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Vishay Siliconix SI8497DB-T2-E1 MOSFET P-CH 30V 13A 6MICROFOOT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI8497DB-T2-E1	Digi-Reel			1	1 $0.85 10 $0.85 100 $0.85 1000 $0.85 10000 $0.85	Buy Now
	SI8497DB-T2-E1	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.20347	Buy Now
	SI8497DB-T2-E1	Cut Tape			1	1 $0.85 10 $0.85 100 $0.85 1000 $0.85 10000 $0.85	Buy Now
Vishay Intertechnologies SI8497DB-T2-E1 P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI8497DB-T2-E1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI8497DB-T2-E1	Reel		18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.15744	Buy Now
Mouser Electronics	SI8497DB-T2-E1		5,066			1 $0.58 10 $0.576 100 $0.543 1000 $0.33 10000 $0.162	Buy Now
Newark	SI8497DB-T2-E1	Cut Tape			3,000	1 - 10 - 100 - 1000 - 10000 $0.221	Buy Now
	SI8497DB-T2-E1	Reel			3,000	1 $0.226 10 $0.226 100 $0.226 1000 $0.226 10000 $0.204	Buy Now
Bristol Electronics	SI8497DB-T2-E1		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI8497DB-T2-E1		2,400			1 $0.644 10 $0.644 100 $0.644 1000 $0.2576 10000 $0.2576	Buy Now

TTI	SI8497DB-T2-E1	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.166	Buy Now
EBV Elektronik	SI8497DB-T2-E1			22 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI8497DBT2E1 P-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 13A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI8497DBT2E1		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI8497DB Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI8497DB-T2-E1		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 13A MICROFOOT		Original	PDF

SI8497DB Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Si8497DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)d 0.053 at VGS = - 4.5 V - 13 0.071 at VGS = - 2.5 V - 11 0.120 at VGS = - 2.0 V -5 VDS (V) - 30 Qg (Typ.) 16.3 nC MICRO FOOT Bump Side View S OVP Switch and Battery Switch for Portable	Original	PDF	Si8497DB 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: Si8497DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)d 0.053 at VGS = - 4.5 V - 13 0.071 at VGS = - 2.5 V - 11 0.120 at VGS = - 2.0 V -5 VDS (V) - 30 Qg (Typ.) 16.3 nC MICRO FOOT Bump Side View S OVP Switch and Battery Switch for Portable	Original	PDF	Si8497DB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
si8497 Abstract: No abstract text available Text: Si8497DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)d 0.053 at VGS = - 4.5 V - 13 0.071 at VGS = - 2.5 V - 11 0.120 at VGS = - 2.0 V -5 VDS (V) - 30 Qg (Typ.) 16.3 nC MICRO FOOT Bump Side View S OVP Switch and Battery Switch for Portable	Original	PDF	Si8497DB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8497
Untitled Abstract: No abstract text available Text: Si8497DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)d 0.053 at VGS = - 4.5 V - 13 0.071 at VGS = - 2.5 V - 11 0.120 at VGS = - 2.0 V -5 VDS (V) - 30 Qg (Typ.) 16.3 nC MICRO FOOT Bump Side View S OVP Switch and Battery Switch for Portable	Original	PDF	Si8497DB 2002/95/EC 11-Mar-11
Untitled Abstract: No abstract text available Text: SPICE Device Model Si8497DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si8497DB 11-Mar-11
Untitled Abstract: No abstract text available Text: SPICE Device Model Si8497DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si8497DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
12697 Abstract: 17932 611-11 Text: Si8497DB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	Si8497DB AN609, 3907u 7041m 6127m 7225u 3113u 3748u 9593u 18-Jul-11 12697 17932 611-11
Untitled Abstract: No abstract text available Text: Si8497DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) () MAX. ID (A) d 0.053 at VGS = -4.5 V -13 0.071 at VGS = -2.5 V -11 0.120 at VGS = -2 V -5 MICRO FOOT 1.5 x 1 D 4 x xxx xx x 1 m m S 3 mm	Original	PDF	Si8497DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SI-8100D Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,	Original	PDF	Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of	Original	PDF	SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402
Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,	Original	PDF	1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406
Si7141 Abstract: SiA447DJ SI7615A Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on	Original	PDF	SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm	Original	PDF	Si8489EDB Si8902AEDB VMN-PT0107-1402