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    Vishay Siliconix SI5853DDC-T1-E3

    MOSFET P-CH 20V 4A 1206-8
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    DigiKey SI5853DDC-T1-E3 Digi-Reel 1
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    SI5853DDC-T1-E3 Reel
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    RS SI5853DDC-T1-E3 Bulk 1,500
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    Vishay Intertechnologies SI5853DDC-T1-E3

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    Bristol Electronics SI5853DDC-T1-E3 6,389
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    Quest Components SI5853DDC-T1-E3 5,111
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    Vishay Intertechnologies SI5853DDCT1E3

    P-CHANNEL 20 V (D-S) MOSFET WITH SCHOTTKY DIODE Small Signal Field-Effect Transistor, 4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA SI5853DDCT1E3 18,000
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    SI5853DDC Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5853DDC-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4A 1206-8 Original PDF

    SI5853DDC Datasheets Context Search

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    82583

    Abstract: Si5853DDC-T1-E3 SI5853DDC
    Text: New Product Si5853DDC Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES • LITTLE FOOT Plus Schottky Power MOSFET MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.105 at VGS = - 4.5 V - 4a 0.143 at VGS = - 2.5 V - 3.8 0.188 at VGS = - 1.8 V


    Original     		PDF Si5853DDC 18-Jul-08 82583 Si5853DDC-T1-E3

    Si5853CDC

    Abstract: Si5853DDC-T1-E3 SI5853DDC
    Text: Specification Comparison Vishay Siliconix Si5853DDC vs. Si5853CDC Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET with Schottky Diode 1206-8 ChipFET Identical Part Number Replacements: Si5853DDC-T1-E3 replaces Si5853CDC-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si5853DDC Si5853CDC Si5853DDC-T1-E3 Si5853CDC-T1-E3 27-Oct-08

    Untitled

    Abstract: No abstract text available
    Text: Si5853DDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.105 at VGS = - 4.5 V - 4a 0.143 at VGS = - 2.5 V - 3.8 0.188 at VGS = - 1.8 V -3 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5853DDC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5853DDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.105 at VGS = - 4.5 V - 4a 0.143 at VGS = - 2.5 V - 3.8 0.188 at VGS = - 1.8 V -3 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5853DDC 2002/95/EC Si5853DDC-T1hay 11-Mar-11

    Si5853DDC-T1-E3

    Abstract: JH MARKING CODE SCHOTTKY DIODE
    Text: Si5853DDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.105 at VGS = - 4.5 V - 4a 0.143 at VGS = - 2.5 V - 3.8 0.188 at VGS = - 1.8 V -3 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5853DDC 2002/95/EC 18-Jul-08 Si5853DDC-T1-E3 JH MARKING CODE SCHOTTKY DIODE

    Untitled

    Abstract: No abstract text available
    Text: Si5853DDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.105 at VGS = - 4.5 V - 4a 0.143 at VGS = - 2.5 V - 3.8 0.188 at VGS = - 1.8 V -3 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5853DDC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    4802

    Abstract: 7915 AN609
    Text: Si5853DDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si5853DDC AN609, 21-Oct-08 4802 7915 AN609

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477