A/PNP TRANSISTOR 120V 10A Search Results

A/PNP TRANSISTOR 120V 10A Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

A/PNP TRANSISTOR 120V 10A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
PT10m Abstract: A1210 BTA1210J3 Text: CYStech Electronics Corp. Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date :2009.02.04 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1210J3 BVCEO IC RCESAT -120V -10A 270mΩ Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low	Original	C656J3 BTA1210J3 -120V BTA1210J3 O-252 UL94V-0 PT10m A1210	PDF
Tenma Abstract: pnp transistor 1000v philips AA Alkaline battery dimensions Text: Model 72-8170 Analog Volt/Ohm Meter INSTRUCTION MANUAL Tenma Test Equipment www.tenma.com Controls and Functions 1 Zero calibration adjustment (2) Range selector (3) 10A input terminal (4) (+) probe input (5) (–) probe input (6) Transistor input terminals	Original	300mA 20K/volt Tenma pnp transistor 1000v philips AA Alkaline battery dimensions	PDF
200w AUDIO AMPLIFIER Abstract: transistor BDX 65 200w audio power amplifier pnp transistor 120v 10a a/pnp transistor 120v 10a Text: BDX68A BDX68A BDX68B BDX68C SEME LAB PNP DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 PNP Darlington transistors for audio output stages and general amplifier and switching applications.	Original	BDX68A BDX68B BDX68C BDX69, BDX69A, BDX69B, BDX69C. 25ime 300ms, 200w AUDIO AMPLIFIER transistor BDX 65 200w audio power amplifier pnp transistor 120v 10a a/pnp transistor 120v 10a	PDF
120v 10a transistor Abstract: DARLINGTON -5A 100v pnp 2SB955 2SD1126 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -5A	Original	-120V 2SD1126 -10mA -120V, -100V, 120v 10a transistor DARLINGTON -5A 100v pnp 2SB955 2SD1126	PDF
Untitled Abstract: No abstract text available Text: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO	Original	BDX66 -100V -120V O-204AA)	PDF
TRANSISTOR BDX Abstract: pnp 150w darlington transistor to3 package BDX66 BDX66C transistor bdx66 BDX66B TRANSISTOR 150w darlington transistor to3 package BDX66C Transistor BDX66A BDX66B Text: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO	Original	BDX66 -100V -120V O-204AA) TRANSISTOR BDX pnp 150w darlington transistor to3 package BDX66 BDX66C transistor bdx66 BDX66B TRANSISTOR 150w darlington transistor to3 package BDX66C Transistor BDX66A BDX66B	PDF
NPN Transistor 10A 24V Abstract: 120v in 24v 10A OUT power converter IDEC H-14 Q13-Q16 IEC60068-2-30 FL1B-CL1C12 IEC-61131 FL1B-M08B2R2 m08d Text: H www.idec.com/smartrelay Additional Web Resources • New and updated product information • Downloadable software demos & upgrades • Part configuration tool & cross reference • Online stock check & ordering • IDEC field sales & distributor search	Original	Windows95/98/ME/NT/2000/XP 266MHz 128MB 262-IDEC 317-IDEC NPN Transistor 10A 24V 120v in 24v 10A OUT power converter IDEC H-14 Q13-Q16 IEC60068-2-30 FL1B-CL1C12 IEC-61131 FL1B-M08B2R2 m08d	PDF
MJ11015 Abstract: No abstract text available Text: PNP SILICON DARLINGTON TRANSISTOR MJ11015 SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)	Original	MJ11015 -120V MJ11015	PDF
2SC1079 Abstract: 2SB679 transistor 2SC1079 Audio Output Transistor Amplifier Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB679 DESCRIPTION •High Power Dissipation: PC= 100W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications.	Original	2SB679 -120V 2SC1079 -10mA 2SC1079 2SB679 transistor 2SC1079 Audio Output Transistor Amplifier	PDF
pin diagram of ic 4066 Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors Text: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.	Original	MJ11015, MJ11015 MJ11016 pin diagram of ic 4066 ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors	PDF
2SB679 Abstract: 2SC1079 transistor 2SC1079 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB679 DESCRIPTION •High Power Dissipation: PC= 100W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications.	Original	2SB679 -120V 2SC1079 -10mA 2SB679 2SC1079 transistor 2SC1079	PDF
pin diagram of ic 4066 Abstract: ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent Text: MJ11032, 11033 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain: hFE = 1000 Minimum at IC = 25A,	Original	MJ11032, pin diagram of ic 4066 ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent	PDF
200W TRANSISTOR AUDIO AMPLIFIER Abstract: TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier Text: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.	Original	BDX69A BDX69B BDX69C BDX68, BDX68A, BDX68B, BDX68C. 300ms, BDX69" 200W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier	PDF
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN	PDF

MJ11015 Abstract: No abstract text available Text: 1165917 High-current complementary silicon transistors. For use output devices in complementary general purpose amplifier applications. Features: • • • TO-3 High DC current gain - hFE = 1000 (minimum) at IC - 20A dc. Monolithic construction with built-in base emitter shunt resistor.	Original		PDF
13T1 Abstract: No abstract text available Text: OPTEK TECHNOLOGY INC 4flE D • fc^TaSflO 00D 13T1 T ib Product BulletinOTC1550 August 1990 PNP Power Switching Transistor Die ■ OTK ^ 3 ? . ^ 'T -¥ 7 '\y Type 0TC1550 120V, 10A Applications • Inverters • Switching Regulators Through 50 KHz. • Medium Current Motor Driver	OCR Scan	BulletinOTC1550 0TC1550 OTC1900 -500mA, 10MHz OTC1550 2N5003 2N5153, 2N6227 2N6308, 13T1	PDF
2N5003 Abstract: 2N5153 OTC1550 OTC155Q OTC1900 Text: OPTEK T E CH NO LO GY INC Product Bulletin OTC1550 August 1990 4ÔE D • ^TâSÔD OOD13 T1 Tib Hi OTK U M fc K • PNP Power Switching Transistor Die 'T -v i-\y Type 0TC1550 120V, 10A Applications • Inverters • Switching Regulators Through 50 KHz. • Medium Current Motor Driver	OCR Scan	ODD13T1 OTC1550 OTC1900 1550-80L 1550-80H 1550-120L -500mA, 10MHz OTC155Q 2N5003 2N5153 OTC1900	PDF
2N6127 Abstract: Vceo 80V Ic 0.5A 2N5312 2N5318 2N5677 2N5742 2N5744 SDT3101 SDT3129 Text: ^/outran ra y <gT ©Ä¥ÄIL®( Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* * (FORMERLY 63) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)	OCR Scan	4i45mm 203mm) 2N6127 Vceo 80V Ic 0.5A 2N5312 2N5318 2N5677 2N5742 2N5744 SDT3101 SDT3129	PDF
2N3597 Abstract: 2N3599 2N5539 BDY58 SDT8301 SDT8304 SDT8758 74c74 TRANSISTOR TO63 Text: -Ælttron A T T Ä L ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc. NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 86 CHIP N UM BER CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)	OCR Scan	305mm) 2N3597 2N3599 2N5539 BDY58 SDT8301 SDT8304 SDT8758 74c74 TRANSISTOR TO63	PDF
sdt31 Abstract: No abstract text available Text: 8368602 SOL ITRON DEVICES INC 95D 02885 d ËT\| û3kat,DE GDGEÛÛS 1 T- 3 „J&lttren Ä T O [L MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER T~ t~( Devices, Inc. PNP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 63 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum	OCR Scan	203mm) 350pF 350pF 2N5312, 2N5318, 2N5677, 2N5744, 2N5742, 2N6127, SDT3101 sdt31	PDF
120v 10a transistor Abstract: No abstract text available Text: SOLITRON DEVICES INC fib D E \| A3hAb02 D002£7b 0 ~f~ 'T'~ 3 } ~ ° * ELEMENT NUMBER 186 MEDIUM VOLTAGE, FAST SWITCHING NPN E P IT A X IA L/T R IP L E DIFFUSED PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 A Aluminum FO RM ERLY 86	OCR Scan	A3hAb02 305mm) 700pF 700pF 2N3597, 2N3599, 2N5539, SDT8301 120v 10a transistor	PDF
74c74 Abstract: No abstract text available Text: -JSntnm [p[M>}[p yj Tr ©ÄTTÄIL ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* * (FORMERLY 86) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)	OCR Scan	305mm) 74c74	PDF
120v 10a transistor Abstract: 2N4399 2N4398 2N5853 2N5883 2N5884 2N6437 2N6438 NPN Transistor 10A 100V npn 120v 10a transistor Text: ^atitran [?[M>[B y Tr © ä ? ä il Devices, Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)	OCR Scan	4i45mm 203mm) 2N4398, 2N4399, 2N5853, 2N5883, 2N5884. 2N6437, 2N6438 120v 10a transistor 2N4399 2N4398 2N5853 2N5883 2N5884 2N6437 2N6438 NPN Transistor 10A 100V npn 120v 10a transistor	PDF
Untitled Abstract: No abstract text available Text: 8368602 S OL I TRON DEVICES I NC TS 95D 02887 D D E \| û 3 b û t , D 2 GODSfifl? S T ~ MT^iL© _ "_ Z - Devices, Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER PNP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION	OCR Scan	203mm) 2N4398, 2N4399, 2N5853, 2N5883, 2N5884, 2N6437, 2N6438	PDF

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A/PNP TRANSISTOR 120V 10A Search Results

A/PNP TRANSISTOR 120V 10A Result Highlights (5)

A/PNP TRANSISTOR 120V 10A Datasheets Context Search

PT10m

Tenma

200w AUDIO AMPLIFIER

120v 10a transistor

Untitled

TRANSISTOR BDX

NPN Transistor 10A 24V

MJ11015

2SC1079

pin diagram of ic 4066

2SB679

pin diagram of ic 4066

200W TRANSISTOR AUDIO AMPLIFIER

Diode 400V 5A

MJ11015

13T1

2N5003

2N6127

2N3597

sdt31

120v 10a transistor

74c74

120v 10a transistor

Untitled