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    SIR438DP Price and Stock

    Vishay Siliconix SIR438DP-T1-GE3

    MOSFET N-CH 25V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR438DP-T1-GE3 Digi-Reel 261 1
    • 1 $2.69
    • 10 $1.734
    • 100 $2.69
    • 1000 $0.8835
    • 10000 $0.8835
    		Buy Now
    SIR438DP-T1-GE3 Cut Tape 261 1
    • 1 $2.69
    • 10 $1.734
    • 100 $2.69
    • 1000 $0.8835
    • 10000 $0.8835
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    SIR438DP-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.7875
    		Buy Now

    Vishay Intertechnologies SIR438DP-T1-GE3

    Trans MOSFET N-CH 25V 40A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR438DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR438DP-T1-GE3 Reel 17 Weeks 3,000
    • 1 -
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    • 10000 $0.77491
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    Mouser Electronics SIR438DP-T1-GE3 3,565
    • 1 $2.48
    • 10 $1.65
    • 100 $1.15
    • 1000 $1.05
    • 10000 $0.787
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    Verical SIR438DP-T1-GE3 3,000 3,000
    • 1 -
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    • 10000 $0.8704
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    SIR438DP-T1-GE3 270 29
    • 1 -
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    • 100 $0.2121
    • 1000 $0.2121
    • 10000 $0.2121
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    Arrow Electronics SIR438DP-T1-GE3 3,000 63 Weeks 3,000
    • 1 -
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    • 10000 $0.8627
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    SIR438DP-T1-GE3 Cut Strips 270 17 Weeks 1
    • 1 $0.2265
    • 10 $0.2229
    • 100 $0.2157
    • 1000 $0.2121
    • 10000 $0.2121
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    Newark SIR438DP-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.807
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    SIR438DP-T1-GE3 Cut Tape 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.18
    • 10000 $1.18
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    TTI SIR438DP-T1-GE3 Reel 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.79
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    TME SIR438DP-T1-GE3 3,000
    • 1 -
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    • 10000 $1.3
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    EBV Elektronik SIR438DP-T1-GE3 18 Weeks 3,000
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    Vishay Siliconix SIR438DPT1GE3

    Power Field-Effect Transistor, 40A I(D), 25V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIR438DPT1GE3 200
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    Vishay Huntington SIR438DP-T1-GE3

    MOSFET N-CH 25V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIR438DP-T1-GE3 16,900
    • 1 -
    • 10 -
    • 100 $0.566
    • 1000 $0.377
    • 10000 $0.377
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    SIR438DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR438DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 60A PPAK 8SOIC Original PDF

    SIR438DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SiR438DP-T1-GE3

    Abstract: SiR438DP
    Text: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR438DP SiR438DP-T1-GE3 18-Jul-08

    SiR438DP

    Abstract: No abstract text available
    Text: SPICE Device Model SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF SiR438DP 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR438DP SiR438DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    A10570

    Abstract: No abstract text available
    Text: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR438DP SiR438DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 A10570

    69051

    Abstract: 8326 AN609
    Text: SiR438DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF SiR438DP AN609, 04-Nov-08 69051 8326 AN609

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR438DP SiR438DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR438DP www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		PDF SiR438DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiR438DP-T1-GE3

    Abstract: A-6448
    Text: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR438DP SiR438DP-T1-GE3 11-Mar-11 A-6448

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR438DP SiR438DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR438DP SiR438DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    4TPF470ML

    Abstract: ltc3852 50HVP56M LT 3852 c 3852 LT3808 SUNCon me vitec LTC3852E LTC3852EUDD
    Text: LTC3852 Low Input Voltage, Synchronous Step-Down DC/DC Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n Charge Pump Input Range: 2.7V to 5.5V Controller Input Range: 4V to 38V Integrated Charge Pump Provides 5V Gate Drive to Logic Level MOSFETs


    Original     		PDF LTC3852 250kHz 750kHz 24-Lead LT3808 LTC3809/LTC3809-1 LTC3809-1) LTC3822/LTC3822-1 LTC3836 3852f 4TPF470ML ltc3852 50HVP56M LT 3852 c 3852 LT3808 SUNCon me vitec LTC3852E LTC3852EUDD

    si7738

    Abstract: No abstract text available
    Text: Application Note 1628 Author: Jiong Huang ISL6726EVAL1Z Current Mode Active Clamp Forward with SR for Medium Power Applications Description Key Features The ISL6726EVAL1Z board is a 48V input to 5V output DC/DC converter that can output current up to 40A. This application


    Original     		PDF ISL6726EVAL1Z ISL6726, 600mV 530mV 540mV AN1628 si7738

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating


    Original     		PDF VMN-PT0105-1007

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477