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    A2118 Search Results

    A2118 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    P7A2118PQWDRBRQ1 Texas Instruments Automotive, 500mA, low-noise ultra-low-IQ high-PSRR low-dropout (LDO) voltage regulator 8-SON -40 to 125 Visit Texas Instruments
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    A2118 Price and Stock

    Renesas Electronics Corporation RAA211820GNP-HA0

    IC REG BUCK ADJ 2A 20QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RAA211820GNP-HA0 Digi-Reel 5,570 1
    • 1 $5.11
    • 10 $3.413
    • 100 $2.4769
    • 1000 $1.96828
    • 10000 $1.83847
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    RAA211820GNP-HA0 Cut Tape 5,570 1
    • 1 $5.11
    • 10 $3.413
    • 100 $2.4769
    • 1000 $1.96828
    • 10000 $1.83847
    		Buy Now

    Renesas Electronics Corporation RAA211835GNP-HA0

    IC REG BUCK ADJ 3A 20QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RAA211835GNP-HA0 Cut Tape 5,550 1
    • 1 $5.11
    • 10 $3.413
    • 100 $2.4769
    • 1000 $1.96828
    • 10000 $1.83847
    		Buy Now
    RAA211835GNP-HA0 Digi-Reel 5,550 1
    • 1 $5.11
    • 10 $3.413
    • 100 $2.4769
    • 1000 $1.96828
    • 10000 $1.83847
    		Buy Now

    Renesas Electronics Corporation RAA2118054GP3-JA0

    IC REG BUCK 5V 300MA TSOT23-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RAA2118054GP3-JA0 Cut Tape 2,759 1
    • 1 $2.01
    • 10 $1.28
    • 100 $0.8728
    • 1000 $0.6494
    • 10000 $0.6494
    		Buy Now
    RAA2118054GP3-JA0 Digi-Reel 2,759 1
    • 1 $2.01
    • 10 $1.28
    • 100 $0.8728
    • 1000 $0.6494
    • 10000 $0.6494
    		Buy Now

    Renesas Electronics Corporation RAA2118034GP3-JA0

    IC REG BUCK 3.3V 300MA TSOT23-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RAA2118034GP3-JA0 Cut Tape 2,560 1
    • 1 $2.01
    • 10 $1.28
    • 100 $0.8728
    • 1000 $0.6494
    • 10000 $0.6494
    		Buy Now

    Renesas Electronics Corporation RAA211835GSP-HA0

    IC REG BUCK ADJ 3A 16HTSSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RAA211835GSP-HA0 Digi-Reel 2,316 1
    • 1 $5.11
    • 10 $3.413
    • 100 $2.4769
    • 1000 $1.96828
    • 10000 $1.96828
    		Buy Now
    RAA211835GSP-HA0 Cut Tape 2,316 1
    • 1 $5.11
    • 10 $3.413
    • 100 $2.4769
    • 1000 $1.96828
    • 10000 $1.96828
    		Buy Now
    Find more A2118 price and stock on Findchips.com

    A2118 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BA100 diode

    Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
    Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance


    Original     		PDF K5C6481NT 4Mx16) 512Kx16) 512Kx10 81-Ball 80x11 BA100 diode BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106

    A211801E

    Abstract: 200B103 LM7805 PTFA211801E
    Text: A211801E A211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The A211801E and A211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA211801E PTFA211801F 180-watt, 2140dangerous A211801E 200B103 LM7805

    74h 132

    Abstract: WA.N4
    Text: Renesas LSIs Preliminary M5M29KB/T641ATP Notice: This is not a final specification. Some parametric limits are subject to change. 67,108,864-BIT 8,388,608-WORD BY 8-BIT /4,194,304-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION M5M29KB/T641ATP provides for Software Lock Release function.


    Original     		PDF M5M29KB/T641ATP 864-BIT 608-WORD 304-WORD 16-BIT) M5M29KB/T641ATP 864-bit REJ03C0236 74h 132 WA.N4

    LM7805

    Abstract: A211801E BCP56 PTFA211801E R250 H-36260-2 infineon 6260
    Text: A211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The A211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA211801E PTFA211801E 180-watt, H-36260-2 LM7805 A211801E BCP56 R250 H-36260-2 infineon 6260

    A69008

    Abstract: a69108 AA-6111 c5411 b58506 B-537-08 19070 C-830-14X B889 a945
    Text: AT1990 Air Head Crimp Tool Air Powered Crimp Tool Head Avikrimp  and Insulkrimp  Application Tooling Specification Sheet Order No. 64005-0100 Engineering No. AT 1990 Replaces 19283-0001 FEATURES Quick-change tool head for the 19279-0001 (AT-200)


    Original     		PDF AT1990 AT-200) ATS-640050100 A69008 a69108 AA-6111 c5411 b58506 B-537-08 19070 C-830-14X B889 a945

    Untitled

    Abstract: No abstract text available
    Text: A211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The A211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA211801E PTFA211801E 180-watt, H-36260-2

    A69108

    Abstract: A69008 BA631x A69106
    Text: AT1990 Air Head Crimp Tool Air Powered Crimp Tool Head Avikrimp  and Insulkrimp  Application Tooling Specification Sheet Type AT Order No. 64005-0100 Engineering No. AT 1990 FEATURES Quick-change tool head for the 19279-0001 AT-200 Tooling kit is interchangeable with other kits in the 64001 and 64003 Series


    Original     		PDF AT1990 AT-200) ATS-640050100 A69108 A69008 BA631x A69106

    PTFA211801E

    Abstract: a211 BCP56 LM7805 PTFA211801F
    Text: A211801E A211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The A211801E and A211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA211801E PTFA211801F PTFA211801E PTFA211801F 180-watt, a211 BCP56 LM7805

    3.3kOhm

    Abstract: No abstract text available
    Text: Renesas LSIs M5M29KB/T641AVP 67,108,864-BIT 8,388,608-WORD BY 8-BIT /4,194,304-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T641AVP are 3.3V-only high speed 67,108,864-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO


    Original     		PDF M5M29KB/T641AVP 864-BIT 608-WORD 304-WORD 16-BIT) M5M29KB/T641AVP 864-bit REJ03C0024 3.3kOhm

    samsung date code decorder

    Abstract: SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp
    Text: KBA0101A0M / KBA0201A0M KBA0301A0M / KBA0401A0M Preliminary MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory *2 / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark


    Original     		PDF KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M 4Mx16) 2Mx16) 512Kx16) LIM-011025 samsung date code decorder SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp

    transistor sr61

    Abstract: BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor
    Text: K5T6432YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History 1.0 Draft Date Final Specification Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K5T6432YT 4Mx16) 2Mx16) 81-Ball 80x11 transistor sr61 BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor

    a69108

    Abstract: A69008 a945 AA-6111 1913 C-83-01 C-830-14X A6211 A69106 19070-0016
    Text: RHT 1990 Hand Crimp Tool Hand Crimp Tool Avikrimp  and Insulkrimp  Application Tooling Specification Sheet Order No. 64001-0100 Engineering No. RHT 1990 FEATURES A full cycle ratcheting hand tool ensures complete crimps Long handles for comfortable crimping with reduced crimping force


    Original     		PDF ATS-640010100 a69108 A69008 a945 AA-6111 1913 C-83-01 C-830-14X A6211 A69106 19070-0016

    A69008

    Abstract: a69108 AA-6111 A-620 a945 C640-10 b58108 MIL-T-7928 bb 509 bb 36 931
    Text: RHT1990 Hand Crimp Tool Hand Crimp Tool Operating Instruction Sheet And Specifications Part No. 64001-0100 Eng. No. RHT 1990 Replaces 19285-0004 FEATURES § § § § § A full cycle ratcheting hand tool ensures complete crimps Long handles for comfortable crimping with reduced crimping force


    Original     		PDF RHT1990 A69008 a69108 AA-6111 A-620 a945 C640-10 b58108 MIL-T-7928 bb 509 bb 36 931

    A211801E

    Abstract: PTFA211801E
    Text: A211801E A211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The A211801E and A211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA211801E PTFA211801F 180-watt, 2140dangerous A211801E

    A2187

    Abstract: A2198 A2039 transistor A2039 A2039 transistor A2180 a2057 A1013 A2023 transistor A3301
    Text: IA-64 Assembler User’s Guide January 2000 Order Number: 712173-001 World Wide Web: http://developer.intel.com THIS DOCUMENT IS PROVIDED “AS IS” WITH NO WARRANTIES WHATSOEVER, INCLUDING ANY WARRANTY OF MERCHANTABILITY, NONINFRINGEMENT, FITNESS FOR ANY PARTICULAR PURPOSE, OR ANY WARRANTY OTHERWISE ARISING OUT OF ANY


    Original     		PDF IA-64 32-bit A2187 A2198 A2039 transistor A2039 A2039 transistor A2180 a2057 A1013 A2023 transistor A3301

    A211801E

    Abstract: A0912 TMA210 PTFA211801E A091201E "RF Power Transistors" ER 2680 PTF080101M PTF080101S PTF140451E
    Text: Preliminary Product Selection Guide Preliminary Product Selection Guide Pac kag es ffor or LDMO S RF P ower Tran sistor s and IC s ack age LDMOS Po ans ors ICs RF Power Product Selection Guide TEP AC - Therm al ly -Enh anc ed C er amic TEPA Thermal ally ly-Enh


    Original     		PDF H-30248-2 H-36248-2 H-30260-2 H-36260-2 H-30265-2 H-31248-2 H-37248-2 H-31260-2 H-31260-2 H-31265-2 A211801E A0912 TMA210 PTFA211801E A091201E "RF Power Transistors" ER 2680 PTF080101M PTF080101S PTF140451E

    BA100 diode

    Abstract: BA133 diode diode ba102 SAMSUNG MCP BA102 diode BA102 bufer BA114 BA122 BA125
    Text: K5C6417YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 16M Bit (1Mx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Advance 0.0 Initial Draft August 29, 2001 1.0 Revised - Changed F-Vcc Max. Value (from 3.0V to 3.3V)


    Original     		PDF K5C6417YT 4Mx16) 1Mx16) 81-Ball 80x11 08MAX BA100 diode BA133 diode diode ba102 SAMSUNG MCP BA102 diode BA102 bufer BA114 BA122 BA125

    2190 ic for lg tv

    Abstract: CD 4081 Cmos 2 input and gate IC lg tv electronic board schematic epson FC-135 marking mod 8 ring counter using JK flip flop AM 5766 inverter schematic diagram dc-ac inverter sk a1106 510 power supply using bd 182 BT 4840
    Text: S1X60000 Series DESIGN GUIDE EMBEDDED ARRAY S1X60000 Series DESIGN GUIDE S1X60000 Series DESIGN GUIDE ELECTRONIC DEVICES MARKETING DIVISION EPSON Electronic Devices Website http://www.epsondevice.com This manual was made with recycle papaer, and printed using soy-based inks.


    Original     		PDF S1X60000 2190 ic for lg tv CD 4081 Cmos 2 input and gate IC lg tv electronic board schematic epson FC-135 marking mod 8 ring counter using JK flip flop AM 5766 inverter schematic diagram dc-ac inverter sk a1106 510 power supply using bd 182 BT 4840

    A2118

    Abstract: SC-65
    Text: 2SK1081 -01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S lOutline Drawings • Features • High speed switching • L :>w on-resistance • No secondary breakdown • Low driving power • High voltage • V GSs— ±30V Guarantee


    OCR Scan     		PDF SC-65 A2118 SC-65

    A2118

    Abstract: 2sk mosfet k1081
    Text: 2SK1081-01 FUJI POWER MOS-FET N - C H A N N E L S IL IC O N P O W E R M O S - F E T p j j g £ p | £ g • Outline Drawings ■ features • High speed switching • Law on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 3 0 V Guarantee


    OCR Scan     		PDF 2SK1081-01 A2118 2sk mosfet k1081

    2SK1081-01

    Abstract: SC-65 A2118
    Text: 2SK1081-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • features lOutline Drawings • High speed switching • L w on-resistance • No secondary breakdown • Low driving power • High voltage • V gss= ± 30 V Guarantee • Avalanche-proof


    OCR Scan     		PDF 2SK1081-01 SC-65 2SK1081-01 SC-65 A2118