Untitled
Abstract: No abstract text available
Text: ¿57 TYP E S GS-THOMSON ¡[LiCTIiMOOS N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STH 12N A60 STH 12N A60FI STW 12N A60 STH12NA60/FI STW12NA60 dss 600 V 600 V 600 V R DS on Id < 0 .6 Q. < 0 .6 Q. < 0 .6 Q. 12 A 7 A 12 A . TYPICAL R DS(on) = 0.44 Q.
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A60FI
STH12NA60/FI
STW12NA60
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Untitled
Abstract: No abstract text available
Text: STW 9 NA60 S T H 9 N A 6 0 FI S G S -T H O M S O N [M O ig œ ilL ie ra *® N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STW 9N A60 STH 9N A60FI • . . . . . . V dss RDS on Id 600 V 600 V < 0 .8 Q. < 0 .8 Q. 9.5 A 6.4 A TYPICAL RüS(on) = 0.69 Cl
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A60FI
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STH8NA60FI
Abstract: No abstract text available
Text: £jï SGS-THOMSON ULKgraMOeS STH8NA60 A60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TH 8N A60 S TH 8N A60FI • . . . . . . V dss RDS on Id 600 V 600 V < 1 Q. < 1 Q. 8 A 5 A TYPICAL RDS(on) = 0.92 £2 ± 30V GATE TO SOURCE VOLTAGE RATING
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A60FI
STH8NA60
STH8NA60FI
STH8NA60FI
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3Na60
Abstract: No abstract text available
Text: *57 SGS-THOMSON 3NA60 S T P 3 N A6 0 F I stp iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA60 STP3N A60FI V dss R DS(on) Id 600 V 600 V < 4 a <4 a 2.9 A 2.1 A . T Y P IC A L R Ds (on) = 3.3 Q m ± 30V G A TE TO S O U R C E V O LTA G E R ATING
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3NA60
STP3NA60
A60FI
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8NA60
Abstract: No abstract text available
Text: SGS-THOMSON !LiM@iO gS STW8NA60 A60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIM IN ARY DATA TYPE STW 8N A60 S TH 8N A60FI . rn . . . . . V dss RDS(on Id 600 V 600 V < 1 Î2 < 1 Q 8 A 5 A TYPICAL Ftos(on) = 0 .9 2 Cl ± 30V GATE TO SOURCE VOLTAGE RATING
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STW8NA60
STH8NA60FI
A60FI
8NA60
8NA60
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sth7na60
Abstract: No abstract text available
Text: £ jï 1 0 SGS- H M S N ULKgraMOeS 7 60 60 STH NA STH NA FI 7 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ADVANCE DATA TYP E S TH 7N A60 S TH 7N A60FI • . . . . . . V dss RDS on Id 600 V 600 V < 1 .2 il 7.2 A 4 .6 A < 1 .2 il TYPICAL RDS(on) = 1 £2
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A60FI
sth7na60
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Untitled
Abstract: No abstract text available
Text: Eu SGS-THOMSON STW8NA60 A60FI ilLiOTMOlêS N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V STW 8N A60 S TH 8N A60FI • . ■ > . . . dss 600 V 600 V R D S o n Id < 1 n < 1 fl 8 A 5 A TYPICAL RDS(on) = 0.92 Î2 ± 30V GATE TO SOURCE VOLTAGE RATING
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STW8NA60
STH8NA60FI
A60FI
7T2T237
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9NA60
Abstract: transistor d 1557 A60FI STW9NA60
Text: SGS-THOMSON !LiM iO gS STW9NA60 A60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V STW 9NA60 STH 9N A60FI • . . . . . . dss 600 V 600 V R D S (o n Id < 0 .8 Î2 < 0.8 Q 9.5 A 6.4 A TYPICAL RDS(on) = 0.69 Ü ± 30V GATE TO SOURCE VOLTAGE RATING
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STW9NA60
STH9NA60FI
9NA60
A60FI
O-247
ISOWATT218
9NA60
transistor d 1557
A60FI
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G907
Abstract: A60FI P5NA60
Text: *57 SGS-THOMSON 60 S T P 5 N A6 0 F I stpsna iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA60 STP5N A60FI • . . ■ ■ . ■ V dss R DS(on) Id 600 V 600 V < 1.6 a < 1.6 a 5.3 A 3.4 A TYPICAL RDS(on) = 1.35 £2 ± 30V GATE TO SOURCE VOLTAGE RATING
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STP5NA60
A60FI
G907
A60FI
P5NA60
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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7NA60
Abstract: No abstract text available
Text: *57 SGS-THOMSON 7NA60 S T P 7 N A6 0 F I stp iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7N A 60 A60FI • • . ■ ■ . ■ V dss R DS(on) Id 600 V 600 V < 1 a < 1 a 7.2 A 4 .4 A T Y P IC A L RDS(on) = 0.92 Q ± 30V G A TE TO S O U R C E V O LTA G E R ATING
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STP7NA60FI
7NA60
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P6nA60
Abstract: 6na60 NA60FI
Text: *57 TYPE STP6N A 60 A60FI . . . • ■ . ■ 6 60 6 60 SGS-THOMSON iLiOT !Q £I stp NA STP NA FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss R DS(on Id 600 V 600 V < 1.2 a < 1.2 a 6.5 A 3.9 A TYPICAL R DS(on) = 1 Q ± 30V GATE TO SOURCE VOLTAGE RATING
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STP6NA60FI
P6nA60
6na60
NA60FI
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Untitled
Abstract: No abstract text available
Text: * 5 4 60 4 60 SGS-THOMSON iL iO M K I 7 stp NA STP NA FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA60 A60FI • . . ■ ■ . ■ V dss R DS on Id 600 V 600 V < 2.2 a < 2.2 a 4.3 A 2.7 A TYPICAL RDS(on) = 1 -85 ± 30V GATE TO SOURCE VOLTAGE RATING
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STP4NA60
STP4NA60FI
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