UN1116 Search Results

UN1116 Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
UN1116	Panasonic	Silicon PNP epitaxial planer transistor	Original	PDF
UN1116	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
UN1116	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
UN1116Q	Panasonic	TRANS GP BJT PNP 50V 0.1A 3M	Original	PDF
UN1116-Q	Panasonic	Silicon PNP epitaxial planer transistor	Original	PDF
UN1116R	Panasonic	TRANS GP BJT PNP 50V 0.1A 3M	Original	PDF
UN1116S	Panasonic	TRANS GP BJT PNP 50V 0.1A 3M	Original	PDF

UN1116 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
UN1116 Abstract: UNR1116 XP04116 XP4116 Text: Composite Transistors XP04116 XP4116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1116(UN1116) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage	Original	XP04116 XP4116) UNR1116 UN1116) UN1116 XP04116 XP4116	PDF
UN1116 Abstract: UNR1116 XP01116 XP1116 Text: Composite Transistors XP01116 XP1116 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1116(UN1116 )x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element	Original	XP01116 XP1116) UNR1116 UN1116 UN1116 XP01116 XP1116	PDF
UN1116 Abstract: XP4116 Text: Composite Transistors XP4116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1116 x 2 elements • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage	Original	XP4116 UN1116 UN1116 XP4116	PDF
UN1116 Abstract: XP1116 Text: Composite Transistors XP1116 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN1116 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02	Original	XP1116 UN1116 UN1116 XP1116	PDF
UN1116 Abstract: XN1116 Text: Composite Transistors XN1116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1116 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element	Original	XN1116 UN1116 UN1116 XN1116	PDF
UN1116 Abstract: UN1216 XP4316 Text: Composite Transistors XP4316 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● UN1216+UN1116 • Absolute Maximum Ratings Parameter (Ta=25˚C) Ratings Unit Collector to base voltage	Original	XP4316 UN1216 UN1116 UN1116 XP4316	PDF
UN1116 Abstract: UNR1116 XP06116 XP6116 Text: Composite Transistors XP06116 XP6116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1116(UN1116) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter	Original	XP06116 XP6116) UNR1116 UN1116) UN1116 XP06116 XP6116	PDF
UN1116 Abstract: UNR1116 XN01116 XN1116 Text: Composite Transistors XN01116 XN1116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1116(UN1116) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element	Original	XN01116 XN1116) UNR1116 UN1116) UN1116 XN01116 XN1116	PDF
UN1116 Abstract: XP6116 Text: Composite Transistors XP6116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1116 x 2 elements • Absolute Maximum Ratings 1 : Emitter Tr1 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings	Original	XP6116 UN1116 UN1116 XP6116	PDF
UN1116 Abstract: UN1216 UNR1116 UNR1216 XP04316 XP4316 Text: Composite Transistors XP04316 XP4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1216(UN1216) + UNR1116(UN1116) • Absolute Maximum Ratings Parameter	Original	XP04316 XP4316) UNR1216 UN1216) UNR1116 UN1116) UN1116 UN1216 XP04316 XP4316	PDF
Untitled Abstract: No abstract text available Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts	Original	UNR111x UN111x UNR1110 UNR1111 UNR1112	PDF
UN1116 Abstract: UNR1116 XN06116 XN6116 Text: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol	Original	XN06116 XN6116) UN1116 UNR1116 XN06116 XN6116	PDF
UN1114 Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118 Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●	Original	111D/111E/111F/111H/111L UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 UN1119 UN1114 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118	PDF
UN1116 Abstract: UNR1116 XN04116 XN4116 Text: Composite Transistors XN04116 XN4116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings +0.1 +0.1 0 to 0.05 0.4±0.2 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage	Original	XN04116 XN4116) UN1116 UNR1116 XN04116 XN4116	PDF

UN1116 Abstract: UNR1116 XN06116 XN6116 Text: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planer transistor ● 3 2 0.4±0.2 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3	Original	XN06116 XN6116) UNR1116 UN1116) UN1116 XN06116 XN6116	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
UN1116 Abstract: UN1216 UNR1116 UNR1216 XN04316 XN4316 Text: Composite Transistors XN04316 XN4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) ● 3 2 0.4±0.2 5˚ Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.	Original	XN04316 XN4316) UNR1216 UN1216) UNR1116 UN1116) UN1116 UN1216 XN04316 XN4316	PDF
UN1116 Abstract: UN1216 XN4316 Text: Composite Transistors XN4316 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO	Original	XN4316 UN1216 UN1116 UN1116 XN4316	PDF
UN1116 Abstract: XN6116 Text: Composite Transistors XN6116 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Rating Collector to emitter voltage of element Collector current Ratings Unit VCBO –50 V –50 V –100 mA Total power dissipation	Original	XN6116 UN1116 XN6116	PDF
UNR1110 Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ	Original	UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119	PDF
UN1116 Abstract: UN1216 UNR1116 UNR1216 XN04316 XN4316 Text: Composite Transistors XN04316 XN4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter 3 0.4±0.2 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)	Original	XN04316 XN4316) UNR1216 UN1216) UNR1116 UN1116) UN1116 UN1216 XN04316 XN4316	PDF
transistor a2160 Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124	OCR Scan	N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K	PDF
3866S Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515 Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series	OCR Scan	1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515	PDF
UN7000 Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211 Text: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )	OCR Scan	UN1000 600mW UN2000 200mW) N2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN7000 UN8000 UN9110 UNR921CJ UN1219 un4115 un1211	PDF

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UN1116 Datasheets (7)

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Untitled

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SSP35n03

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UNR1110

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transistor a2160

3866S

UN7000