SIB457EDK Search Results

SIB457EDK Price and Stock

Filter by Manufacturer


Vishay Siliconix SIB457EDK-T1-GE3 MOSFET P-CH 20V 9A PPAK SC75-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIB457EDK-T1-GE3	Cut Tape	10,073		1	1 $0.81 10 $0.504 100 $0.81 1000 $0.22442 10000 $0.22442	Buy Now
	SIB457EDK-T1-GE3	Digi-Reel	10,073		1	1 $0.81 10 $0.504 100 $0.81 1000 $0.22442 10000 $0.22442	Buy Now
	SIB457EDK-T1-GE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.1929	Buy Now
Vishay Intertechnologies SIB457EDK-T1-GE3 Trans MOSFET P-CH 20V 6.8A 6-Pin PowerPAK SC-75 T/R - Tape and Reel (Alt: SIB457EDK-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIB457EDK-T1-GE3	Reel		6 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.1476	Buy Now
Mouser Electronics	SIB457EDK-T1-GE3		92,776			1 $0.61 10 $0.411 100 $0.28 1000 $0.201 10000 $0.15	Buy Now
Verical	SIB457EDK-T1-GE3		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.1463	Buy Now
Arrow Electronics	SIB457EDK-T1-GE3		3,000	6 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.1459	Buy Now
Newark	SIB457EDK-T1-GE3	Cut Tape			3,000	1 - 10 - 100 - 1000 $0.222 10000 $0.222	Buy Now

TTI	SIB457EDK-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.153	Buy Now
TME	SIB457EDK-T1-GE3				1	1 $0.504 10 $0.431 100 $0.294 1000 $0.231 10000 $0.224	Get Quote
Avnet Asia	SIB457EDK-T1-GE3			8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.23507	Buy Now
EBV Elektronik	SIB457EDK-T1-GE3			7 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIB457EDK Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIB457EDK-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 9A PPAK SC75-6L		Original	PDF

SIB457EDK Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AN609 Abstract: 443587 Text: SiB457EDK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	SiB457EDK AN609, 02-Apr-09 AN609 443587	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SiB457EDK Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiB457EDK 18-Jul-08	PDF
SC-75 Abstract: SiB457EDK-T1-GE3 68A6 Text: New Product SiB457EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.035 at VGS = - 4.5 V - 9a 0.049 at VGS = - 2.5 V - 9a 0.072 at VGS = - 1.8 V - 9a 0.130 at VGS = - 1.5 V -2 • Halogen-free According to IEC 61249-2-21	Original	SiB457EDK SC-75 2002/95/EC SC-75-6L-Single 18-Jul-08 SiB457EDK-T1-GE3 68A6	PDF
Untitled Abstract: No abstract text available Text: New Product SiB457EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.035 at VGS = - 4.5 V - 9a 0.049 at VGS = - 2.5 V - 9a 0.072 at VGS = - 1.8 V - 9a 0.130 at VGS = - 1.5 V -2 • Halogen-free According to IEC 61249-2-21	Original	SiB457EDK SC-75 2002/95/EC SC-75-6L-Single 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SiB457EDK Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.035 at VGS = - 4.5 V - 9a 0.049 at VGS = - 2.5 V - 9a 0.079 at VGS = - 1.8 V - 9a 0.157 at VGS = - 1.5 V -2 Qg (Typ.) 13 nC PowerPAK SC-75-6L-Single	Original	SiB457EDK SC-75-6L-Single SC-75 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiB457EDK Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.035 at VGS = - 4.5 V - 9a 0.049 at VGS = - 2.5 V - 9a 0.079 at VGS = - 1.8 V - 9a 0.157 at VGS = - 1.5 V -2 Qg (Typ.) 13 nC PowerPAK SC-75-6L-Single	Original	SiB457EDK SC-75-6L-Single SC-75 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SC-75 Abstract: SiB457EDK-T1-GE3 Text: New Product SiB457EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.035 at VGS = - 4.5 V - 9a 0.049 at VGS = - 2.5 V - 9a 0.072 at VGS = - 1.8 V - 9a 0.130 at VGS = - 1.5 V -2 • Halogen-free According to IEC 61249-2-21	Original	SiB457EDK SC-75 2002/95/EC SC-75-6L-Single 18-Jul-08 SiB457EDK-T1-GE3	PDF
BSC 68b Abstract: No abstract text available Text: SiB457EDK Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.035 at VGS = - 4.5 V - 9a 0.049 at VGS = - 2.5 V - 9a 0.079 at VGS = - 1.8 V - 9a 0.157 at VGS = - 1.5 V -2 Qg (Typ.) 13 nC PowerPAK SC-75-6L-Single	Original	SiB457EDK SC-75 2011/65/EU SC-75-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 BSC 68b	PDF
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance PowerPAK SC-75 Ultra-Low On-Resistance, and Ultra-Small Size Key features • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with	Original	SC-75 SC-75 SC-75, appli32 SiB437EDKT SiB441EDK SiB457EDK SiB433EDK SiB914DK SiB912DK	PDF
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l	PDF
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of	Original	SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402	PDF
Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,	Original	1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406	PDF
SiB914 Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance AND TEC I INNOVAT O L OGY PowerPAK SC-75 N HN POWER MOSFETs O 19 62-2012 Ultra-Low On-Resistance, and Ultra-Small Size KEY FEATURES • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with	Original	SC-75 SC-75 SC-75, space-const19 com/mosfets/powerpak-sc-75-package/ VMN-PT0196-1209 SiB914	PDF
Si7141 Abstract: SiA447DJ SI7615A Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on	Original	SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A	PDF

Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477	PDF
SI4497 Abstract: No abstract text available Text: V is h ay I n t e rt e c h n olo g y, I n c . Power MOSFETs Key features and Benefits • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best • Down to sub 2 mΩ in SO-8 footprint area • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm	Original	SC-75 VMN-PT0197-1006 SI4497	PDF