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    UN221N Search Results

    UN221N Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UN221N Panasonic TRANS DIGITAL BJT NPN 50V 100MA 3MINI3-G1 Original PDF
    UN221N Panasonic Silicon NPN epitaxial planer transistor Original PDF

    UN221N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UN1119

    Abstract: UN221N UNR1119 UNR221N XP04286
    Text: Composite Transistors XP04286 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR221N(UN221N)+UNR1119(UN1119) • Absolute Maximum Ratings Parameter 0 to 0.1


    Original     		XP04286 UNR221N UN221N) UNR1119 UN1119) UN1119 UN221N XP04286 PDF

    UN211N

    Abstract: UN221N XP0431N
    Text: Composite Transistors XP0431N Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● UN221N+UN211N • Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings


    Original     		XP0431N UN221N UN211N UN211N XP0431N PDF

    UN211N

    Abstract: UN221N XP0431N
    Text: Composite Transistors XP0431N Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● UN221N+UN211N • Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings


    Original     		XP0431N UN221N UN211N UN211N XP0431N PDF

    UN221N

    Abstract: XP0121N
    Text: Composite Transistors XP0121N Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN221N x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02


    Original     		XP0121N UN221N UN221N XP0121N PDF

    UN221N

    Abstract: UNR221N XP0121N
    Text: Composite Transistors XP0121N Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR221N UN221N x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element


    Original     		XP0121N UNR221N UN221N) UN221N XP0121N PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent PDF

    transistors c 2216

    Abstract: UN2216 un2211 221Z 221D UN2213 221E UN2212 UN2214 UN2215
    Text: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor For digital circuits +0.25 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05


    Original     		E/221F/221K/221L/221M/221N/221T/221V/221Z UN2211 UN2212 UN2213 UN2214 UN2215 UN2216 UN2217 UN2218 transistors c 2216 UN2216 un2211 221Z 221D UN2213 221E UN2212 UN2214 UN2215 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN0421N XN421N Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 1.1+0.2 –0.1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO


    Original     		XN0421N XN421N) PDF

    UP0431N

    Abstract: UN211N UN221N UNR211N UNR221N
    Text: Composite Transistors UP0431N Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 4 • Features ■ Basic Part Number of Element 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package


    Original     		UP0431N UP0431N UN211N UN221N UNR211N UNR221N PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    UNR2210

    Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou


    Original     		2002/95/EC) UNR221x UN221x UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219 PDF

    UNR2210

    Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and


    Original     		2002/95/EC) UNR221x UN221x UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219 PDF

    UNR2210

    Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and


    Original     		2002/95/EC) UNR221x UN221x UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219 PDF

    XN421N

    Abstract: UN221N UNR221N XN0421N
    Text: Composite Transistors XN0421N XN421N Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 6 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 0.4±0.2 1 (0.65) 3 5˚ ue pl d in


    Original     		XN0421N XN421N) XN421N UN221N UNR221N XN0421N PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    XP04286

    Abstract: UN1119 UN221N
    Text: Composite Transistors XP04286 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage


    Original     		XP04286 UN221N UN1119 XP04286 UN1119 PDF

    UN221N

    Abstract: UNR221N XN0421N XN421N
    Text: Composite Transistors XN0421N XN421N Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 3 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage


    Original     		XN0421N XN421N) UNR221N UN221N) UN221N XN0421N XN421N PDF

    UN221N

    Abstract: MA1043 UNR221N XN0421N XN421N
    Text: Composite Transistors XN0421N XN421N Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package


    Original     		XN0421N XN421N) UN221N MA1043 UNR221N XN0421N XN421N PDF

    UN221N

    Abstract: UNR221N XN0421N XN421N
    Text: Composite Transistors XN0421N XN421N Silicon NPN epitaxial planer transistor ● 3 2 0.4±0.2 5˚ Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3


    Original     		XN0421N XN421N) UNR221N UN221N) UN221N XN0421N XN421N PDF

    221L

    Abstract: UN22XX UNR2218 17 25 04 UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215
    Text: Transistors with built-in Resistor UNR22XX Series UN22XX Series Silicon NPN epitaxial planer transistor Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Costs can be reduced through downsizing of the equipment and


    Original     		UNR22XX UN22XX 221L UNR2218 17 25 04 UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)


    Original     		2002/95/EC) UNR221x UN221x PDF

    D1915

    Abstract: D1915 Transistors d1915f TRANSISTOR D1915 D1915 transistor XN1111 mini type (D7)
    Text: Transistors Selection Guide by Applications and Functions • 5 Pin S Mini Type (D6) *5 Pin Mini Type (D11) *6 Pin S Mini Type (D7) *6 Pin Mini Type (D12) Package Transistor, FET A Preliminary # Resistor Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)


    OCR Scan     		XN1111 XP1111 XN1112 XP1112 XN1113 XP1113 XN1114 XP1114 XN1115 XP1115 D1915 D1915 Transistors d1915f TRANSISTOR D1915 D1915 transistor mini type (D7) PDF