UN1119
Abstract: UN221N UNR1119 UNR221N XP04286
Text: Composite Transistors XP04286 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR221N(UN221N)+UNR1119(UN1119) • Absolute Maximum Ratings Parameter 0 to 0.1
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XP04286
UNR221N
UN221N)
UNR1119
UN1119)
UN1119
UN221N
XP04286
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UN211N
Abstract: UN221N XP0431N
Text: Composite Transistors XP0431N Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● UN221N+UN211N • Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings
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XP0431N
UN221N
UN211N
UN211N
XP0431N
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UN211N
Abstract: UN221N XP0431N
Text: Composite Transistors XP0431N Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● UN221N+UN211N • Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings
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XP0431N
UN221N
UN211N
UN211N
XP0431N
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UN221N
Abstract: XP0121N
Text: Composite Transistors XP0121N Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN221N x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02
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XP0121N
UN221N
UN221N
XP0121N
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UN221N
Abstract: UNR221N XP0121N
Text: Composite Transistors XP0121N Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR221N UN221N x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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XP0121N
UNR221N
UN221N)
UN221N
XP0121N
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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transistors c 2216
Abstract: UN2216 un2211 221Z 221D UN2213 221E UN2212 UN2214 UN2215
Text: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor For digital circuits +0.25 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05
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E/221F/221K/221L/221M/221N/221T/221V/221Z
UN2211
UN2212
UN2213
UN2214
UN2215
UN2216
UN2217
UN2218
transistors c 2216
UN2216
un2211
221Z
221D
UN2213
221E
UN2212
UN2214
UN2215
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN0421N XN421N Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 1.1+0.2 –0.1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO
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XN0421N
XN421N)
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UP0431N
Abstract: UN211N UN221N UNR211N UNR221N
Text: Composite Transistors UP0431N Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 4 • Features ■ Basic Part Number of Element 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package
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UP0431N
UP0431N
UN211N
UN221N
UNR211N
UNR221N
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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UNR2210
Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou
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2002/95/EC)
UNR221x
UN221x
UNR2210
UNR2211
UNR2212
UNR2213
UNR2214
UNR2215
UNR2216
UNR2217
UNR2218
UNR2219
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UNR2210
Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and
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2002/95/EC)
UNR221x
UN221x
UNR2210
UNR2211
UNR2212
UNR2213
UNR2214
UNR2215
UNR2216
UNR2217
UNR2218
UNR2219
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UNR2210
Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and
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2002/95/EC)
UNR221x
UN221x
UNR2210
UNR2211
UNR2212
UNR2213
UNR2214
UNR2215
UNR2216
UNR2217
UNR2218
UNR2219
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XN421N
Abstract: UN221N UNR221N XN0421N
Text: Composite Transistors XN0421N XN421N Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 6 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 0.4±0.2 1 (0.65) 3 5˚ ue pl d in
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XN0421N
XN421N)
XN421N
UN221N
UNR221N
XN0421N
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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XP04286
Abstract: UN1119 UN221N
Text: Composite Transistors XP04286 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage
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XP04286
UN221N
UN1119
XP04286
UN1119
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UN221N
Abstract: UNR221N XN0421N XN421N
Text: Composite Transistors XN0421N XN421N Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 3 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage
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XN0421N
XN421N)
UNR221N
UN221N)
UN221N
XN0421N
XN421N
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UN221N
Abstract: MA1043 UNR221N XN0421N XN421N
Text: Composite Transistors XN0421N XN421N Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package
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XN0421N
XN421N)
UN221N
MA1043
UNR221N
XN0421N
XN421N
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UN221N
Abstract: UNR221N XN0421N XN421N
Text: Composite Transistors XN0421N XN421N Silicon NPN epitaxial planer transistor ● 3 2 0.4±0.2 5˚ Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3
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XN0421N
XN421N)
UNR221N
UN221N)
UN221N
XN0421N
XN421N
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221L
Abstract: UN22XX UNR2218 17 25 04 UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215
Text: Transistors with built-in Resistor UNR22XX Series UN22XX Series Silicon NPN epitaxial planer transistor Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Costs can be reduced through downsizing of the equipment and
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UNR22XX
UN22XX
221L
UNR2218
17 25 04
UNR2210
UNR2211
UNR2212
UNR2213
UNR2214
UNR2215
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)
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2002/95/EC)
UNR221x
UN221x
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D1915
Abstract: D1915 Transistors d1915f TRANSISTOR D1915 D1915 transistor XN1111 mini type (D7)
Text: Transistors Selection Guide by Applications and Functions • 5 Pin S Mini Type (D6) *5 Pin Mini Type (D11) *6 Pin S Mini Type (D7) *6 Pin Mini Type (D12) Package Transistor, FET A Preliminary # Resistor Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)
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OCR Scan
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XN1111
XP1111
XN1112
XP1112
XN1113
XP1113
XN1114
XP1114
XN1115
XP1115
D1915
D1915 Transistors
d1915f
TRANSISTOR D1915
D1915 transistor
mini type (D7)
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