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    SIHB18N60E Price and Stock

    Vishay Siliconix SIHB18N60E-GE3

    MOSFET N-CH 600V 18A TO263
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    DigiKey SIHB18N60E-GE3 Tube 1,000
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    Vishay Intertechnologies SIHB18N60E-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHB18N60E-GE3)
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    Avnet Americas SIHB18N60E-GE3 Reel 23 Weeks 1,000
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    Mouser Electronics SIHB18N60E-GE3
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    TTI SIHB18N60E-GE3 Reel 1,000
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    EBV Elektronik SIHB18N60E-GE3 20 Weeks 50
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    SIHB18N60E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHB18N60E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 18A TO263 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: SiHB18N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) typ. at 25 °C (Ω) • Low figure-of-merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) • • • • • 0.176 92 Qgs (nC) 10 Qgd (nC) 18


    Original     		PDF SiHB18N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB18N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHB18N60E AN609, 7006u 8346m 1570m 8207m 19-Mar-15