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    SI4816BDY Price and Stock

    Vishay Siliconix SI4816BDY-T1-GE3

    MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
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    DigiKey SI4816BDY-T1-GE3 Digi-Reel 3,424 1
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    SI4816BDY-T1-GE3 Cut Tape 3,424 1
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    SI4816BDY-T1-GE3 Reel 2,500 2,500
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    New Advantage Corporation SI4816BDY-T1-GE3 17,500 1
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    Vishay Siliconix SI4816BDY-T1-E3

    MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
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    DigiKey SI4816BDY-T1-E3 Digi-Reel 2,815 1
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    SI4816BDY-T1-E3 Cut Tape 2,815 1
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    SI4816BDY-T1-E3 Reel 2,500 2,500
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    Vishay Intertechnologies SI4816BDY-T1-GE3

    Transistor MOSFET Array Dual N-CH 30V 5.8A/8.2A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4816BDY-T1-GE3)
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    Avnet Americas SI4816BDY-T1-GE3 Reel 5,000 17 Weeks 2,500
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    SI4816BDY-T1-GE3 Ammo Pack 24 Weeks, 4 Days 1
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    Mouser Electronics SI4816BDY-T1-GE3 13,508
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    Verical SI4816BDY-T1-GE3 5,000 2,500
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    Arrow Electronics SI4816BDY-T1-GE3 5,000 17 Weeks 2,500
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    Newark SI4816BDY-T1-GE3 Cut Tape 205 1
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    SI4816BDY-T1-GE3 Reel 2,500
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    TTI SI4816BDY-T1-GE3 Reel 15,000 2,500
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    Chip 1 Exchange SI4816BDY-T1-GE3 3,264
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    Avnet Asia SI4816BDY-T1-GE3 19 Weeks 2,500
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    EBV Elektronik SI4816BDY-T1-GE3 18 Weeks 2,500
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    Wuhan P&S SI4816BDY-T1-GE3 2,500 1
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    Vishay Intertechnologies SI4816BDY-T1-E3

    Transistor MOSFET Array Dual N-CH 30V 5.8A/8.2A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4816BDY-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4816BDY-T1-E3 Reel 17 Weeks 2,500
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    Mouser Electronics SI4816BDY-T1-E3 16,875
    • 1 $1.9
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    Verical SI4816BDY-T1-E3 9,400 20
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    SI4816BDY-T1-E3 5,000 2,500
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    SI4816BDY-T1-E3 2,500 2,500
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    Arrow Electronics SI4816BDY-T1-E3 5,000 17 Weeks 2,500
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    Newark SI4816BDY-T1-E3 Cut Tape 2,453 1
    • 1 $1.74
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    SI4816BDY-T1-E3 Reel 2,500
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    Quest Components SI4816BDY-T1-E3 12
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    TTI SI4816BDY-T1-E3 Reel 2,500
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    Chip1Stop SI4816BDY-T1-E3 Cut Tape 9,400
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    EBV Elektronik SI4816BDY-T1-E3 5,000 18 Weeks 2,500
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    New Advantage Corporation SI4816BDY-T1-E3 5,000 1
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    Vishay BLH SI4816BDY-T1-E3

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    Bristol Electronics SI4816BDY-T1-E3 15 2
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    SI4816BDY Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4816BDY Vishay Telefunken Original PDF
    SI4816BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5.8A 8-SOIC Original PDF
    SI4816BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5.8A 8-SOIC Original PDF

    SI4816BDY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4816BDY

    Abstract: Si4816BDY-T1-E3
    Text: Si4816BDY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V


    Original     		PDF Si4816BDY 08-Apr-05 Si4816BDY-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si4816BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V 9.5


    Original     		PDF Si4816BDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4816BDY

    Abstract: 0757 c16tj
    Text: SPICE Device Model Si4816BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4816BDY 18-Jul-08 0757 c16tj

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4816BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4816BDY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4816BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V 9.5


    Original     		PDF Si4816BDY Si4816BDY-T1-E3 Si4816BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4816BDY

    Abstract: MOSFET SPECIFICATIONS Si4816BDY-T1-E3 Si4816DY-T1-E3 PD1.4 Si4816DY Si4816DY-T1 73294
    Text: Specification Comparison Vishay Siliconix Si4816BDY vs. Si4816DY Description: Dual N-Channel, 30 V D-S MOSFET with Schottky Diode Package: SO-8 Pin Out: Identical Part Number Replacements: Si4816BDY-T1-E3 Replaces Si4816DY-T1-E3 Si4816BDY-T1 Replaces Si4816DY-T1


    Original     		PDF Si4816BDY Si4816DY Si4816BDY-T1-E3 Si4816DY-T1-E3 Si4816BDY-T1 Si4816DY-T1 10-Nov-06 MOSFET SPECIFICATIONS PD1.4 73294

    Si4816BDY-T1-GE3

    Abstract: Si4816BDY Si4816BDY-T1-E3
    Text: Si4816BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V 9.5


    Original     		PDF Si4816BDY 11-Mar-11 Si4816BDY-T1-GE3 Si4816BDY-T1-E3

    74696

    Abstract: C 5763 transistor AN609 Si4816BDY 2576-3
    Text: Si4816BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si4816BDY AN609, 05-Feb-10 74696 C 5763 transistor AN609 2576-3

    Untitled

    Abstract: No abstract text available
    Text: Si4816BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V 9.5


    Original     		PDF Si4816BDY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4816BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 6.8 FEATURES Qg (Typ) D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested


    Original     		PDF Si4816BDY Si4816BDY--E3 Si4816BDY-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4816BDY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V


    Original     		PDF Si4816BDY Si4816BDY-T1-E3 18-Jul-08

    Diod 0185

    Abstract: SI4816BDY-T1-GE3 Si4816BDY Si4816BDY-T1-E3
    Text: Si4816BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V 9.5


    Original     		PDF Si4816BDY 18-Jul-08 Diod 0185 SI4816BDY-T1-GE3 Si4816BDY-T1-E3

    4392

    Abstract: 74696 1526 3904 transistor AN609 Si4816BDY
    Text: Si4816BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4816BDY AN609 09-May-07 4392 74696 1526 3904 transistor

    Si4816BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4816BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4816BDY S-52214Rev. 24-Oct-05

    Si4816BDY-T1-E3

    Abstract: No abstract text available
    Text: Si4816BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V 9.5


    Original     		PDF Si4816BDY Si4816BDY-T1-E3 Si4816BDY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4816BDY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V


    Original     		PDF Si4816BDY Si4816BDY-T1-E3 08-Apr-05

    LTC4007-1

    Abstract: zener diode 4.2V 0.25W 200W MOSFET POWER AMP 2N7002 MARKING IN4009 4009 circuit examples LTC4009 LTC4412 36V Li-Ion battery charge controller Datasheet ic 4009
    Text: LTC4009 LTC4009-1/LTC4009-2 High Efficiency, Multi-Chemistry Battery Charger DESCRIPTION FEATURES n n n n n n n n n n n n General Purpose Battery Charger Controller Efficient 550kHz Synchronous Buck PWM Topology ±0.5% Output Float Voltage Accuracy Programmable Charge Current: 4% Accuracy


    Original     		PDF LTC4009 LTC4009-1/LTC4009-2 550kHz 20-Pin LTC4413 LTC4414 LTC4416 4009fb LTC4007-1 zener diode 4.2V 0.25W 200W MOSFET POWER AMP 2N7002 MARKING IN4009 4009 circuit examples LTC4009 LTC4412 36V Li-Ion battery charge controller Datasheet ic 4009

    IC 4012 DATASHEET

    Abstract: 4012 IC data sheet 2N7002 MARKING LTC4012 dc adaptor 30v HV Charger Reference Design LTC1769 LTC4012-3 ORing diode VC10
    Text: LTC4012-3 High Efficiency, Multi-Chemistry Battery Charger with PowerPath Control DESCRIPTION FEATURES n n n n n n n n n n n n n General Purpose Battery Charger Controller Efficient 550kHz Synchronous Buck PWM Topology ±0.5% Output Float Voltage Accuracy


    Original     		PDF LTC4012-3 550kHz 20-Pin LTC4413 LTC4414 LTC4416 40123f IC 4012 DATASHEET 4012 IC data sheet 2N7002 MARKING LTC4012 dc adaptor 30v HV Charger Reference Design LTC1769 LTC4012-3 ORing diode VC10

    ISL88732

    Abstract: SMPS CIRCUIT DIAGRAM lg FN6396 ISL8112 ISL8112IRZ ISL8112IRZ-T TB379 lg SMPS circuit multiple output pc smps pwm design
    Text: ISL8112 Data Sheet November 21, 2006 High Light-Load Efficiency, Dual-Output, Main Power Supply Controllers ISL8112 is a dual-output Synchronous Buck controller with 2A integrated driver. It features high light load efficiency which is especially preferred in systems concerned with high efficiency


    Original     		PDF ISL8112 ISL8112 FN6396 ISL88732 SMPS CIRCUIT DIAGRAM lg ISL8112IRZ ISL8112IRZ-T TB379 lg SMPS circuit multiple output pc smps pwm design

    ISL6236

    Abstract: TB379 ISL6236IRZA ISL6236IRZA-T
    Text: ISL6236 Data Sheet February 1, 2007 High-Efficiency, Quad-Output, Main Power Supply Controllers for Notebook Computers The ISL6236 dual step-down, switch-mode power-supply SMPS controller generates logic-supply voltages in battery-powered systems. The ISL6236 include two


    Original     		PDF ISL6236 ISL6236 100mA FN6373 TB379 ISL6236IRZA ISL6236IRZA-T

    RF3833

    Abstract: 4TPE220MFC2 BSC035N04LS 25SVPD82M LTC3833 LTC3833EUDC SUNCON capacitor SUNCon me LTC3833E LTC3833EFE
    Text: LTC3833 Fast Accurate Step-Down DC/DC Controller with Differential Output Sensing DESCRIPTION FEATURES Wide VIN Range: 4.5V to 38V n V OUT Range: 0.6V to 5.5V n Output Accuracy: ±0.25% at 25°C and ±0.67% over Temperature n Differential Output Sensing Allowing Up to 500mV


    Original     		PDF LTC3833 500mV 200kHz 20-Pin 250kHz 770kHz, LTC3850/LTC3850-1 780kHz, QFN-28, RF3833 4TPE220MFC2 BSC035N04LS 25SVPD82M LTC3833 LTC3833EUDC SUNCON capacitor SUNCon me LTC3833E LTC3833EFE

    an1272

    Abstract: ISL6236 ISL6236IRZA ISL6236IRZA-T TB347 TB363 TB379
    Text: ISL6236 Data Sheet April 29, 2010 High-Efficiency, Quad-Output, Main Power Supply Controllers for Notebook Computers The ISL6236 dual step-down, switch-mode power-supply SMPS controller generates logic-supply voltages in battery-powered systems. The ISL6236 include two


    Original     		PDF ISL6236 ISL6236 100mA 5m-1994. FN6373 an1272 ISL6236IRZA ISL6236IRZA-T TB347 TB363 TB379

    24V 10A SMPS

    Abstract: 24v 5a smps 5v dc smps an1272 dual high side MOSFET driver with charge pump circuit diagram of mosfet based smps power supply computer smps circuit diagram PAL 0007 E amplificador smps 3.3v 5v smps isolated 5v output
    Text: ISL6236A Data Sheet March 18, 2008 High-Efficiency, Quad-Output, Main Power Supply Controllers for Notebook Computers The ISL6236A dual step-down, switch-mode power-supply SMPS controller generates logic-supply voltages in battery-powered systems. The ISL6236A includes two


    Original     		PDF ISL6236A ISL6236A 100mA 5m-1994. FN6453 24V 10A SMPS 24v 5a smps 5v dc smps an1272 dual high side MOSFET driver with charge pump circuit diagram of mosfet based smps power supply computer smps circuit diagram PAL 0007 E amplificador smps 3.3v 5v smps isolated 5v output

    Untitled

    Abstract: No abstract text available
    Text: LTC3880/LTC3880-1 Dual Output PolyPhase Step-Down DC/DC Controller with Digital Power System Management DESCRIPTION FEATURES PMBus/I2C Compliant Serial Interface – Telemetry Read Back includes VIN, IIN, VOUT, IOUT, Temperature and Faults – Programmable Voltage, Current Limit, Digital


    Original     		PDF LTC3880/LTC3880-1 250kHz 16-Bit 3880fa