Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIHFB20N50K Search Results

    SF Impression Pixel

    SIHFB20N50K Price and Stock

    Vishay Siliconix SIHFB20N50K-E3

    MOSFET N-CH 500V 20A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHFB20N50K-E3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.7525
    • 10000 $2.7525
    		Buy Now

    SIHFB20N50K Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHFB20N50K-E3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 20A TO220AB Original PDF

    SIHFB20N50K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFB20N50K

    Abstract: SiHFB20N50K SiHFB20N50K-E3
    Text: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFB20N50K, SiHFB20N50K O-220 2002/95/EC 18-Jul-08 IRFB20N50K SiHFB20N50K-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFB20N50K, SiHFB20N50K 2002/95/EC O-220 O-220 IRFB20N50KPbF SiHFB20N50hay 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFB20N50K, SiHFB20N50K O-220 O-220 IRFB20N50KPbF SiHFB20N50K-E3 IRFB20N50merchantability, 12-Mar-07 PDF

    IRFB20N50KPbF

    Abstract: IRFB20N50K SiHFB20N50K SiHFB20N50K-E3
    Text: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFB20N50K, SiHFB20N50K O-220 O-220lectual 18-Jul-08 IRFB20N50KPbF IRFB20N50K SiHFB20N50K-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFB20N50K, SiHFB20N50K O-220 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    IRFB20N50K

    Abstract: 91101 IRFB20N50 IRFB20N50KPbF
    Text: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFB20N50K, SiHFB20N50K 2002/95/EC O-220 O-220 IRFB20N50KPbF SiHFB20N50trademarks 2011/65/EU 2002/95/EC. 2002/95/EC IRFB20N50K 91101 IRFB20N50 PDF

    IRFB20N50K

    Abstract: SiHFB20N50K AN609
    Text: IRFB20N50K_RC, SiHFB20N50K_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		IRFB20N50K SiHFB20N50K AN609, 16-Apr-10 AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFB20N50K, SiHFB20N50K O-220 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFB20N50K, SiHFB20N50K O-220 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFB20N50K, SiHFB20N50K O-220 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFB20N50K, SiHFB20N50K O-220 O-220 IRFB20N50KPbF SiHFB20N50K-E3 IRFB20N50any 18-Jul-08 PDF