si5456
Abstract: No abstract text available
Text: Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.010 at VGS = 10 V 12 0.0135 at VGS = 4.5 V 12 Qg (Typ.) 9.8 nC PowerPAK ChipFET Single 1 2 D 3 D D G D 7 S 6 S D APPLICATIONS 4 D D 8 • Halogen-free According to IEC 61249-2-21
|
Original
|
Si5456DU
2002/95/EC
Si5456DU-T1-GE3
11-Mar-11
si5456
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.010 at VGS = 10 V 12 0.0135 at VGS = 4.5 V 12 Qg (Typ.) 9.8 nC PowerPAK ChipFET Single 1 2 D 3 D D G D 7 S 6 S D APPLICATIONS 4 D D 8 • Halogen-free According to IEC 61249-2-21
|
Original
|
Si5456DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.010 at VGS = 10 V 12 0.0135 at VGS = 4.5 V 12 Qg (Typ.) 9.8 nC PowerPAK ChipFET Single 1 2 D 3 D D G D 7 S 6 S D APPLICATIONS 4 D D 8 • Halogen-free According to IEC 61249-2-21
|
Original
|
Si5456DU
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
marking code AC
Abstract: marking code A.C
Text: Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.010 at VGS = 10 V 12 0.0135 at VGS = 4.5 V 12 Qg (Typ.) 9.8 nC PowerPAK ChipFET Single 1 2 D 3 D D G D 7 S 6 S D APPLICATIONS 4 D D 8 • Halogen-free According to IEC 61249-2-21
|
Original
|
Si5456DU
2002/95/EC
Si5456DU-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code AC
marking code A.C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
|
Original
|
Si5456DU
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.010 at VGS = 10 V 12 0.0135 at VGS = 4.5 V 12 Qg (Typ.) 9.8 nC PowerPAK ChipFET Single 1 2 D 3 D D G D 7 S 6 S D APPLICATIONS 4 D D 8 • Halogen-free According to IEC 61249-2-21
|
Original
|
Si5456DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.010 at VGS = 10 V 12 0.0135 at VGS = 4.5 V 12 Qg (Typ.) 9.8 nC PowerPAK ChipFET Single 1 2 D 3 D D G D 7 S 6 S D APPLICATIONS 4 D D 8 • Halogen-free According to IEC 61249-2-21
|
Original
|
Si5456DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Si5456DU
Abstract: No abstract text available
Text: Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.010 at VGS = 10 V 12 0.0135 at VGS = 4.5 V 12 Qg (Typ.) 9.8 nC PowerPAK ChipFET Single 1 2 D 3 D D G D 7 S 6 S D APPLICATIONS 4 D D 8 • Halogen-free According to IEC 61249-2-21
|
Original
|
Si5456DU
2002/95/EC
18-Jul-08
|
PDF
|
transistor 6822
Abstract: transistors 6822 6822 transistor on 4409 on 4409 6822 equivalent 6822 transistor 4409 AN609
Text: Si5456DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
Si5456DU
AN609,
17-Mar-09
transistor 6822
transistors 6822
6822
transistor on 4409
on 4409
6822 equivalent
6822 transistor
4409
AN609
|
PDF
|
Untitled
Abstract: No abstract text available
Text: V i s h ay I n te r tec h n olo g y, I n c . Power mosfets Powe rPA K ChipFET® M O S F E ts Product Sheet 3 W Maximum Power Dissipation in Compact 3 mm x 1.8 mm Footprint Area: Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints
|
Original
|
VMN-PT0102-1007
|
PDF
|
Untitled
Abstract: No abstract text available
Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating
|
Original
|
VMN-PT0105-1007
|
PDF
|
SI5517
Abstract: si5459
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline AND TEC I INNOVAT O L OGY PowerPAK ChipFET® N HN POWER MOSFETs O 19 62-2012 Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints
|
Original
|
Si5517DU
VMN-PT0102-1209
SI5517
si5459
|
PDF
|
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
|
Original
|
Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
|
PDF
|
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs
|
Original
|
Diod92
VMN-SG2127-0911
Diode SOT-23 marking 15d
SI4210
si4812b
SI-4102
SI7149DP
SiM400
si4932
si7135
SiB914
SI4477
|
PDF
|
