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    SI7120ADN Search Results

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    SI7120ADN Price and Stock

    Vishay Siliconix SI7120ADN-T1-GE3

    MOSFET N-CH 60V 6A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7120ADN-T1-GE3 Cut Tape 1,081 1
    • 1 $2.2
    • 10 $1.411
    • 100 $2.2
    • 1000 $0.70195
    • 10000 $0.70195
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    SI7120ADN-T1-GE3 Digi-Reel 1,081 1
    • 1 $2.2
    • 10 $1.411
    • 100 $2.2
    • 1000 $0.70195
    • 10000 $0.70195
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    SI7120ADN-T1-GE3 Reel 3,000
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    • 10000 $0.6
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    ES Components SI7120ADN-T1-GE3
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    New Advantage Corporation SI7120ADN-T1-GE3 18,000 1
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    • 10000 $0.7143
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    Vishay Intertechnologies SI7120ADN-T1-GE3

    Trans MOSFET N-CH 60V 6.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7120ADN-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI7120ADN-T1-GE3 Reel 18,000 3,000
    • 1 -
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    • 10000 $0.5688
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    SI7120ADN-T1-GE3 Ammo Pack 10 Weeks, 3 Days 1
    • 1 $1.59
    • 10 $1.29
    • 100 $0.993
    • 1000 $0.993
    • 10000 $0.993
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    SI7120ADN-T1-GE3 Bulk 17 Weeks, 5 Days 1
    • 1 $1.71
    • 10 $1.41
    • 100 $1.11
    • 1000 $1.11
    • 10000 $1.11
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    Verical SI7120ADN-T1-GE3 6,000 3,000
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    SI7120ADN-T1-GE3 2,877 94
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    • 100 $1.1368
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    • 10000 $1.1368
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    SI7120ADN-T1-GE3 319 12
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    • 100 $0.702
    • 1000 $0.5577
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    Arrow Electronics SI7120ADN-T1-GE3 6,000 13 Weeks 3,000
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    • 10000 $0.5308
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    SI7120ADN-T1-GE3 Cut Strips 319 13 Weeks 1
    • 1 $1.6147
    • 10 $1.0626
    • 100 $0.702
    • 1000 $0.5577
    • 10000 $0.5577
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    Newark SI7120ADN-T1-GE3 Cut Tape 2,935 1
    • 1 $0.534
    • 10 $0.534
    • 100 $0.534
    • 1000 $0.534
    • 10000 $0.534
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    SI7120ADN-T1-GE3 Bulk 2,755 1
    • 1 $0.45
    • 10 $0.45
    • 100 $0.45
    • 1000 $0.45
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    Bristol Electronics SI7120ADN-T1-GE3 150
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    TTI SI7120ADN-T1-GE3 Reel 18,000 3,000
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    • 10000 $0.575
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    EBV Elektronik SI7120ADN-T1-GE3 14 Weeks 3,000
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    Vishay Intertechnologies SI7120ADNT1GE3

    N-CHANNEL 60 V (D-S) MOSFET Power Field-Effect Transistor, 6A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI7120ADNT1GE3 4,995
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    Vishay Huntington SI7120ADN-T1-GE3

    MOSFET N-CH 60V 6A 1212-8 PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI7120ADN-T1-GE3 43,100
    • 1 -
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    • 100 $2.1442
    • 1000 $1.9793
    • 10000 $1.9793
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    SI7120ADN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7120ADN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 6A 1212-8 PPAK Original PDF

    SI7120ADN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7120ADN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 9.5 0.031 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7120ADN 2002/95/EC Si7120ADN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI7120DN

    Abstract: PowerPAK 1212-8 Si7120ADN Si7120DN-T1-GE3
    Text: Specification Comparison Vishay Siliconix Si7120ADN vs. Si7120DN Description: Package: Pin Out: N-Channel, 60 V D-S MOSFET PowerPAK 1212-8 Identical Part Number Replacements: Si7120ADN-T1-GE3 replaces Si7120DN-T1-GE3 Si7120ADN-T1-GE3 replaces Si7120DN-T1-GE3


    Original     		PDF Si7120ADN Si7120DN Si7120ADN-T1-GE3 Si7120DN-T1-GE3 30-Apr-10 PowerPAK 1212-8

    AN609

    Abstract: Si7120ADN
    Text: Si7120ADN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si7120ADN AN609, 2295m 7008u 9617m 3901m 5657m 0805m 3250u 30-Aug-11 AN609

    Si7120ADN

    Abstract: 72959
    Text: New Product Si7120ADN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 9.5 0.031 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7120ADN 2002/95/EC Si7120ADN-T1-GE3 18-Jul-08 72959

    marking D3 TSOP-6

    Abstract: No abstract text available
    Text: New Product Si7120ADN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 9.5 0.031 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7120ADN 2002/95/EC Si7120ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking D3 TSOP-6

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7120ADN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 9.5 0.031 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7120ADN 2002/95/EC Si7120ADN-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7120ADN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 9.5 0.031 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7120ADN 2002/95/EC Si7120ADN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    M2G1

    Abstract: No abstract text available
    Text: SPICE Device Model Si7120ADN www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7120ADN 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 M2G1

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7120ADN www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7120ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7120ADN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 9.5 0.031 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7120ADN 2002/95/EC Si7120ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    4231F

    Abstract: ltc4359
    Text: LTC4231 Micropower Hot Swap Controller Features Description Enables Safe Board Insertion and Removal from a Power Supply n 4µA Supply Current n 0.3µA Shutdown Current n Wide Operating Voltage Range: 2.7V to 36V n Reverse Supply Protection to –40V n Adjustable Analog Current Limit with Circuit Breaker


    Original     		PDF LTC4231 12-Lead LTC4229 LTC4232 LTC2955 LTC4417 com/LTC4231 4231f 4231F ltc4359

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836