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    A03TJ Search Results

    A03TJ Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    A03TJLB Coilcraft Inc General Purpose Inductor, 0.008uH, 5%, 1 Element, Air-Core, SMD, 1618, CHIP, 1618, ROHS COMPLIANT Visit Coilcraft Inc
    A03TJLC Coilcraft Inc General Purpose Inductor, 0.008uH, 5%, 1 Element, Air-Core, SMD, 1618, CHIP, 1618, ROHS COMPLIANT Visit Coilcraft Inc
    A03TJL Coilcraft Inc RF inductor, air core, 5/10% tol, SMT, RoHS Visit Coilcraft Inc
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    A03TJ Price and Stock

    Coilcraft Inc A03TJLC

    RF Inductors - SMD 8nH Unshld 5% 4A 2.6mOhms AECQ2
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    Mouser Electronics A03TJLC 225
    • 1 $2.06
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    Bristol Electronics A03TJLC 1,055
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    A03TJLC 269 7
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    • 1000 $0.2812
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    Quest Components A03TJLC 2,778
    • 1 $0.9375
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    A03TJLC 1,153
    • 1 $0.5625
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    A03TJLC 413
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    A03TJLC 215
    • 1 $1
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    Coilcraft Direct A03TJLC 18,098 1
    • 1 $0.97
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    Chip Stock A03TJLC 708
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    Coilcraft Inc A03TJ

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    Bristol Electronics A03TJ 1,006
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    Quest Components A03TJ 3,211
    • 1 $1.05
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    A03TJ 424
    • 1 $1.75
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    ComSIT USA A03TJ 2,015
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    Coilcraft Inc A03TJLB

    1 ELEMENT, 0.008 uH, AIR-CORE, GENERAL PURPOSE INDUCTOR, SMD
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    Quest Components A03TJLB 8
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    A03TJ Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    A03TJ Coilcraft Inductor: RF: 8n: 5%: 150M: 140: Air: T/R Original PDF
    A03TJ Coilcraft Mini Spring Air Core Inductors Original PDF
    A03TJLB Coilcraft RF inductor, air core, 5/10% tol, SMT, RoHS Original PDF
    A03TJLC Coilcraft RF inductor, air core, 5/10% tol, SMT, RoHS Original PDF

    A03TJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    W316

    Abstract: Diode W316
    Text: DB-54003L-512 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5 V ■ Output power: 5 W ■ Efficiency: 54 % - 63 % ■ Load mismatch: 20:1


    Original     		PDF DB-54003L-512 PD54003L DB-54003L-512 W316 Diode W316

    Diode W316

    Abstract: 102J DB-54003L-512 EXCELDRC35C GRM42-6 PD54003L TL11 W-309 W309 FR460
    Text: DB-54003L-512 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5 V ■ Output power: 5 W ■ Efficiency: 54 % - 63 % ■ Load mismatch: 20:1


    Original     		PDF DB-54003L-512 PD54003L DB-54003L-512 Diode W316 102J EXCELDRC35C GRM42-6 PD54003L TL11 W-309 W309 FR460

    Untitled

    Abstract: No abstract text available
    Text: T2G4003532-FL 30W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4003532-FL T2G4003532-FL TQGaN25

    capacitor 330pF ATC

    Abstract: 8W 0.01% resistor NV SMD TRANSISTOR SMD 1206 RESISTOR 100 OHMS 3214W-1-103E A03TJ B09TJ BZX284C5V1 DB-55008-500 EXCELDRC35C
    Text: DB-55008-500 RF POWER amplifier using 1 x PD55008 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 500MHz ■ Supply voltage: 12.5V ■ Output power: 8W ■ Efficiency: 48% - 54% ■ Load mismatch: 20:1


    Original     		PDF DB-55008-500 PD55008 500MHz DB-55008-500 capacitor 330pF ATC 8W 0.01% resistor NV SMD TRANSISTOR SMD 1206 RESISTOR 100 OHMS 3214W-1-103E A03TJ B09TJ BZX284C5V1 EXCELDRC35C

    Untitled

    Abstract: No abstract text available
    Text: NPT2022 Gallium Nitride 48V, 100W, DC-2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2 GHz 48V Operation Industry Standard Plastic Package


    Original     		PDF NPT2022 NPT2022 NDS-038

    Untitled

    Abstract: No abstract text available
    Text: DB-54003-470 RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.5V ■ Output power: 3W ■ Efficiency: 50% - 53% ■ Load mismatch: 20:1


    Original     		PDF DB-54003-470 PD54003 470MHz DB-54003-470

    GRM42-6X7R103

    Abstract: ATC 17 25 ATC 220 capacitor 100b c14 c13 tyco RESISTOR POTENTIOMETER ATC 100A 100JW capacitor 10 pf zener 100B zener 1206 5.1 v
    Text: DB-55008L-450 Component ID B1 B2 C1 C2,C3 C4 C6, C7 C8 C9 C11,C12 C13 C14 C15 C16 C17 L1,L2 L3,L4 L5 R1 R2 R3 R4 D1 TL1 TL2 TL3 TL4 TL5 TL6 PD55008L Board Description Ferrite Bead Ferrite Bead Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor


    Original     		PDF DB-55008L-450 PD55008L EXCELDRC35C 560JW 330JW 200JW 270JW 100JW GRM42-6C0G121J50 GRM42-6X7R103 ATC 17 25 ATC 220 capacitor 100b c14 c13 tyco RESISTOR POTENTIOMETER ATC 100A 100JW capacitor 10 pf zener 100B zener 1206 5.1 v

    vishay rf output power transistor

    Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw "RF Power Transistor" 35W amplifiers 600S100
    Text: T1G4003532-FL 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G4003532-FL T1G4003532-FL vishay rf output power transistor tRANSISTOR 2.7 3.1 3.5 GHZ cw "RF Power Transistor" 35W amplifiers 600S100

    Untitled

    Abstract: No abstract text available
    Text: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package


    Original     		PDF NPT2010 NPT2010 NDS-034

    TRANSMISSION LINE

    Abstract: 103k capacitor smt diode b1 w 98 philips zener diode c12 a03tjlb 102J DB-54003L-512 EEVHB1V100P EXCELDRC35C
    Text: DB-54003L-512 BOM Component ID Description B1 Manufacturer Part Code Ferrite Bead PANASONIC EXCELDRC35C B2 Ferrite Bead PANASONIC EXCELDRC35C C1, C2 Capacitor 120 pF 1206 MURATA GRM42-6 COG 121J 50 C3 Capacitor 1 nF 1206 MURATA GRM42-6 COG 102J 50 C4 Capacitor


    Original     		PDF DB-54003L-512 EXCELDRC35C GRM42-6 EEVHB1V100P 331JW 180BW 330JW TRANSMISSION LINE 103k capacitor smt diode b1 w 98 philips zener diode c12 a03tjlb 102J EEVHB1V100P EXCELDRC35C

    XPD55008

    Abstract: No abstract text available
    Text: DB-55008-500 RF POWER amplifier using 1 x PD55008 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 500MHz ■ Supply voltage: 12.5V ■ Output power: 8W ■ Efficiency: 48% - 54% ■ Load mismatch: 20:1


    Original     		PDF DB-55008-500 PD55008 500MHz DB-55008-500 XPD55008

    capacitor 330pF ATC

    Abstract: rf power amplifier circuit by 400-470mhz 3214W-1-103E A03TJ B09TJ BZX284C5V1 DB-54003-470 EXCELDRC35C PD54003 355nH
    Text: DB-54003-470 RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.5V ■ Output power: 3W ■ Efficiency: 50% - 53% ■ Load mismatch: 20:1


    Original     		PDF DB-54003-470 PD54003 470MHz DB-54003-470 capacitor 330pF ATC rf power amplifier circuit by 400-470mhz 3214W-1-103E A03TJ B09TJ BZX284C5V1 EXCELDRC35C PD54003 355nH

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-TDR014V1 Demonstration board based on the PD55008-E for UHF mobile radio Features • Excellent thermal stability ■ Frequency: 400 - 500 MHz ■ Supply voltage: 12.5 V ■ Output power: 8 W ■ Efficiency: 48 % - 54 % ■ Load mismatch: 20:1 ■ BeO-free amplifier


    Original     		PDF STEVAL-TDR014V1 PD55008-E STEVAL-TDR014V1 PD55008-E

    j358

    Abstract: No abstract text available
    Text: T1G4003532-FS 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G4003532-FS T1G4003532-FS j358

    panasonic inductor date code

    Abstract: 3214W-1-103E A03TJ B09TJ BZX284C5V1 EXCELDRC35C PD55008-E capacitor 330pF ATC STEVAL-TDR014V1
    Text: STEVAL-TDR014V1 Demonstration board based on the PD55008-E for UHF mobile radio Features • Excellent thermal stability ■ Frequency: 400 - 500 MHz ■ Supply voltage: 12.5 V ■ Output power: 8 W ■ Efficiency: 48 % - 54 % ■ Load mismatch: 20:1 ■ BeO-free amplifier


    Original     		PDF STEVAL-TDR014V1 PD55008-E STEVAL-TDR014V1 PD55008-E panasonic inductor date code 3214W-1-103E A03TJ B09TJ BZX284C5V1 EXCELDRC35C capacitor 330pF ATC

    Untitled

    Abstract: No abstract text available
    Text: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package


    Original     		PDF NPT2010 NPT2010 NDS-034

    Untitled

    Abstract: No abstract text available
    Text: T2G4003532-FS 30W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4003532-FS T2G4003532-FS TQGaN25

    XMT031B5012

    Abstract: ATC100B5R6
    Text: NPT2022 Preliminary Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Plastic Package


    Original     		PDF NPT2022 NPT2010 50application, NDS-038 XMT031B5012 ATC100B5R6