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Microchip Technology Inc 2N5312 POWER BJT
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DigiKey	2N5312	Bulk			100	1 - 10 - 100 $449.8815 1000 $449.8815 10000 $449.8815	Buy Now
Avnet Americas	2N5312	Bulk		36 Weeks	100	1 $452.1818 10 $452.1818 100 $421.75577 1000 $437.7182 10000 $437.7182	Buy Now
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Future Electronics	2N5312				100	1 - 10 - 100 $480.64 1000 $480.64 10000 $480.64	Buy Now

Microchip Technology Inc	2N5312			36 Weeks		1 $484.48 10 $484.48 100 $484.48 1000 $484.48 10000 $484.48	Buy Now
Onlinecomponents.com	2N5312					1 - 10 - 100 $438.62 1000 $438.62 10000 $438.62	Buy Now
NAC	2N5312				1	1 $461.41 10 $461.41 100 $432.57 1000 $432.57 10000 $432.57	Buy Now
Master Electronics	2N5312					1 - 10 - 100 $438.62 1000 $438.62 10000 $438.62	Buy Now

2N5312 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5312	On Semiconductor	20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON40-0-0 VOLTS200 WATTS	Original	PDF
2N5312	API Electronics	Short form transistor data	Short Form	PDF
2N5312	General Diode	Transistor Selection Guide	Scan	PDF
2N5312	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N5312	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N5312	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N5312	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N5312	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N5312	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N5312	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2N5312	Pirgo Electronics	Low Frequency Silicon Power Transistor	Scan	PDF
2N5312	PPC Products	Transistor Short Form Data	Scan	PDF
2N5312	Semico	PNP Silicon Power Transistors / Low Level Amplifiers	Scan	PDF
2N5312	Semitronics	Silicon Power Transistors	Scan	PDF

2N5312	Solidev Semiconductors	Solid State Products (Transistor Guide)	Scan	PDF
2N5312	Solitron Devices	Planar Power Transistor	Scan	PDF

2N5312 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TO61 Abstract: 2N5007 2N5009 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5386 Text: Device Type VCEO hFE V Min/Max @ I C (A) 2N5007 2N5009 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5386 2N5621 2N5623 2N5625 2N5627 2N5677 2N5737 2N5738 2N5739 2N5740 2N5853 2N6127 2N6248 SDT3105 SDT3106 SDT3107 SDT3108 SDT3109 SDT3115 SDT3116 SDT3117 SDT3118	Original	PDF	2N5007 2N5009 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5386 2N5621 TO61 2N5007 2N5009 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5386
T100C Abstract: No abstract text available Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE\| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1	Original	PDF	A4403SS DDDD101 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 T100C
2N5854 Abstract: No abstract text available Text: 8440355 SPACE 89C~T 011TJ POWER'~£~LECTRONTCS~ D < 3 2 . M i DE\|ALIMOBSS •ODDIID i \| SPACE POWER ELECTRONICS Hi-Rel PLANAR P O W E R — 1 0 AMP PtSP f^ .470 .500 MAX -< NOTE 2 .050MAX. NOTE 2 .260 7340 L i .080 .076 .360 M I N . - .968 ~ .962 I , r .670	Original	PDF	011TJ 050MAX. O-111 2N3789 2N3790 2N3791 2N3792 2N5003 2N5005 2N5007 2N5854
2N3340 Abstract: 2N3581 2N2520 2N5609 2N5003 2N5005 2N5287 2N5312 2N5316 2N5607 Text: 8134693 SEMICOA MD ] e \| 0134t. ^ □□QDIE'J 1 \| _,T :<5 7 - 0 \ PNP SILICON POWER TRANSISTORS Cont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Type No. PNP Dissipation @25°C (Case) Watts 2N5287 2N5003 2N5005 2N5607 2N5609 2N5316 2N5312	OCR Scan	PDF	2N5287 2N5003 2N5005 2N5607 2N5609 2N5316 2N5312 2N6186 2N6187 2N5853 2N3340 2N3581 2N2520 2N5609
FA 23843 Abstract: 23843 23842 IC 23842 FA2384323843 23921 2N6246 23919 Text: Micmsemi PNP Transistors Part Number PNP 2N5312 2N586S 2N5677 2N5737 2N5316 2N5318 2NS738 2N5314 2NS872 2N6318 2N5007 2N5009 2N6594 2N5741 2N5742 2N5871 2N6317 2N5853 2N7369 2N5621 2N5623 2N5625 2N5290 2N5291 2N5627 2N6127 2N6246 2N6469 2N6247 2N6248 2N6226	OCR Scan	PDF	O-254 PNP-10 FA 23843 23843 23842 IC 23842 FA2384323843 23921 2N6246 23919
KSD 166 Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801 Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5	OCR Scan	PDF	MT-13 KSD 166 LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
AL102 ATES Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible	OCR Scan	PDF	Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
2n2301 Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815 Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö \| 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74	OCR Scan	PDF	2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
2NS604 Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302 Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75	OCR Scan	PDF	2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
2N5286 Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562 Text: SOLITRON DEVICES INC ^ D eT\| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT	OCR Scan	PDF	2N2657 2N2658 2N2877 O-111 2N2878 2N2879 2N2880 2N5286 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
2N5314 Abstract: 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 Text: A P I EL ECT RONI CS 00^3592 A P I I NC 2b ELECTRONICS d F \| d D 4 3 S cIS □□□Q E3S INC 26C & l~ °~ T :- '3 3 - 0 { 00235 COLLECTOR CURRENT = 20 AMPS NPN TYPES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772 JAN	OCR Scan	PDF	0CH3592 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N5314
2N3789 Abstract: 2N3790 2N3791 2N3792 2N5007 2N5009 2N5290 2N5291 2N5312 SDT7909 Text: 37 SILICON POWER TRANSISTORS CUR R E N T G A IN S A T U R A T IO I M VO LTA G ES D TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO v hFE M IN . I M A X. V GE V CE s V BE(s) V I V C A I B A V A 5.0 5.0 5.0 5.0 .50 .50 1.20 1.20 2.0 2.0 .200 .200 90 90 180 2.0	OCR Scan	PDF	SDT7909 SDT7910 2N3789 2N3790 2N3791 2N3792 2N5007 O-61-1 2N5009 2N5290 2N5291 2N5312
SDT7201 Abstract: 2N5740 SDT3109 2n5290 2N5737 SDT7612 Text: 35 SILICON POWER TRANSISTORS CURREIV T G A IN SATURATION J VO LTA G ES ë> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M AX. V CE *C V CE s V BE(s) V I V 'c . A 'b I A U A 5.0 5.0 5.0 5.0 5.0 5.0 .60 .60 .60 1.50 1.50 1.50 5.0 5.0 5.0 .500	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: Contran Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * FORMERLY 63 CONTACT METALLIZATION B a se and emitter: > 50.000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilv er" also available)	OCR Scan	PDF	203mm) 350pF 350pF 2N5312, 2N5318, 2N5677, 2N5744, 2N5742,

2N1936 Abstract: 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 Text: A P I ELECTRONICS 00^3592 A P I I NC ' at ELECTRONICS dF § D D 4 3 S cIS INC 26C □□□05BS ñ l~ V ~ T '~ ‘3 3 - 0 i 00235 CO LLECTO R CURRENT = 20 AM PS NPN TY PES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772	OCR Scan	PDF	DD43ScIS D-7I33LOI 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598
Transistors 2n551 Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444 Text: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts	OCR Scan	PDF	2N339 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A Transistors 2n551 Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
AP1152 Abstract: 2N4211 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 Text: A P I ELECTRONICS 00^3592 A P I I NC ' at ELECTRONICS dF § D D 4 3 S cIS INC 26C □□□05BS ñ l~ V ~ T '~ ‘3 3 - 0 i 00235 CO LLECTO R CURRENT = 20 AM PS NPN TY PES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772	OCR Scan	PDF	DD43ScIS D-7I33LOI 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 AP1152 2N4211
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan	PDF
RCA SK CROSS-REFERENCE Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1 Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered	OCR Scan	PDF
2N2222A mps Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304 Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71	OCR Scan	PDF	1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
2N3920 Abstract: 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307 Text: £ ^ I jemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 silicon transistors cont-d silicon small signal transistors choppers Type Polarity Power Dissipation @ 25°C mw tlFE @ lc Tj (°C) BVcbo (volts) HILL (volts) Vet (SAT @ lc (Min.)	OCR Scan	PDF	2N941* 2N942* 2N943* 2N944* 2N945* 2N946* 2N1676 2N1677 2N1917* 2N1918* 2N3920 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307
transistor c2060 Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,	OCR Scan	PDF	AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
sdt31 Abstract: No abstract text available Text: 8368602 SOL ITRON DEVICES INC 95D 02885 d ËT\| û3kat,DE GDGEÛÛS 1 T- 3 „J&lttren Ä T O [L MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER T~ t~( Devices, Inc. PNP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 63 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum	OCR Scan	PDF	203mm) 350pF 350pF 2N5312, 2N5318, 2N5677, 2N5744, 2N5742, 2N6127, SDT3101 sdt31

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2N5312 Search Results

2N5312 Price and Stock

Microchip Technology Inc 2N5312

2N5312 Datasheets (16)

2N5312 Datasheets Context Search

TO61

T100C

2N5854

2N3340

FA 23843

KSD 166

AL102 ATES

2n2301

2NS604

2N5286

2N5314

2N3789

SDT7201

Untitled

2N1936

Transistors 2n551

AP1152

MC2259

RCA SK CROSS-REFERENCE

2N2222A mps

2N3920

transistor c2060

y51 h 120c

sdt31