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    51L2200

    Abstract: IGCT ABB 5STP 5SDD igct abb 51L2800 high power igct abb
    Text: VRSM = 2800 V IFAVM = 5150 A IFRMS = 8080 A IFSM = VF0 = 0.77 V rF = 0.082 mΩ Ω 65 kA Rectifier Diode 5SDD 51L2800 Doc. No. 5SYA1103-01 Sep. 01 • Patented free-floating silicon technology • Very low on-state losses • High average and surge current.


    Original     		PDF 51L2800 5SYA1103-01 51L2600 51L2200 CH-5600 51L2200 IGCT ABB 5STP 5SDD igct abb 51L2800 high power igct abb

    Abb breakover diode

    Abstract: IGCT thyristor ABB IGCT ABB thyristor modules symmetric IGCT GTO thyristor ABB ABB 5STP 5SDD 5SBB20T 5sbb20 5sbb
    Text: P A R T N U M B E R I N G S T R U C T U R E & _ O R D E R I N G _C O D E LoPak 5SN S 0200 V 12 0 000 P ro d u ct G roup -5SN = IGBT Module C o n fig u ra tio n -S = Six-pack Module


    OCR Scan     		PDF