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    A21 EEPROM Search Results

    A21 EEPROM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    X28C512JI-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    FM93CS46M8 Rochester Electronics LLC EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8 Visit Rochester Electronics LLC Buy
    NM93C56EN Rochester Electronics LLC EEPROM, 128X16, Serial, CMOS, PDIP8, PLASTIC, DIP-8 Visit Rochester Electronics LLC Buy
    X28C512DM-15 Rochester Electronics LLC EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, CERDIP-32 Visit Rochester Electronics LLC Buy

    A21 EEPROM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    403A-03

    Abstract: so20w CR0805 AD11 AD30
    Text: P3V VIO P1 P2 PCI_5V A1 1 P3V VIO VIO A2 2 +12V_PCI A3 3 TCK TDO A5 5 5 B5 A6 6 6 B6 INTA# A7 7 X7 1 A8 8 A9 9 X11 1 X12 X10 X50 C3 0.01 CC0805 2 2 CC0805 16 B16 17 B17 GNT# 18 B18 REQ# 19 B19 PME# A20 20 20 B20 AD31 AD30 A21 21 21 B21 AD29 A22 22 22 B22 AD28


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    CC0805 MBRS130LT3 03A-03 CR0805 403A-03 so20w CR0805 AD11 AD30 PDF

    PU27

    Abstract: 29lv800bb PAL16V8 PU22 MCF5206eFT samtec connector ipl1 simm 72pin PU10 SPR10 SPR11
    Text: A A[0.23] B C D E A[0.23] J1 J2 4 4 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 3 A16 A17 A18 A19 A20 A21 A22 A23 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33


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    10-way 768KHz DS1307Z RS-232, M5206eLITE PU27 29lv800bb PAL16V8 PU22 MCF5206eFT samtec connector ipl1 simm 72pin PU10 SPR10 SPR11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Description The PUMA 84 range of devices provide a high density, surface mount memory solution with density up to twice that of standard monolithic devices. The PUMA 84 may accomodate various memory technologies including SRAM, FLASH and EEPROM. The devices are designed to offer a


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    84FV256006 120ns 150ns PDF

    810B1

    Abstract: 20-FFH A1286-2 811b1 CRD-68P-M17 2 M flash memory 812b2
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-30336-2E MEMORY FLASH MEMORY CARD PCMCIA Rel.2/JEIDA Ver.4 conformable MB98A809Bx-/810Bx-/811Bx-/812Bx-25 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE • DESCRIPTION The Fujitsu MB98A809Bx, MB98A810Bx, MB98A811Bx and MB98A812Bx are Flash electrically erasable and


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    DS05-30336-2E MB98A809Bx-/810Bx-/811Bx-/812Bx-25 MB98A809Bx, MB98A810Bx, MB98A811Bx MB98A812Bx 68-pin F9704 810B1 20-FFH A1286-2 811b1 CRD-68P-M17 2 M flash memory 812b2 PDF

    F150 regulator

    Abstract: PQFP100
    Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD DATA BRIEFING • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)


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    ST92F124/ST92F150/ST92F250 8/16-BIT J1850 TQFP64 14x14 16-bit F150 regulator PQFP100 PDF

    29f400

    Abstract: No abstract text available
    Text: Description The PUMA 84 range of devices provide a high density, surface mount memory solution with density up to twice that of standard monolithic devices. The PUMA 84 may accomodate various memory technologies including SRAM, FLASH and EEPROM. The devices are designed to offer a


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    84FV256006 150ns. 29f400 PDF

    Untitled

    Abstract: No abstract text available
    Text: Description The PUMA 84 range of devices provide a high density, surface mount memory solution with density up to twice that of standard monolithic devices. The PUMA 84 may accomodate various memory technologies including SRAM, FLASH and EEPROM. The devices are designed to offer a


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    84FV256006 PDF

    INDEPENDENT INK 73X

    Abstract: CEF-A21 71jl128 bonus ball sheets S71JL064HA0BAW01
    Text: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features


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    S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 73-ball 88-ball S71JLxxxH S29JL064H 16-only S71JLxxxHxx INDEPENDENT INK 73X CEF-A21 71jl128 bonus ball sheets S71JL064HA0BAW01 PDF

    d666

    Abstract: CRX14 STM1404 st nand flash application note firmware cash register JTCK STEVAL-IPC001V1 STR710FZ2 A6 P113
    Text: STEVAL-IPC001V1 Electronic fiscal cash register Data Brief Features • 4-Mbyte Flash, 32-Mbyte NAND and 1-Mbyte SRAM on board ■ Two smartcard readers ■ STM1404 secure chip, FIPS 140-2 compliant ■ Ethernet 10Base-T, 3 UARTs, 1 RS-485, 1 PS/ 2, 1 USB full speed, 4 x I2C, 1 x SPI, 2 LCDs


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    STEVAL-IPC001V1 32-Mbyte STM1404 10Base-T, RS-485, 64Mbyte 64-Mbyte CRX14 d666 st nand flash application note firmware cash register JTCK STEVAL-IPC001V1 STR710FZ2 A6 P113 PDF

    CPA4

    Abstract: Jumper JP2e LEDTX CPD14 A41 transformer PCD-15 a4510 CPD11 MCS 96 users manual CPA17
    Text: ASSP CMOS DK86967 Users Guide Table of Contents List of Figures Introduction .3 Design Kit DK86967-ISA Schematic .3 Board Configurations .5


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    DK86967 DK86967-ISA DK86967-PCC CPA4 Jumper JP2e LEDTX CPD14 A41 transformer PCD-15 a4510 CPD11 MCS 96 users manual CPA17 PDF

    MB98A81331

    Abstract: CRD-68P-M05
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-30326-1E MEMORY FLASH MEMORY CARD PCMCIA Rel.2/JEIDA Ver.4 conformable MB98A8113x-/8123x-/8133x-/8143x-20 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 2 M/4 M/8 M/16 M-BYTE • DESCRIPTION The Fujitsu MB98A8113x, MB98A8123x, MB98A8133x and MB98A8143x are electrically erasable and


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    DS05-30326-1E MB98A8113x-/8123x-/8133x-/8143x-20 MB98A8113x, MB98A8123x, MB98A8133x MB98A8143x 68-pin F9706 MB98A81331 CRD-68P-M05 PDF

    INDEPENDENT INK 73X

    Abstract: FTA073 S29JL064H spansion pdip 32 marking format 3105P
    Text: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features


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    S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 S71JLxxxH S29JL064H 16-only 73-ball 88-ball S71JLxxxHxx INDEPENDENT INK 73X FTA073 spansion pdip 32 marking format 3105P PDF

    D1651

    Abstract: 2A084 D1229 84FV256006
    Text: Issue 5.1 April 2001 Description The PUMA 84 range of devices provide a high density, surface mount memory solution with density up to twice that of standard monolithic devices. The PUMA 84 may accomodate various memory technologies including SRAM, FLASH and


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    84FV256006 150ns. 120ns 150ns D1651 2A084 D1229 PDF

    84FV

    Abstract: PUMA84
    Text: Issue 5.0 November 1999 Description The PUMA 84 range of devices provide a high density, surface mount memory solution with density up to twice that of standard monolithic devices. The PUMA 84 may accomodate various memory technologies including SRAM, FLASH and


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    84FV256006 84FV PUMA84 PDF

    Untitled

    Abstract: No abstract text available
    Text: 64 Mbit x16 Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B SST39VF640xB2.7V 64Mb (x16) MPF+ memories Preliminary Specifications FEATURES: • Organized as 4M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical)


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    SST39VF6401B SST39VF6402B SST39VF640xB2 SST39VF6401B MO-210, 48-tfbga-B1K-8x10-450mic-4 48-BALL S71288-01-000 PDF

    28256 eeprom

    Abstract: DS1235Y
    Text: 0S1235Y/AB DALLAS DS1235Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR PIN DESCRIPTION FEATURES • Data retention in the absence of Vcc A141 1 A121 2 A71 3 A61 4 AS 1 5 A41 6 A31 7 A21 8 A11 9 AO1 10 DQO1 11 OQ1 1 12 DQ2 1 13 GND1 14 • Data is automatically protected during power


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    0S1235Y/AB DS1235Y/AB 28-pin DS1235Y) DS1235AB) 144-b 200ns 28256 eeprom DS1235Y PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC58V32AFT/ADC TO SH IBA M OS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 32 Mbit 4 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TC58V32AFT/ADC device is a single volt 32 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 16 pages X 512 blocks.


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    TC58V32AFT/ADC TC58V32AFT/ADC PDF

    810B

    Abstract: No abstract text available
    Text: MEMORY • IS MB98A809B x -/810B x -/811B x -/812B x -25 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE ■ DESCRIPTION The Fujitsu MB98A809Bx, MB98A810Bx, MB98A811Bx and MB98A%l2Bx are Flash electrically erasable and programmable Flash memory cards capable of storing and. retrievin^siarge amounts of data. The memory


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    MB98A809B -/810B -/811B -/812B MB98A809Bx, MB98A810Bx, MB98A811Bx MB98A 16-bit F9704 810B PDF

    20A1

    Abstract: fujitsu PCMCIA flash
    Text: œ FUJITSU DATASHEET: MB98A8092X- / 8102x- / 8112x- / 8122x-25 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARD 512K / 1M / 2M / 4M -BYTE The Fujitsu MB98A8092x, MB98A8102x, MB98A8112x and MB98A8122x are Flash electrically eraseable and programmable Flash memory cards capable of


    OCR Scan
    MB98A8092X- 8102x- 8112x- 8122x-25 MB98A8092x, MB98A8102x, MB98A8112x MB98A8122x 68-pin 16-bit 20A1 fujitsu PCMCIA flash PDF

    seiko epson RAM IC MEMORY CARD "40 pin"

    Abstract: mask rom MRC1281 a21 eeprom
    Text: MASK ROM OUTLINE The MASK ROM IC MEMORY CARD series is made up of Masked ROM chips. The memory sizes available are from 128K Bytes to 4M Bytes. IE series is 8 bit wide data bus. VARIATION Part Number MRC1281 ECO MRC256IEC0 MRC512IEC0 MRC100IEC0 MRC200IEC0


    OCR Scan
    MRC1281 MRC256IEC0 MRC512IEC0 MRC100IEC0 MRC200IEC0 MRC400IEC0 128KB 256KB 512KB seiko epson RAM IC MEMORY CARD "40 pin" mask rom a21 eeprom PDF

    TCP 8126

    Abstract: No abstract text available
    Text: M ay 1992 Edition 1.1 FUJITSU DATA SHEET M B 9 8 A 8 0 9 2 X - / 8 1 0 2 x - / 8 1 1 2 x - / 8 1 2 2 x -2 5 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARD 512K / 1 M / 2 M / 4M -BYTE The Fujitsu MB98A8092x, MB98A8102x, MB98A8112x and MB98A8122x are


    OCR Scan
    MB98A8092x, MB98A8102x, MB98A8112x MB98A8122x 68-pin 16-bit 374T75b MB98A8092X-25 MB98A8102X-25 MB98A8112X-25 TCP 8126 PDF

    fujitsu PCMCIA flash

    Abstract: No abstract text available
    Text: •T o T o p f tìm u p i In d e x MEMORY ÌBI S MB98A809B x -/810B x -/811B x -/812B x -25 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE • DESCRIPTION The Fujitsu MB98A809Bx, MB98A810Bx, MB98A811Bx and MB98A%l2Bx are Flash electrically erasable and


    OCR Scan
    MB98A809B -/810B -/811B -/812B MB98A809Bx, MB98A810Bx, MB98A811Bx MB98A 16-bit F9704 fujitsu PCMCIA flash PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1994 Edition 1.0 FUJITSU DATA SHEET MB98A 8113X-/8 123x- / 8 1 33x- / 8 143x-20 FLASH MEMORY CARD FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 2M / 4M / 8M / 1 6M-BYTE The Fujitsu MB98A8113x, MB98A8123x, MB98A8133x and MB98A8143x are electrically erasable and programmable Flash memory cards capable of storing


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    MB98A 8113X-/8 143x-20 MB98A8113x, MB98A8123x, MB98A8133x MB98A8143x 68-pin 16-bit JV0029-943J1 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 4 M x 8 BITS CMOS NAND E^PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.


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    TC58V32DC TC58V32DC 528-byte, 528-byte 256bytes: 528bytes PDF