marking 2341E
Abstract: 2341E SSF2341E
Text: SSF2341E DESCRIPTION The SSF2341E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as -2.5V. GENERAL FEATURES ● VDS = -20V,ID =-4A RDS(ON) < 73mΩ @ VGS=-1.8V RDS(ON) < 54mΩ @ VGS=-2.5V
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SSF2341E
SSF2341E
Rating3000V
OT-23
2341E
OT-23
330mm
marking 2341E
2341E
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SOT23
Abstract: SSF2301A 2301A
Text: SSF2301A D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES
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SSF2301A
SSF2301A
SOT23
2301A
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Untitled
Abstract: No abstract text available
Text: SSF2305 D DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES
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GDSSF2305
SSF2305
SSF2305
OT-23
950TYP
550REF
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Mosfet
Abstract: SSF2312
Text: SSF2312 20V N-Channel MOSFET D DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching
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SSF2312
SSF2312
OT-23
950TYP
550REF
Mosfet
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Untitled
Abstract: No abstract text available
Text: SSF230 2 D DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G
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GDSSF230
SSF2302
OT-23
950TYP
550REF
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Untitled
Abstract: No abstract text available
Text: SSF2301A D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES
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GDSSF2301A
SSF2301A
SSF2301A
ABSOT-23
950TYP
550REF
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Mosfet
Abstract: SSF2314
Text: SSF2314 20V N-Channel MOSFET D DESCRIPTION The SSF2314 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application.
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SSF2314
SSF2314
OT-23
950TYP
550REF
Mosfet
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Untitled
Abstract: No abstract text available
Text: SSF2314 D DESCRIPTION The SSF2314 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application. G
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GDSSF2314
SSF2314
OT-23
QuSOT-23
950TYP
550REF
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"battery protection"
Abstract: SOT23-3
Text: SSF2300B D DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G
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SSF2300B
SSF2300B
OT23-3
2300B
SSF2300Brameters)
"battery protection"
SOT23-3
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SSF2300A
Abstract: "battery protection"
Text: SSF2300A D DESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G
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SSF2300A
SSF2300A
OT-23
"battery protection"
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SSF2336
Abstract: "battery protection"
Text: SSF2336 D DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G S
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SSF2336
SSF2336
OT-23
"battery protection"
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SSF2316E
Abstract: DFN3×3-8L 2316E "battery protection"
Text: SSF2316E GENERAL FEATURES ● VDS = 20V,ID = 7A RDS ON < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V Schematic diagram ESD Rating:2000V HBM ● High Power and current handing capability ● Lead free product is acquired
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SSF2316E
Rating2000V
2316E
25unless
SSF2316E
DFN3×3-8L
2316E
"battery protection"
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SSF2306
Abstract: "battery protection" D2306
Text: SSF2306 D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S GENERAL FEATURES Schematic diagram ● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 35mΩ @ VGS=4.5V
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SSF2306
SSF2306
OT-23
OT-23
180mm
"battery protection"
D2306
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"battery protection"
Abstract: No abstract text available
Text: SSF2334 D DESCRIPTION The SSF2334 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G S
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SSF2334
SSF2334
OT-23
"battery protection"
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Mosfet
Abstract: SSF2305
Text: SSF2305 20V P-Channel MOSFET D DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch or in PWM applications.
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SSF2305
SSF2305
OT-23
950TYP
550REF
Mosfet
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Mosfet
Abstract: SSF2301A
Text: SSF2301A 20V P-Channel MOSFET D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
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SSF2301A
SSF2301A
OT-23
950TYP
550REF
Mosfet
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Untitled
Abstract: No abstract text available
Text: SSF2336 D DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G
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GDSSF2336
SSF2336
OT-23
QuantSOT-23
950TYP
550REF
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Untitled
Abstract: No abstract text available
Text: SSF2300B D DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
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GDSSF2300B
SSF2300B
OT23-3
OT23-3
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SSF2301
Abstract: 2301 marking sot-23
Text: SSF2301 D DESCRIPTION The SSF2301 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES Schematic diagram
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SSF2301
SSF2301
2301 marking sot-23
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SOT23
Abstract: SSF2301B 2301B
Text: SSF2301B D DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES
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SSF2301B
SSF2301B
2301B
180mrameters)
SOT23
2301B
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Mosfet
Abstract: SSF2300B
Text: SSF2300B 20V N-Channel MOSFET DESCRIPTION D The SSF2300B uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching
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SSF2300B
SSF2300B
OT23-3
Mosfet
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Mosfet
Abstract: SSF2316E
Text: SSF2316E 20V Dual N-Channel MOSFET GENERAL FEATURES ● VDS = 20V,ID = 7A RDS ON < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V Schematic Diagram ESD Rating:2000V HBM ● High Power and current handing capability
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SSF2316E
2316E
65BSC
Mosfet
SSF2316E
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Untitled
Abstract: No abstract text available
Text: SSF2300 D DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G
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GDSSF2300
SSF2300
OT-23
QuantitT-23
950TYP
550REF
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Mosfet
Abstract: SSF2306
Text: SSF2306 30V N-Channel MOSFET D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S GENERAL FEATURES Schematic Diagram ● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V
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SSF2306
SSF2306
OT-23
SSF23
950TYP
550REF
Mosfet
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