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    30J4502 Search Results

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    30J4502 Price and Stock

    ABB Low Voltage Products and Systems 5SGA 30J4502

    Thyristor: hockey-puck; 4.5kV; Ifmax: 1.46kA; 930A; Igt: 3A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 5SGA 30J4502 1
    • 1 $2949.08
    • 10 $2485.65
    • 100 $2485.65
    • 1000 $2485.65
    • 10000 $2485.65
    Get Quote

    ABB Low Voltage Products and Systems 5SGF 30J4502

    Thyristor: hockey-puck; 4.5kV; Ifmax: 1.51kA; 960A; Igt: 2.5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 5SGF 30J4502 1
    • 1 $2348.73
    • 10 $1906.37
    • 100 $1906.37
    • 1000 $1906.37
    • 10000 $1906.37
    Get Quote

    Hitachi Energy 5SGF30J4502

    GTO THYRISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD 5SGF30J4502 1
    • 1 -
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    Hitachi Energy 5SGA30J4502

    GTO THYRISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD 5SGA30J4502 1
    • 1 -
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    30J4502 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vt 1202

    Abstract: ABB thyristor 5 IP350K gto 5sga
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 2.20 0.60 2800 V A kA V Gate turn-off Thyristor 5SGA 30J4502 mΩ V Doc. No. 5SYA 1202-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


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    PDF 30J4502 CH-5600 vt 1202 ABB thyristor 5 IP350K gto 5sga

    30J4502

    Abstract: capacitor abb 5sgf30j4502 GTO thyristor ABB
    Text: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 24 VT0 = 1.80 rT = 0.70 VDClink = 3000 V A kA V Gate turn-off Thyristor 5SGF 30J4502 mΩ V Doc. No. 5SYA 1211-04 April 98 Features The 5SGF 30J4502 is a 85 mm buffered layer GTO with exceptionally low dynamic and static


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    PDF 30J4502 30J4502 CH-5600 capacitor abb 5sgf30j4502 GTO thyristor ABB

    GTO thyristor ABB

    Abstract: ABB thyristor 5 GTO ABB GTO thyristor gto switching test abb 5sgf30j4502
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 1.80 0.70 3000 V A kA V Gate turn-off Thyristor 5SGF 30J4502 mΩ V PRELIMINARY Doc. No. 5SYA 1211-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


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    PDF 30J4502 30J4502 CH-5600 GTO thyristor ABB ABB thyristor 5 GTO ABB GTO thyristor gto switching test abb 5sgf30j4502

    gto Gate Drive

    Abstract: gto Gate Drive circuit GTO thyristor ABB GTO ABB thyristor 5 GTO ABB
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 30 1.17 0.31 2800 V A kA V Gate turn-off Thyristor 5SGT 30J4502 mΩ V PRELIMINARY Doc. No. 5SYA 1215-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


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    PDF 30J4502 30J4502 CH-5600 gto Gate Drive gto Gate Drive circuit GTO thyristor ABB GTO ABB thyristor 5 GTO ABB

    1419

    Abstract: capacitor abb
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 24x103 2.2 0.6 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 30J4502 Doc. No. 5SYA1202-03 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


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    PDF 30J4502 5SYA1202-03 CH-5600 1419 capacitor abb

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 24 VT0 = 2.20 rT = 0.60 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGA 30J4502 mΩ V Doc. No. 5SYA 1202-03 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


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    PDF 30J4502 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 30 VT0 = 1.17 rT = 0.31 VDClink = 2800 Gate turn-off Thyristor V A kA V mΩ V 5SGT 30J4502 PRELIMINARY Doc. No. 5SYA 1215-03 Mar. 97 Features The 5SGT 30J4502 is an 85 mm buffered layer, Transparent Emitter non-shorted anode


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    PDF 30J4502 30J4502 0E-03 0E-02 0E-01 CH-5600

    GTO thyristor Curve properties

    Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
    Text: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by


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    PDF 30J4502 35L4502 GTO thyristor Curve properties ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1

    5SDF01R2501

    Abstract: 5SGA 5SGA30J2501 RTK 031
    Text: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt­ grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes­


    OCR Scan
    PDF 01R2501 05D2501 05D2501 15F2502 20H2501 25H2501 30J2501 20H4502 11F2501 03D4501 5SDF01R2501 5SGA 5SGA30J2501 RTK 031

    ABB 5SGA

    Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
    Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s


    OCR Scan
    PDF 15F2502 15F2502 05D2501 01R2501 20H2501 05D2501 11F2501 25H2501 ABB 5SGA 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502