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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFIBC30G, SiHFIBC30G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFIBC30G_RC, SiHFIBC30G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	IRFIBC30G SiHFIBC30G AN609, 21-May-10
IRFIBC30G Abstract: SiHFIBC30G SiHFIBC30G-E3 Text: IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFIBC30G, SiHFIBC30G O-220 11-Mar-11 IRFIBC30G SiHFIBC30G-E3
SiHFIBC30G Abstract: No abstract text available Text: IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFIBC30G, SiHFIBC30G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
IRFIBC30G Abstract: IRFIBC30G equivalent SiHFIBC30G SiHFIBC30G-E3 Text: IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFIBC30G, SiHFIBC30G O-220 18-Jul-08 IRFIBC30G IRFIBC30G equivalent SiHFIBC30G-E3
IRFIBC30G equivalent Abstract: IRFIBC30G SiHFIBC30G SiHFIBC30G-E3 Text: IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFIBC30G, SiHFIBC30G O-220 18-Jul-08 IRFIBC30G equivalent IRFIBC30G SiHFIBC30G-E3
IRFIBC30G Abstract: No abstract text available Text: IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFIBC30G, SiHFIBC30G O-220 12-Mar-07 IRFIBC30G