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    AN609

    Abstract: SI7754DP
    Text: Si7754DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		Si7754DP AN609, 22-Aug-08 AN609 PDF

    S-82176

    Abstract: s8217
    Text: SPICE Device Model Si7754DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		Si7754DP 18-Jul-08 S-82176 s8217 PDF

    si7754

    Abstract: SI7754DP s-82176
    Text: SPICE Device Model Si7754DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		Si7754DP S-82176-Rev. 15-Sep-08 si7754 s-82176 PDF