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    SIHF30N60E Search Results

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    SIHF30N60E Price and Stock

    Vishay Siliconix SIHF30N60E-GE3

    MOSFET N-CH 600V 29A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHF30N60E-GE3 Tube 2,975 1
    • 1 $6.78
    • 10 $4.567
    • 100 $6.78
    • 1000 $2.75
    • 10000 $2.75
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    Bristol Electronics SIHF30N60E-GE3 350
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    Quest Components SIHF30N60E-GE3 280
    • 1 $13.716
    • 10 $13.716
    • 100 $13.716
    • 1000 $6.858
    • 10000 $6.858
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    Vishay Intertechnologies SIHF30N60E-E3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHF30N60E-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHF30N60E-E3 Reel 19 Weeks 1,000
    • 1 -
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    • 1000 $3.79554
    • 10000 $2.58824
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    Mouser Electronics SIHF30N60E-E3
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    • 1000 $3.63
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    EBV Elektronik SIHF30N60E-E3 20 Weeks 50
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    Vishay Intertechnologies SIHF30N60E-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHF30N60E-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHF30N60E-GE3 Reel 19 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.75
    • 10000 $2.58824
    		Buy Now
    Mouser Electronics SIHF30N60E-GE3 1,345
    • 1 $5.74
    • 10 $4.51
    • 100 $3.1
    • 1000 $2.75
    • 10000 $2.69
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    TTI SIHF30N60E-GE3 Tube 10,000 50
    • 1 -
    • 10 -
    • 100 $3.08
    • 1000 $2.69
    • 10000 $2.64
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    TME SIHF30N60E-GE3 1
    • 1 $6.63
    • 10 $5.28
    • 100 $4.74
    • 1000 $4.74
    • 10000 $4.74
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    EBV Elektronik SIHF30N60E-GE3 100 20 Weeks 50
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    New Advantage Corporation SIHF30N60E-GE3 100 1
    • 1 -
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    • 100 $5.43
    • 1000 $5.43
    • 10000 $5.43
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    Vishay Intertechnologies SIHF30N60EE3

    POWER MOSFET Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIHF30N60EE3 1,900
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    Vishay Intertechnologies SIHF30N60EGE3

    POWER MOSFET Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIHF30N60EGE3 1,000
    • 1 -
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    SIHF30N60E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHF30N60E-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 29A TO220 Original PDF
    SIHF30N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 29A TO220 Original PDF

    SIHF30N60E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low figure-of-merit (FOM) Ron x Qg


    Original     		SiHF30N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHF30N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single COMPLIANT •


    Original     		SiHF30N60E 2002/95/EC O-220 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D TO-220 FULLPAK


    Original     		SiHF30N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHF30N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF30N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHF30N60E AN609, 0977m 5445m 6306m 8691m 10-Feb-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Generation Two


    Original     		SiHF30N60E 2002/95/EC O-220 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHF30N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF