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    SI4914BDY Price and Stock

    Vishay Siliconix SI4914BDY-T1-E3

    MOSFET 2N-CH 30V 8.4A/8A 8SOIC
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    DigiKey SI4914BDY-T1-E3 Reel
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    Vishay Siliconix SI4914BDY-T1-GE3

    MOSFET 2N-CH 30V 8.4A/8A 8SOIC
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    DigiKey SI4914BDY-T1-GE3 Digi-Reel 1
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    SI4914BDY-T1-GE3 Cut Tape
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    Vishay Intertechnologies SI4914BDY-T1-GE3

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    Bristol Electronics SI4914BDY-T1-GE3 8,685
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    Quest Components SI4914BDY-T1-GE3 6,948
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    Vishay Intertechnologies SI4914BDY-T1-E3

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    Bristol Electronics SI4914BDY-T1-E3 7,757
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    Vishay Huntington SI4914BDY-T1-GE3

    MOSFET 2N-CH 30V 8.4A 8-SOIC
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    Win Source Electronics SI4914BDY-T1-GE3 23,000
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    SI4914BDY Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4914BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8.4A 8-SOIC Original PDF
    SI4914BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8.4A 8-SOIC Original PDF

    SI4914BDY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si4914b

    Abstract: si4914 Si4914BDY
    Text: SPICE Device Model Si4914BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si4914BDY 18-Jul-08 si4914b si4914

    Si4914B

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original
    PDF Si4914BDY 2002/95/EC Si4914BDY-T1-E3 Si4914BDY-T1-GE3 11-Mar-11 Si4914B

    Untitled

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original
    PDF Si4914BDY 2002/95/EC Si4914BDY-T1-E3 Si4914BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si4914b

    Abstract: Si4914BDY-T1-E3
    Text: New Product Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V 8d VDS (V) Channel-1 30 Channel-2


    Original
    PDF Si4914BDY 08-Apr-05 si4914b Si4914BDY-T1-E3

    Si4914B

    Abstract: si4914 si4914bdy Si4914BDY-T1-E3 SI4914BD
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


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    PDF Si4914BDY 2002/95/EC 18-Jul-08 Si4914B si4914 Si4914BDY-T1-E3 SI4914BD

    AN609

    Abstract: 72482 si4914bdy 56181
    Text: Si4914BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si4914BDY AN609 16-Oct-07 72482 56181

    SI4914BDY-T1-E3

    Abstract: SI4914BDY Si4914DY Si4914DY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4914BDY vs. Si4914DY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET with Schottky Diode SO-8 Identical Part Number Replacements: Si4914BDY-T1-E3 replaces Si4914DY-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original
    PDF Si4914BDY Si4914DY Si4914BDY-T1-E3 Si4914DY-T1-E3 28-Feb-08

    Untitled

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original
    PDF Si4914BDY 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4914BDY-T1-E3

    Abstract: si4914
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original
    PDF Si4914BDY 18-Jul-08 SI4914BDY-T1-E3 si4914

    Si4914BDY-T1-E3

    Abstract: si4914bdy
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original
    PDF Si4914BDY 2002/95/EC 11-Mar-11 Si4914BDY-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original
    PDF Si4914BDY 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original
    PDF Si4914BDY Si4914BDY-T1-E3 Si4914BDY-T1-GE3 18-Jul-08

    IT8301E

    Abstract: 12073A AES2810 AMD r6970 SN0508073 R5C832 l3007 T127 temp NTC thermistor SCK 083 tokin 108
    Text: A B C D E Wistron CONFIDENTIAL 1 MODEL NAME : Diaz UMA 91.4AR01.001 Project Code: 08217-1 PCB NO : 1 2 2 Diaz Intergrate Intel GM Schematics Document uFCPGA Mobile Merom Intel Crestline-GM + ICH8M 3 3 REV : A00 4 4 Wistron Corporation 5 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih,


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    PDF 4AR01 R2118 CON6605 C6644 C6645 C6646 C6647 C6648 C6636 C6637 IT8301E 12073A AES2810 AMD r6970 SN0508073 R5C832 l3007 T127 temp NTC thermistor SCK 083 tokin 108

    IT8301E

    Abstract: IT8301 12073A EMC4001 L4910 C616A C536 PSE IT8512E Si4914B WISTRON power sequence
    Text: A 1 B C D E Model Name : Diaz Discrete Project Code : 91.4AR01.001 Revision : 08218-1 1 2 2 Diaz Discrete VGA ATI M82-S Schematics Document uFCPGA Mobile Merom Intel Crestline-PM + ICH8M 3 3 REV : A00 4 4 DZ1VQAT Wistron Corporation 5 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih,


    Original
    PDF 4AR01 M82-S R5401 R4303 R4029 R4030 C6925 100pF IT8301E IT8301 12073A EMC4001 L4910 C616A C536 PSE IT8512E Si4914B WISTRON power sequence

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477