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    51L2800 Search Results

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    51L2800 Price and Stock

    Eaton Bussmann NRCE151L2800B1KS

    THERMISTOR 15 OHM 2800 BETA
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    DigiKey NRCE151L2800B1KS Bulk 2,000
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    • 10000 $0.10557
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    Sager NRCE151L2800B1KS 1,000
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    • 1000 $0.0857
    • 10000 $0.075
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    Eaton Bussmann NRCE151L2800B1KO

    THERMISTOR 15 OHM 2800 BETA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NRCE151L2800B1KO Bulk 2,000
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    • 1000 -
    • 10000 $0.10557
    Buy Now
    Sager NRCE151L2800B1KO 1,000
    • 1 -
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    • 1000 $0.0857
    • 10000 $0.075
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    Eaton Corporation NRCE151L2800B1KS

    Thermistor NTC 15Ohm 15% 20s 2-Pin Radial Leaded Bulk - Bulk (Alt: NRCE151L2800B1KS)
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    Avnet Americas NRCE151L2800B1KS Bulk 12 Weeks 2,000
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    • 10000 $0.07236
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    Mouser Electronics NRCE151L2800B1KS
    • 1 $0.25
    • 10 $0.19
    • 100 $0.149
    • 1000 $0.11
    • 10000 $0.097
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    Eaton Corporation NRCE151L2800B1KO

    Thermistor NTC 15Ohm 15% 20s 2-Pin Radial Leaded Bulk - Bulk (Alt: NRCE151L2800B1KO)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NRCE151L2800B1KO Bulk 12 Weeks 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.07236
    Buy Now
    Mouser Electronics NRCE151L2800B1KO
    • 1 $0.25
    • 10 $0.19
    • 100 $0.149
    • 1000 $0.11
    • 10000 $0.097
    Get Quote

    Eaton Electronics NRCE151L2800B1KS

    Nrce Ntc, 15 Ohm, 2800 Beta/ Bulk |Eaton Electronics NRCE151L2800B1KS
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    Newark NRCE151L2800B1KS Bulk 2,000
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    • 1000 $0.128
    • 10000 $0.117
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    51L2800 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    51L2200

    Abstract: IGCT ABB 5STP 5SDD igct abb 51L2800 high power igct abb
    Text: VRSM = 2800 V IFAVM = 5150 A IFRMS = 8080 A IFSM = VF0 = 0.77 V rF = 0.082 mΩ Ω 65 kA Rectifier Diode 5SDD 51L2800 Doc. No. 5SYA1103-01 Sep. 01 • Patented free-floating silicon technology • Very low on-state losses • High average and surge current.


    Original
    PDF 51L2800 5SYA1103-01 51L2600 51L2200 CH-5600 51L2200 IGCT ABB 5STP 5SDD igct abb 51L2800 high power igct abb

    Untitled

    Abstract: No abstract text available
    Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 2800 5380 8450 65x103 0.77 0.082 Rectifier Diode V A A A V mΩ 5SDD 51L2800 Doc. No. 5SYA1103-01 Feb. 05 • Patented free-floating silicon technology • Very low on-state losses • High average and surge current.


    Original
    PDF 51L2800 5SYA1103-01 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 2800 5380 8450 65x103 0.77 0.082 Rectifier Diode V A A A V 5SDD 51L2800 mW Doc. No. 5SYA1103-02 Apr. 13 • Patented free-floating silicon technology · Very low on-state losses · High average and surge current.


    Original
    PDF 51L2800 5SYA1103-02 CH-5600

    5SDD51L2200

    Abstract: k 175 parameters
    Text: Key Parameters V r sm s 2800 V ^ FAVM = 5150 A a 8080 A s 65000 A = 0.77 V ^FRMS ^FSM - Rectifier Diode 5SDD 51L2800 0.082 m ft Ooc. No. 5SYA 1103-01 Jan.95 Features • Patented free-floating silicon technology. • Very low on-state power losses. • High average and surge current


    OCR Scan
    PDF 51L2800 51L2800 51L2600 51L2200 5SYA1103 CH-5600 5SDD51L2200 k 175 parameters