ZBD857 Search Results

ZBD857 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ZBD857		Zetex Semiconductors	NPN SILICON PLANAR POWER TRANSISTOR		Original	PDF

ZBD857 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ZBD857 Abstract: V3003-50 Text: ZBD857 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 330 Collector-Emitter Breakdown Voltag V(BR)CER Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. 475 V	Original	PDF	ZBD857 100mA, 100MHz 250mA, 500mA, ZBD857 V3003-50
Untitled Abstract: No abstract text available Text: NPN SILICON PLANAR POWER TRANSISTOR PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * * * Fast switching Guaranteed hFE specified up to 2 A m p s Low collector-emitter saturation voltage ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L VALUE UNIT Collector-Base Voltage	OCR Scan	PDF	cH7Q57ß 001G35S
ZTX752 equivalent Abstract: transistor 42-10a data BC369 FXTA92 BSS98 Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request	OCR Scan	PDF	ZVP2106C ZVP2110A ZVP2110C ZVP2120A ZTX788B ZVP2120C ZVP3306A ZVP3310A ZVP4105A 2110C ZTX752 equivalent transistor 42-10a data BC369 FXTA92 BSS98
300V transistor npn 2a Abstract: No abstract text available Text: NPN SILICON PLANAR POWER TRANSISTOR PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * Fa st sw itc h in g * G uaranteed h FE specified up to 2 A m p s * L o w collector-em itter saturation v o lta ge T0126 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L	OCR Scan	PDF	T0126 300ns. 300V transistor npn 2a