0.65 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGF 40L4502 Doc. No. 5SYA1209-04 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4502 5SYA1209-04 40L4502 CH-5600 GTO thyristor ABB

    abb phase control thyristors

    Abstract: 5szk
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 470 A = 740 A = 6.4x103 A = 1V = 1.5 mΩ Phase Control Thyristor 5STP 04D4200 Doc. No. 5SYA1025-05 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 04D4200 5SYA1025-05 04D4200 CH-5600 abb phase control thyristors 5szk

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 470 A = 740 A = 7.1•103 A = 1V = 1.5 mW Phase Control Thyristor 5STP 04D4200 Doc. No. 5SYA1025-07 Nov. 13 · Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications


    Original     		PDF 04D4200 5SYA1025-07 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 1150 A = 1800 A = 19x103 A = 0.95 V = 0.575 mW Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-06 Jul 13 • Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications


    Original     		PDF 12F4200 5SYA1021-06 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 470 A = 740 A = 8.0•103 A = 1V = 1.5 m Phase Control Thyristor 5STP 04D4200 Doc. No. 5SYA1025-06 Aug. 13 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications


    Original     		PDF 04D4200 5SYA1025-06 100ng CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 2075 A = 3260 A = 32x103 A = 0.96 V = 0.285 mΩ Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA1046-03 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 18H4200 5SYA1046-03 18H4200 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 1400 V = 1960 A = 3080 A = 25x103 A = 0.75 V = 0.157 mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-05 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 21F1400 5SYA1023-05 21F1400 CH-5600

    5STP12F4200

    Abstract: abb phase control thyristors
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 1150 A = 1800 A = 15x103 A = 0.95 V = 0.575 m Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-05 Feb 12 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications


    Original     		PDF 12F4200 5SYA1021-05 12F4200 CH-5600 5STP12F4200 abb phase control thyristors

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 1800 V = 1660 A = 2610 A = 21x103 A = 0.83 V = 0.23 mΩ Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA1028-05 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 18F1800 5SYA1028-05 18F1800 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 1150 A = 1800 A = 17.3•103 A = 0.95 V = 0.575 mW Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-07 Nov. 13 · Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications


    Original     		PDF 12F4200 5SYA1021-07 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 2800 V = 620 A = 970 A = 8.8•103 A = 0.92 V = 0.78 m Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA1020-05 Mar. 14 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications


    Original     		PDF 06D2800 5SYA1020-05 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 2800 V = 1400 A = 2210 A = 18x103 A = 0.82 V = 0.37 m Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA1022-04 May 12 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications


    Original     		PDF 16F2800 5SYA1022-04 16F2800 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 1150 A = 1800 A = 15x103 A = 0.95 V = 0.575 mΩ Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-04 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 12F4200 5SYA1021-04 12F4200 CH-5600

    abb phase control thyristors

    Abstract: 5STP16F2800
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 2800 V = 1400 A = 2210 A = 18x103 A = 0.82 V = 0.37 mΩ Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA1022-04 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 16F2800 5SYA1022-04 16F2800 CH-5600 abb phase control thyristors 5STP16F2800

    ABB inverter motor fault code

    Abstract: Bus Bar torque value table for metric bolts wg9017d2g CSG2001-14A04 2.5 kva inverter diagrams thyristor CSG2001-14A04 TOSHIBA S6475R WG9013A3A Bus Bar torque for metric bolts 3.5 kva inverter circuits
    Text: f l à ALLEN-BRADLEY ^ 5 5 ^ A R O C K W E L L IN T E R N A T IO N A L C O M P A N Y Allen-Bradley 1352C-PIUS GTO Replacement and Installation Guide Kit Instructions GTO Replacement GTO Replacement Kits are available to provide an easy method of changing a


    OCR Scan     		PDF 1352C-PIUS 1352C-6 P/N146071 ABB inverter motor fault code Bus Bar torque value table for metric bolts wg9017d2g CSG2001-14A04 2.5 kva inverter diagrams thyristor CSG2001-14A04 TOSHIBA S6475R WG9013A3A Bus Bar torque for metric bolts 3.5 kva inverter circuits