Hitachi DSA002746
Abstract: No abstract text available
Text: HM62W8256B Series 2 M SRAM 256-kword x 8-bit ADE-203-992 (Z) Preliminary, Rev. 0.0 Jan. 11, 1999 Description The Hitachi HM62W8256B is a 2-Mbit static RAM organized 262,144-kword × 8-bit. HM62W8256B Series has realized higher density, higher performance and low power consumption by employing HiCMOS process technology. The HM62W8256B Series offers low power standby power dissipation;
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HM62W8256B
256-kword
ADE-203-992
144-kword
32-pin
Com1628)
Hitachi DSA002746
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Hitachi DSA002746
Abstract: No abstract text available
Text: HM62V8256BI Series 2 M SRAM 256-kword x 8-bit ADE-203-1004 (Z) Preliminary, Rev. 0.0 Jan. 19, 1999 Description The Hitachi HM62V8256BI Series is 2-Mbit static RAM organized 262,144-kword × 8-bit. HM62V8256BI Series has realized higher density, higher performance and low power consumption by
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HM62V8256BI
256-kword
ADE-203-1004
144-kword
32-pin
ns/100
Hitachi DSA002746
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Hitachi DSA002746
Abstract: No abstract text available
Text: HM62Y8256BI Series 2 M SRAM 256-kword x 8-bit ADE-203-1003 (Z) Preliminary, Rev. 0.0 Jan. 20, 1999 Description The Hitachi HM62Y8256BI Series is 2-Mbit static RAM organized 262,144-kword × 8-bit. HM62Y8256BI Series has realized higher density, higher performance and low power consumption by
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HM62Y8256BI
256-kword
ADE-203-1003
144-kword
32-pin
Hitachi DSA002746
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M29W010B
Abstract: PLCC32 TSOP32
Text: M29W010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory PRELIMINARY DATA 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 45ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte
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M29W010B
128Kb
16Kbytes
M29W010B
PLCC32
TSOP32
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AN1122
Abstract: M29W010B PLCC32 TSOP32
Text: M29W010B 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 10µs by Byte typical ■ 8 UNIFORM 16 Kbyte MEMORY BLOCKS
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M29W010B
128Kb
PLCC32
TSOP32
AN1122
M29W010B
PLCC32
TSOP32
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an1171
Abstract: EES3 IC 7414 datasheet A128C AN1154 8031 MICROCONTROLLER 8031 pin diagram application note for checksum calculation eeprom PROGRAMMING tutorial motorola 68hc11 applications note
Text: AN1154 APPLICATION NOTE 8031 / M88 FLASH+PSD Design Tutorial This tutorial takes you step-by-step through the development cycle of a M88x3Fxx based design, from design entry, to programming the device. The first part of this tutorial shows how a M8813F1x can be used
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AN1154
M88x3Fxx
M8813F1x
an1171
EES3
IC 7414 datasheet
A128C
AN1154
8031 MICROCONTROLLER
8031 pin diagram
application note for checksum calculation
eeprom PROGRAMMING tutorial
motorola 68hc11 applications note
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M29F010B
Abstract: Device M29F010B AN1122 PDIP32 PLCC32 TSOP32 M29F010
Text: M29F010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45 ns ■ PROGRAMMING TIME – 8 µs per Byte typical ■ 8 UNIFORM 16 KBytes MEMORY BLOCKS ■ PROGRAM/ERASE CONTROLLER
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M29F010B
128Kb
PLCC32
TSOP32
PDIP32
M29F010B
Device M29F010B
AN1122
PDIP32
PLCC32
TSOP32
M29F010
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TSOP32 Package
Abstract: M29W010B PLCC32 TSOP32 AN1122
Text: M29W010B 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 10µs by Byte typical ■ 8 UNIFORM 16 Kbyte MEMORY BLOCKS
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M29W010B
128Kb
PLCC32
TSOP32
TSOP32 Package
M29W010B
PLCC32
TSOP32
AN1122
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IR RECEIVER TUTORIAL
Abstract: T28C256 8031 intel 8031 MICROCONTROLLER 80c31 code manual WSI Cross Reference A128C256 8031 MICROCONTROLLER interfacing to ROM intel 8031 power verilog code for implementation of eeprom
Text: PSD813F1/ 80C31 Design Tutorial Application Note 057 By Dan Harris and Mark Rootz February, 1999 47280 Kato Road, Fremont, CA 94538 Telephone: 510 -656-5400 (800) TEAM-WSI (832-6974) Web Site: http://waferscale.com E-mail: [email protected] Return to Main Menu
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PSD813F1/
80C31
1999--REV
IR RECEIVER TUTORIAL
T28C256
8031 intel
8031 MICROCONTROLLER
80c31 code manual
WSI Cross Reference
A128C256
8031 MICROCONTROLLER interfacing to ROM
intel 8031 power
verilog code for implementation of eeprom
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SMD MARKING A69
Abstract: 5246M 12166X778 12149X778 SMD marking A67 5249Y ST26K Apem Components 5636 12146X778 631SH
Text: TOGGLE SWITCHES A TINY 0.4VA 20V SP X TL TINY 1/2A 48V 0.4VA 20V SP,DP X S MINIATURE 0.4VA 20V 2A 250VAC SP,DP X ESD PROTECTION TL WASHABLE POLES PAGE S X X A2-A5 X X A6-A9 X X X A10-A13 X X X A14-A16 VDE RATINGS (Max. in bold) CSA SIZE UL P. C. MOUNT SERIES
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250VAC
A10-A13
A14-A16
125ck
137DIA)
4631A22UU
4431A22UU
SMD MARKING A69
5246M
12166X778
12149X778
SMD marking A67
5249Y
ST26K
Apem Components 5636
12146X778
631SH
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M29F010B
Abstract: AN1122 PDIP32 PLCC32 TSOP32
Text: M29F010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte typical ■ 8 UNIFORM 16 Kbytes MEMORY BLOCKS ■ PROGRAM/ERASE CONTROLLER
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M29F010B
128Kb
PLCC32
TSOP32
PDIP32
M29F010B
AN1122
PDIP32
PLCC32
TSOP32
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Device M29F010B
Abstract: AN1122 M29F010B PDIP32 PLCC32 TSOP32 A/M29F010B(45/70/90/K50EH5 A/M29F010B(45/70/90/MT352/CG/S29AL004D55TFI02
Text: M29F010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte typical ■ 8 UNIFORM 16 Kbytes MEMORY BLOCKS
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M29F010B
128Kb
PLCC32
TSOP32
PDIP32
Device M29F010B
AN1122
M29F010B
PDIP32
PLCC32
TSOP32
A/M29F010B(45/70/90/K50EH5
A/M29F010B(45/70/90/MT352/CG/S29AL004D55TFI02
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A128C256
Abstract: 80c31 application 8031P H0902 eeprom PROGRAMMING tutorial h0908 WSI Cross Reference 29F010 EPM7064S EPM7064SLC84-5
Text: 3/22/98 – REV 1.0 Design Tutorial, PSD813F1 – 80C31 Application Note 057 Preliminary By Dan Harris and Mark Rootz Contents 1 Introduction . 2
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PSD813F1
80C31
A128C256
80c31 application
8031P
H0902
eeprom PROGRAMMING tutorial
h0908
WSI Cross Reference
29F010
EPM7064S
EPM7064SLC84-5
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push button switch 2 pin
Abstract: 10BASET pm5350 transistor SMD making code 3fb d32 7b5 "Lookaside Cache" diode 36b3 MIC29501 application R3F SMD smd b6h
Text: Freescale Semiconductor, Inc. User’s Manual PQ2FADS-VR-UM Revision 0.0 June 12, 2003 Freescale Semiconductor, Inc. PQ2FADS-VR User’s Manual PQ2FADS-VR User’s Manual Motorola, Inc., 2003 For More Information On This Product, Go to: www.freescale.com
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Hitachi DSA002746
Abstract: No abstract text available
Text: HM62W8256BI Series 2 M SRAM 256-kword x 8-bit ADE-203-1005 (Z) Preliminary, Rev. 0.0 Jan. 19, 1999 Description The Hitachi HM62W8256BI is a 2-Mbit static RAM organized 262,144-kword × 8-bit. HM62W8256BI Series has realized higher density, higher performance and low power consumption by employing HiCMOS process technology. The HM62W8256BI Series offers low power standby power dissipation;
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HM62W8256BI
256-kword
ADE-203-1005
144-kword
32-pin
Hitachi DSA002746
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AN1122
Abstract: JESD97 M29W010B PLCC32 TSOP32
Text: M29W010B 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 10µs by Byte typical ■ 8 UNIFORM 16 Kbyte MEMORY BLOCKS
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M29W010B
128Kb
PLCC32
TSOP32
AN1122
JESD97
M29W010B
PLCC32
TSOP32
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Untitled
Abstract: No abstract text available
Text: M29W010B 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 10µs by Byte typical ■ 8 UNIFORM 16 Kbyte MEMORY BLOCKS
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M29W010B
128Kb
PLCC32
TSOP32
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GC102
Abstract: 8088 motherboard schematics ASC 8.000MHz crystal oscillator cpu 416-2 DP CQA03 coa030 sd 7406 ero 1818 74ALS245 TI HA 7406
Text: G-TUO -CE} INC D 5 D E I 3 7 7 7 4 7 S OGGOOt ,4 S I i i u i u i 7v ; c i o 2 12/16MHz PC/AT Compatible C h ip set Features Description • Highly Integrated PC/AT Com patible Three Chip Set. The GC101/GC102 is a fully IBM PC/AT compatible chip set support
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377747S
12/16MHZ
16MHz
12MHz
GC101/GC102
16MHz.
/RAS40
/RAS6080
RAS40
GC102
8088 motherboard schematics
ASC 8.000MHz crystal oscillator
cpu 416-2 DP
CQA03
coa030
sd 7406
ero 1818
74ALS245
TI HA 7406
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CHIPset for 80286
Abstract: SL6003 A1719 logicstar TL4A sl6005
Text: ADDRESS & DATA BUS BUFFERS SL6003, SL6004, SL6005 17 PC/A T COMPATIBLE CHIP-SET W PRELIMINARY The SL6003 provides address latches and control buffers for the PC / AT system. Control signals from the SL6001 are buffered by the SL6003 and tri-stated for the expansion and the I/O buses. This
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SL6003,
SL6004,
SL6005
SL6003
SL6001
68-pin
SL6004
CHIPset for 80286
A1719
logicstar
TL4A
sl6005
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c106 1006
Abstract: GC101-12 C144 sa 2n3904, itt GC101 41256 ram memory mapper A1723 GC101/GC102 GC101-16
Text: GCIOI / GC102 12/16 MHZ PC/AT COMPATIBLE CHIP SET G2 Description Features • Highly integrated PC /A T compatible three chip set. • Supports up to 4 M eg D R A M using 1M or 256k devices. • Available in 16MHz and 12MHz ver sions. • Designed in CM OS for low power
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GC102
16MHz
12MHz
GC101/GC102
16MHz.
implemented/RAS100
/RAS100
c106 1006
GC101-12
C144 sa
2n3904, itt
GC101
41256 ram
memory mapper
A1723
GC101-16
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28F1000
Abstract: 28F1000PC 28f1000p MX28F1000 MXIC MX
Text: m PKELIIflilOliiARV MX28F1000 A MACDOWX. 1M-BIT *l 28K x 8 CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 90/120/150 ns • Low power consumption - 50mA maximum active current
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MX28F1000
100mA
10OOQC-12
10OOQC-15
28F1000T
28F1000TC
28F1000R
28F1000
28F1000PC
28f1000p
MX28F1000
MXIC MX
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Untitled
Abstract: No abstract text available
Text: M29W010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory PRELIMINARY DATA 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 45ns FAST PROGRAMMING TIME: 1Ojas typical PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Byte-by-Byte
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M29W010B
128Kb
16Kbytes
TSOP32
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P82A203
Abstract: P82C202 CS8220 P82A204 RAS 0510 KMC 2120 82C201 82c202 cpu P82C201-10 82C202
Text: 82C201, 8 2 C 2 0 1 -1 0 /8 2 C 2 0 2 /8 2 A 2 0 3 /8 2 A 2 0 4 /8 2 A 2 0 5 CS8220: PC/AT COMPATIBLE C H IP S e t“ • Fully IBM'" PC AT Compatible ■ Flexible architecture allows usage in any iAPX 286 design ■ Early ALE Generation ■ Early RAS Generation
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82C201,
82C201-10/82C202/82A203/82A204/82A205
CS8220:
82C201
82C202,
82A203,
82A204
82A205
CS8220
P82A203
P82C202
P82A204
RAS 0510
KMC 2120
82c202 cpu
P82C201-10
82C202
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TC55V4400FT-10,-12,-15 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION The TC55V4400FT is a 16,777,216-bit high-speed static random access memory SRAM organized as 4,194,304 words by 4 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high
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TC55V4400FT-10
304-WORD
TC55V4400FT
216-bit
54-P-400-0
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