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    ARM926T

    Abstract: ic str 6454 s11 stopping compound motorola 7824 BT OSC26M CNC DRIVES ptc temperature sensor 400c 4*4 matrix keypad 17521 rca SAMSUNG NAND FLASH K9F5608
    Text: i.MX21 Applications Processor Reference Manual Document Number: MC9328MX21RM Rev. 3 04/2007 How to Reach Us: Home Page: www.freescale.com E-mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370


    Original     		PDF MC9328MX21RM CH370 ARM926T ic str 6454 s11 stopping compound motorola 7824 BT OSC26M CNC DRIVES ptc temperature sensor 400c 4*4 matrix keypad 17521 rca SAMSUNG NAND FLASH K9F5608

    K9S2808V0C

    Abstract: K9S6408V0C K9S5608V0X
    Text: K9S5608V0C/B K9S2808V0C/B K9S6408V0C/B SmartMediaTM Document Title SmartMediaTM Card Revision History Revision No Draft Date Remark 0.0 Initial issue July 17th 2000 0.1 1. Explain how pointer operation works in detail. 2. Updated operation for tRST timing


    Original     		PDF K9S5608V0C/B K9S2808V0C/B K9S6408V0C/B K9S2808V0C K9S6408V0C K9S5608V0X

    SAMSUNG K9F1208U0B

    Abstract: K9F1208* technical K9F1208U0B K9F1208U0B-YCB0 K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B-D
    Text: K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark Aug. 24th 2003 Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.


    Original     		PDF K9F1208Q0B K9F1208D0B K9F1208U0B SAMSUNG K9F1208U0B K9F1208* technical K9F1208U0B K9F1208U0B-YCB0 K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B-D

    AT45D161

    Abstract: AT45DB161B TSOP 28 SPI memory Package flash AT45D161-JC PA10 PA11
    Text: Features • Single 4.5V - 5.5V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram Erase and Program – 4096 Pages (528 Bytes/Page) Main Memory Optional Page and Block Erase Operations


    Original     		PDF 528-byte 1081C 01/01/xM AT45D161 AT45DB161B TSOP 28 SPI memory Package flash AT45D161-JC PA10 PA11

    Flash MCp nand DRAM 107-ball

    Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
    Text: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF KAG00H008M-FGG2 256Mb 32Mx8) 4Mx16x4Banks) 128Mb 107-Ball 80x13 Flash MCp nand DRAM 107-ball SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density

    K9F1208U0C-PCB

    Abstract: No abstract text available
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PCB0000 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 K9F1208U0C-PCB

    SAMSUNG NAND Flash Qualification Report

    Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PIB0T00 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 SAMSUNG NAND Flash Qualification Report K9F1208U0CJIB0 marking date code samsung semiconductor

    512M x 8 Bit NAND Flash Memory

    Abstract: K9K1208U0A K9K1208U0A-VCB0 K9K1208U0A-VIB0
    Text: K9K1208U0A-VCB0, K9K1208U0A-VIB0 FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Initial issue April. 17 2001 Remark Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.


    Original     		PDF K9K1208U0A-VCB0, K9K1208U0A-VIB0 K9K1208U0A-Vnever 48-PIN 1217F 50TYP 512M x 8 Bit NAND Flash Memory K9K1208U0A K9K1208U0A-VCB0 K9K1208U0A-VIB0

    K9F1208B0B

    Abstract: K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V K9F1208U0B-Y K9F1208U0BYCB0
    Text: K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9F1208R0B K9F1208B0B K9F1208U0B K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V K9F1208U0B-Y K9F1208U0BYCB0

    SAMSUNG 256Mb NAND Flash Qualification Reliability

    Abstract: K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 hamming code 512 bytes
    Text: K9K1208U0M-YCB0, K9K1208U0M-YIB0 FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue June 19th 2000 Preliminary - The followings are disprepancy items between K9K5608U0M 256Mb


    Original     		PDF K9K1208U0M-YCB0, K9K1208U0M-YIB0 K9K5608U0M 256Mb K9K1208U0M 512Mb SAMSUNG 256Mb NAND Flash Qualification Reliability K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 hamming code 512 bytes

    sram 2112

    Abstract: 001H 106H NXSF014B-0699
    Text: NX25F011A NX25F041A NX25F011A NX25F041A 1M-BIT AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE PRELIMINARY JUNE 1999 2 FEATURES • Flash Storage for Resource-Limited Systems – Ideal for portable/mobile and microcontroller-based applications that store voice, text, and data


    Original     		PDF NX25F011A NX25F041A 264-byte 10K/100K NXSF014B-0699 sram 2112 001H 106H NXSF014B-0699

    for lpc3180

    Abstract: UM10198 PLL397 Philips power supply PE 1957 8044 8048 microcontroller role in keyboard interface nand flash algorithm, arm9, micron LM 4088 hynix nand PROGRAMMING K9K1208Q0C
    Text: UM10198 LPC3180 User Manual Rev. 01 — 6 June 2006 Document information Info Content Keywords LPC3180; ARM9; 16/32-bit ARM microcontroller Abstract User manual for LPC3180 User manual UM10198 Philips Semiconductors LPC3180 User Manual Revision history Rev


    Original     		PDF UM10198 LPC3180 LPC3180; 16/32-bit LPC3180 UM10198 for lpc3180 PLL397 Philips power supply PE 1957 8044 8048 microcontroller role in keyboard interface nand flash algorithm, arm9, micron LM 4088 hynix nand PROGRAMMING K9K1208Q0C

    HY27UF082G2A

    Abstract: HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb HY27UF hynix nand hynix nand spare area
    Text: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY27UF 256Mx8bit/128Mx16bit) HY27UF082G2A HY27UF162G2A HY27UF082G2A HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb hynix nand hynix nand spare area

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information SmartMediaTM K9S5608V0A-SSB0 Document Title 32M x 8 Bit SmartMediaTM Card Revision History Revision No 0.0 History Draft Date Remark Initial issue July 17th 2000 Advanced Information Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.


    Original     		PDF K9S5608V0A-SSB0

    K9F1208U0C-PCB0

    Abstract: K9F1208U0C k9f1208u0cpcb0 k9f1208r0c K9F1208X0C K9F1208U0C-P K9F1208B0C K9F1208B0C-P K9F1208R0C-J
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C 100ns) K9F1208U0C-PCB0 K9F1208U0C k9f1208u0cpcb0 K9F1208X0C K9F1208U0C-P K9F1208B0C K9F1208B0C-P K9F1208R0C-J

    sck 083

    Abstract: at45db321 code TH sck 083 780 AC AT45DB321 TSOP 28 SPI memory Package flash PA10 PA11 PA12
    Text: Features • Single 2.7V - 3.6V Supply • Serial-interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram Erase and Program – 8192 Pages (528 Bytes/Page) Main Memory Optional Page and Block Erase Operations


    Original     		PDF 528-byte 1121B 11/99/xM sck 083 at45db321 code TH sck 083 780 AC AT45DB321 TSOP 28 SPI memory Package flash PA10 PA11 PA12

    SmartMedia Logical Format

    Abstract: date code body marking samsung date code marking samsung K9S3208V0A K9S3208V0A-SSB0 SMFV004A SmartMedia Logical Format ID maker code SmartMedia Physical Format
    Text: SmartMediaTM K9S3208V0A-SSB0 Document Title 4M x 8 bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark 0.0 Initial Issue April 10th 1999 Final 0.1 1. Revised real-time map-out algorithm refer to technical notes 2. Changed voltage-density model marking method on SmartMedia


    Original     		PDF K9S3208V0A-SSB0 SMFV004A SmartMedia Logical Format date code body marking samsung date code marking samsung K9S3208V0A K9S3208V0A-SSB0 SmartMedia Logical Format ID maker code SmartMedia Physical Format

    Samsung NAND

    Abstract: No abstract text available
    Text: K9F5608Q0B-DCB0,DIB0 K9F5608U0B-YCB0,YIB0 K9F5608U0B-DCB0,DIB0 K9F5616Q0B-DCB0,DIB0 K9F5616U0B-YCB0,YIB0 K9F5616U0B-DCB0,DIB0 K9F5608U0B-VCB0,VIB0 K9F56XXQ0B:Preliminary K9F5616X0B:Preliminary FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory


    Original     		PDF K9F5608Q0B-DCB0 K9F5608U0B-YCB0 K9F5608U0B-DCB0 K9F5616Q0B-DCB0 K9F5616U0B-YCB0 K9F5616U0B-DCB0 K9F5608U0B-VCB0 K9F56XXQ0B K9F5616X0B Samsung NAND

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information SmartMediaTM K9S3208V0B-SSB0 Document Title 4M x 8 bit SmartMedia TM Card Revision History Revision No. History 0.0 Initial Issue Draft Date Remark July 17th 2000 Advanced Information Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.


    Original     		PDF K9S3208V0B-SSB0

    Untitled

    Abstract: No abstract text available
    Text: K9F5608Q0C-DCB0,DIB0 K9F5608U0C-YCB0,YIB0 K9F5608U0C-DCB0,DIB0 K9F5616Q0C-DCB0,DIB0 K9F5616U0C-YCB0,YIB0 K9F5616U0C-DCB0,DIB0 Advance K9F5608U0C-VCB0,VIB0 FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History


    Original     		PDF K9F5608Q0C-DCB0 K9F5608U0C-YCB0 K9F5608U0C-DCB0 K9F5616Q0C-DCB0 K9F5616U0C-YCB0 K9F5616U0C-DCB0 K9F5608U0C-VCB0

    K9F1208U0C-PCB0

    Abstract: marking date code samsung semiconductor K9F1208U0C K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T K9F1208U0C-JIB0T
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C o824KB K9F1208U0C-FIB00 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 K9F1208U0C-PCB0T K9F1208U0C-PCB0 marking date code samsung semiconductor K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T

    Untitled

    Abstract: No abstract text available
    Text: K9F2808Q0C-BCB0,BIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-BCB0,BIB0 K9F2816Q0C-BCB0,BIB0 K9F2816U0C-YCB0,YIB0 K9F2816U0C-BCB0,BIB0 K9F2808U0C-VCB0,VIB0 Advance FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History


    Original     		PDF K9F2808Q0C-BCB0 K9F2808U0C-YCB0 K9F2808U0C-BCB0 K9F2816Q0C-BCB0 K9F2816U0C-YCB0 K9F2816U0C-BCB0 K9F2808U0C-VCB0

    hynix NAND ECC

    Abstract: reset nand flash HYNIX hynix nand spare area hynix nand flash 2gb transistor Marking 1K32 63FBGA 256kb nand flash Hynix E NAND hynix nand PROGRAMMING
    Text: Preliminary HY27UG162G5A Series 2Gbit 128Mx16bit NAND Flash 2Gb NAND FLASH HY27UG162G5A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY27UG162G5A 128Mx16bit) HY27UG162G5A hynix NAND ECC reset nand flash HYNIX hynix nand spare area hynix nand flash 2gb transistor Marking 1K32 63FBGA 256kb nand flash Hynix E NAND hynix nand PROGRAMMING

    Untitled

    Abstract: No abstract text available
    Text: Features * Single 4.5V - 5.5V Supply * Serial Interface Architecture * Page Program Operation - Single Cycle Reprogram Erase and Program - 4096 Pages (528 Bytes/Page) Main Memory * Optional Page and Block Erase Operations * Two 528-Byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of


    OCR Scan     		PDF 528-Byte 06/98/XM