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    SI2342DS Price and Stock

    Vishay Siliconix SI2342DS-T1-GE3

    MOSFET N-CH 8V 6A SOT-23
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    DigiKey SI2342DS-T1-GE3 Reel 12,000 3,000
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    Vishay Siliconix SI2342DS-T1-BE3

    N-CHANNEL 8-V (D-S) MOSFET
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    DigiKey SI2342DS-T1-BE3 Cut Tape 2,026 1
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    SI2342DS-T1-BE3 Digi-Reel 2,026 1
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    SI2342DS-T1-BE3 Reel 3,000
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    MOSLEADER SI2342DS-T1-GE3-ML

    N 8V 6A SOT-23
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    DigiKey SI2342DS-T1-GE3-ML Reel 200
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    Vishay Intertechnologies SI2342DS-T1-BE3

    N-CHANNEL 8-V (D-S) MOSFET - Tape and Reel (Alt: SI2342DS-T1-BE3)
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    Avnet Americas SI2342DS-T1-BE3 Reel 3,000 18 Weeks 3,000
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    Mouser Electronics SI2342DS-T1-BE3 74,100
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    Newark SI2342DS-T1-BE3 Bulk 3,000
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    TTI SI2342DS-T1-BE3 Reel 33,000 3,000
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    Vishay Intertechnologies SI2342DS-T1-GE3

    N-CHANNEL 8-V (D-S) MOSFET - Tape and Reel (Alt: SI2342DS-T1-GE3)
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    Avnet Americas SI2342DS-T1-GE3 Reel 18 Weeks 3,000
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    Mouser Electronics SI2342DS-T1-GE3 139,604
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    Verical SI2342DS-T1-GE3 6,000 3,000
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    Arrow Electronics SI2342DS-T1-GE3 6,000 18 Weeks 3,000
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    SI2342DS-T1-GE3 3,000 18 Weeks 3,000
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    SI2342DS-T1-GE3 Cut Strips 43 18 Weeks 1
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    Newark SI2342DS-T1-GE3 Cut Tape 367 5
    • 1 $0.503
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    SI2342DS-T1-GE3 Reel 3,000
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    Bristol Electronics SI2342DS-T1-GE3 228
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    SI2342DS-T1-GE3 100
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    Quest Components SI2342DS-T1-GE3 182
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    SI2342DS-T1-GE3 182
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    TTI SI2342DS-T1-GE3 Reel 3,000
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    TME SI2342DS-T1-GE3 354 1
    • 1 $0.454
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    Avnet Asia SI2342DS-T1-GE3 23 Weeks 3,000
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    Chip-Germany GmbH SI2342DS-T1-GE3 667
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    EBV Elektronik SI2342DS-T1-GE3 22 Weeks 3,000
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    Find more SI2342DS price and stock on Findchips.com

    SI2342DS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2342DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 8V 6A SOT-23 Original PDF

    SI2342DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si2342

    Abstract: SI2342DS
    Text: New Product Si2342DS Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.017 at VGS = 4.5 V 6 0.020 at VGS = 2.5 V 6 0.022 at VGS = 1.8 V 6 0.030 at VGS = 1.5 V 6 0.075 at VGS = 1.2 V 6 VDS (V) 8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si2342DS OT-23 2002/95/EC Si2342DS-T1-GE3trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si2342

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2342DS Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.017 at VGS = 4.5 V 6 0.020 at VGS = 2.5 V 6 0.022 at VGS = 1.8 V 6 0.030 at VGS = 1.5 V 6 0.075 at VGS = 1.2 V 6 VDS (V) 8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si2342DS 2002/95/EC OT-23 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2342DS Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.017 at VGS = 4.5 V 6 0.020 at VGS = 2.5 V 6 0.022 at VGS = 1.8 V 6 0.030 at VGS = 1.5 V 6 0.075 at VGS = 1.2 V 6 VDS (V) 8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si2342DS OT-23 2002/95/EC Si2342DS-T1-GE3hay 11-Mar-11

    si2342ds

    Abstract: 63302 si2342 SI2342DS-T1-GE3
    Text: New Product Si2342DS Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.017 at VGS = 4.5 V 6 0.020 at VGS = 2.5 V 6 0.022 at VGS = 1.8 V 6 0.030 at VGS = 1.5 V 6 0.075 at VGS = 1.2 V 6 VDS (V) 8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si2342DS OT-23 2002/95/EC Si2342DS-T1-GE3hay 11-Mar-11 63302 si2342 SI2342DS-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2342DS www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2342DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI2342DS

    Abstract: si23 S12-1321
    Text: SPICE Device Model Si2342DS www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si2342DS 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si23 S12-1321

    Untitled

    Abstract: No abstract text available
    Text: Si2342DS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si2342DS AN609, 7591u 5804m 8813m 6905u 6317m 4989m 7173m 27-Jun-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2342DS Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.017 at VGS = 4.5 V 6 VDS (V) 8 0.020 at VGS = 2.5 V 6 0.022 at VGS = 1.8 V 6 0.030 at VGS = 1.5 V 6 0.075 at VGS = 1.2 V 6 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si2342DS 2002/95/EC OT-23 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI1489EDH

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems


    Original     		PDF SiA920DJ SC-70 SiB914DK SC-75 Si1011X Si8805EDB com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1402 SI1489EDH

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    SiB914

    Abstract: SiA427DJ si2329ds si8802
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS


    Original     		PDF SC-70 SC-75 com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1209 SiB914 SiA427DJ si2329ds si8802