IRFR120 siliconix
Abstract: IRFR120 SiHFR120 IRFR120PBF IRFU120 SiHFR120-E3 marking 31 77 diode
Text: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
|
PDF
|
IRFR120,
IRFU120,
SiHFR120
SiHFU120
O-252)
O-251)
IRFR120 siliconix
IRFR120
IRFR120PBF
IRFU120
SiHFR120-E3
marking 31 77 diode
|
Untitled
Abstract: No abstract text available
Text: IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single DESCRIPTION
|
Original
|
PDF
|
IRFR120,
IRFU120,
SiHFR120
SiHFU120
O-252)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
IRFR120,
IRFU120,
SiHFR120
SiHFU120
2002/95/EC
O-252)
|
IRFR120
Abstract: SiHFR120 IRFU120 SiHFR120-E3 IRFU120 vishay
Text: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 16 • Surface Mount (IRFR120/SiHFR120) Qgs (nC) 4.4 • Straight Lead (IRFU120/SiHFU120)
|
Original
|
PDF
|
IRFR120,
IRFU120,
SiHFR120
SiHFU120
IRFU120/SiHFU120)
IRFR120/SiHFR120)
O-252)
O-251)
18-Jul-08
IRFR120
IRFU120
SiHFR120-E3
IRFU120 vishay
|
IRFR120PBF
Abstract: IRFR120 IRFU120 SiHFR120 SiHFR120-E3
Text: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
IRFR120,
IRFU120,
SiHFR120
SiHFU120
O-252)
O-251)
IRFR120PBF
IRFR120
IRFU120
SiHFR120-E3
|
Untitled
Abstract: No abstract text available
Text: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
IRFR120,
IRFU120,
SiHFR120
SiHFU120
2002/95/EC
O-252)
|
Untitled
Abstract: No abstract text available
Text: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
IRFR120,
IRFU120,
SiHFR120
SiHFU120
2002/95/EC
O-252)
|
irfr120
Abstract: IRFU120
Text: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 16 • Surface Mount (IRFR120/SiHFR120) Qgs (nC) 4.4 • Straight Lead (IRFU120/SiHFU120)
|
Original
|
PDF
|
IRFR120,
IRFU120,
SiHFR120
SiHFU120
IRFR120/SiHFR120)
IRFU120/SiHFU120)
O-252)
O-251)
12-Mar-07
irfr120
IRFU120
|
Untitled
Abstract: No abstract text available
Text: IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single DESCRIPTION
|
Original
|
PDF
|
IRFR120,
IRFU120,
SiHFR120
SiHFU120
2002/95/EC.
2002/95/EC
|
Untitled
Abstract: No abstract text available
Text: SiHFR120_RC, SiHFU120_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
PDF
|
SiHFR120
SiHFU120
AN609,
CONFIGUR10
5050m
5629m
1563u
0451m
|
Untitled
Abstract: No abstract text available
Text: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D • Halogen-free According to IEC 61249-2-21 Definition
|
Original
|
PDF
|
IRFR120,
IRFU120,
SiHFR120
SiHFU120
2002/95/EC
O-252)
|