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    MB85RS256 Price and Stock

    KAGA FEI America Inc MB85RS256TYPNF-GS-BCERE1

    IC FRAM 256KBIT SPI 33MHZ 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MB85RS256TYPNF-GS-BCERE1 Digi-Reel 28,986 1
    • 1 $4.02
    • 10 $3.565
    • 100 $3.1633
    • 1000 $2.90948
    • 10000 $2.90948
    		Buy Now
    MB85RS256TYPNF-GS-BCERE1 Cut Tape 28,986 1
    • 1 $4.02
    • 10 $3.565
    • 100 $3.1633
    • 1000 $2.90948
    • 10000 $2.90948
    		Buy Now
    MB85RS256TYPNF-GS-BCERE1 Reel 28,500 1,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $2.65011
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    Mouser Electronics MB85RS256TYPNF-GS-BCERE1 4,442
    • 1 $3.89
    • 10 $3.53
    • 100 $3.08
    • 1000 $2.81
    • 10000 $2.43
    		Buy Now

    KAGA FEI America Inc MB85RS256BPNF-G-JNERE1

    IC FRAM 256KBIT SPI 33MHZ 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MB85RS256BPNF-G-JNERE1 Reel 16,500 1,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $3.53349
    		Buy Now
    Mouser Electronics MB85RS256BPNF-G-JNERE1 8,527
    • 1 $4.21
    • 10 $3.82
    • 100 $3.33
    • 1000 $3.04
    • 10000 $2.62
    		Buy Now

    KAGA FEI America Inc MB85RS256BPNF-G-JNE1

    IC FRAM 256KBIT SPI 33MHZ 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MB85RS256BPNF-G-JNE1 Tube 285
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.84014
    • 10000 $2.84014
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    Mouser Electronics MB85RS256BPNF-G-JNE1 818
    • 1 $4.21
    • 10 $3.82
    • 100 $3.32
    • 1000 $3.19
    • 10000 $2.88
    		Buy Now

    KAGA FEI America Inc MB85RS256APNF-G-JNE1

    IC FRAM 256KBIT SPI 25MHZ 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MB85RS256APNF-G-JNE1 Tray
    • 1 -
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    KAGA FEI America Inc MB85RS256TYPNF-G-AWE2

    IC FRAM 256KBIT SPI 33MHZ 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MB85RS256TYPNF-G-AWE2 Tube
    • 1 -
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    • 10000 -
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    Mouser Electronics MB85RS256TYPNF-G-AWE2 228
    • 1 $3.68
    • 10 $3.34
    • 100 $2.91
    • 1000 $2.79
    • 10000 $2.52
    		Buy Now
    Find more MB85RS256 price and stock on Findchips.com

    MB85RS256 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB85RS256 Fujitsu Memory FRAM CMOS 256 K (32 K x 8) Bit SPI Original PDF
    MB85RS256APNF-G-JNE1 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 256KBIT 25MHZ 8SOP Original PDF
    MB85RS256APNF-G-JNERE1 FUJITSU Semiconductor IC FRAM 256KBIT SPI 25MHZ 8SOP Original PDF
    MB85RS256BPNF-G-JNE1 Fujitsu Electronics America Integrated Circuits (ICs) - Memory - IC FRAM 256K SPI 33MHZ 8SOP Original PDF
    MB85RS256BPNF-G-JNERE1 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 256KBIT 33MHZ 8SOP Original PDF
    MB85RS256PNF-G-JNE1 Fujitsu Memory FRAM CMOS 256 K (32 K x 8) Bit SPI Original PDF
    MB85RS256TYPNF-G-BCERE1 FUJITSU Semiconductor IC FRAM 256KBIT SPI 33MHZ 8SOP Original PDF
    MB85RS256TYPNF-GS-AWE2 FUJITSU Semiconductor 256KBIT FRAM WITH SPI, 1.8~3.6V, Original PDF
    MB85RS256TYPNF-GS-AWERE2 FUJITSU Semiconductor 256KBIT FRAM WITH SPI, 1.8~3.6V, Original PDF
    MB85RS256TYPNF-GS-BCERE1 Fujitsu Electronics America Integrated Circuits (ICs) - Memory - IC FRAM 256K SPI 33MHZ 8SOP Original PDF

    MB85RS256 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MB85RS256A

    Abstract: DS501 mb85rs
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-0v01-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.


    Original     		DS501-00007-0v01-E MB85RS256A MB85RS256A DS501 mb85rs PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00007-4v0-E FRAM MB85RS256A MB85RS256A is a 256K-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory, it is suitable for the log management and the storage of the


    Original     		NP501-00007-4v0-E MB85RS256A MB85RS256A 256K-bits PDF

    MB85RS256B

    Abstract: RS256B 005MAX Latch up test JESD78 MB85RS256BPNF
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00021-2v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256B • DESCRIPTION MB85RS256B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		DS501-00021-2v0-E MB85RS256B MB85RS256B RS256B 005MAX Latch up test JESD78 MB85RS256BPNF PDF

    MB85RS256

    Abstract: MB85RS256PNF FPT-8P-M02 0011B 0110B FUJITSU FRAM
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13105-2E Memory FRAM CMOS 256 K 32 K x 8 Bit SPI MB85RS256 • DESCRIPTION MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory


    Original     		DS05-13105-2E MB85RS256 MB85RS256 F0702 MB85RS256PNF FPT-8P-M02 0011B 0110B FUJITSU FRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-4v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		DS501-00007-4v0-E MB85RS256A MB85RS256A PDF

    Untitled

    Abstract: No abstract text available
    Text: New Products MB85RS256 256K-bit Serial Peripheral Interface FRAM MB85RS256 A 256K-bit 1T1C-type FRAM equipped with a serial peripheral interface SPI . It is a nonvolatile memory that enables a large number of writing/reading cycles at high speed and with low power consumption.


    Original     		MB85RS256 256K-bit MB85R2OLD MB85Rxxxx MB85R1001ï MB85R1002ï MB85R256 PDF

    F0512

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13105-1E Memory FRAM CMOS 256 K 32 K x 8 Bit SPI MB85RS256 • DESCRIPTION MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory


    Original     		DS05-13105-1E MB85RS256 MB85RS256 F0512 F0512 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00021-3v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256B • DESCRIPTION MB85RS256B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		DS501-00021-3v0-E MB85RS256B MB85RS256B PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00021-2v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256B • DESCRIPTION MB85RS256B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		DS501-00021-2v0-E MB85RS256B MB85RS256B PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-2v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		DS501-00007-2v0-E MB85RS256A MB85RS256A PDF

    MB85RS256APNF

    Abstract: MB85RS256APN MB85RS256APNF-G-JNERE1
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-1v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		DS501-00007-1v0-E MB85RS256A MB85RS256A MB85RS256APNF MB85RS256APN MB85RS256APNF-G-JNERE1 PDF

    MB85RS256

    Abstract: No abstract text available
    Text: MB85RS256 256Kbit FRAM SPI Memory Specifications Target spec. Fujitsu Limited Memory FRAM CMOS Electronic Devices Group 256K bits 32K x 8 SPI SOP-8 System Micro Div. MB85RS256 Rev0.4 PART NUMBER MB85RS256PNF DESCRIPTIONS MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a


    Original     		MB85RS256 256Kbit MB85RS256 MB85RS256PNF 1010times PDF

    RS256A

    Abstract: MB85RS256APNF-G-JNERE1
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-3v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		DS501-00007-3v0-E MB85RS256A MB85RS256A RS256A MB85RS256APNF-G-JNERE1 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-6v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		DS501-00007-6v0-E MB85RS256A MB85RS256A PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-5v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		DS501-00007-5v0-E MB85RS256A MB85RS256A PDF

    MB85RS256PNF

    Abstract: MB85RS256
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13105-3E Memory FRAM CMOS 256 K 32 K x 8 Bit SPI MB85RS256 • DESCRIPTION MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory


    Original     		DS05-13105-3E MB85RS256 MB85RS256 MB85RS256PNF PDF

    MB85RS256

    Abstract: FUJITSU FRAM 0011B 0110B FPT-8P-M02
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13105-2Ea Memory FRAM CMOS 256 K 32 K x 8 Bit SPI MB85RS256 • DESCRIPTION MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory


    Original     		DS05-13105-2Ea MB85RS256 MB85RS256 FUJITSU FRAM 0011B 0110B FPT-8P-M02 PDF

    RS256A

    Abstract: MB85RS256APNF MB85RS256APNF-G-JNERE1 MB85RS256APNF-G-JNE1
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-5v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		DS501-00007-5v0-E MB85RS256A MB85RS256A RS256A MB85RS256APNF MB85RS256APNF-G-JNERE1 MB85RS256APNF-G-JNE1 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.


    Original     		MB85R2001/MB85R2002 A0-16 MB85RS256 256K-bit MB85R4xxx MB85R2001 MB85R2002 MB85R1001 PDF

    circuit humidity sensor his06

    Abstract: DUSB-ARA42-T11A-FA DUSB-BRA42-T11-FA GF12-US0520 Humidifier his-06 "Humidity Sensors" his-06 mpz2012s300AT MCR03EZPF102 MB91F662 GCM32ER71E106KA42L
    Text: FR80 Family 32-BIT MICROCONTROLLER MB91F662 bits pot black USB board User's Manual Disclaimer and Legal Notice „ The contents of this document are subject to change without a prior notice, thus ask our sales division about the latest one. „ The descriptions of functions and application circuit examples in this document are provided


    Original     		32-BIT MB91F662 circuit humidity sensor his06 DUSB-ARA42-T11A-FA DUSB-BRA42-T11-FA GF12-US0520 Humidifier his-06 "Humidity Sensors" his-06 mpz2012s300AT MCR03EZPF102 MB91F662 GCM32ER71E106KA42L PDF

    HIS-06

    Abstract: SG2A MB91F662 MB85RS256 PSW2.1 INT19 7seg led PKLCS1212E Buzzer date sheet HIS06
    Text: 5 4 3.3V 3 2 1 3.3V MCU FRAM SPI Oscillation LED[5:1] SEG[7:0] SEG[15:8] 3.3V X0 X0 3.3V CX49GFWB R83 4.7kΩ Y1 3.3V 3.3V D C6 0.1uF Temp TH[0:11] B 3.3V 3.3V C10 3.3V R84 0Ω R7 10KΩ 3.3V SO SI SCK 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 74 73 72


    Original     		CX49GFWB MB85RS256 SS-12SDP2 MB3793-30A FT232RL 22000pF HIS-06 SG2A MB91F662 MB85RS256 PSW2.1 INT19 7seg led PKLCS1212E Buzzer date sheet HIS06 PDF

    EEPROM

    Abstract: fram EEPROM SPI FUJITSU FRAM MB85RS256 M95256W6 temp sensor program EEPROM, 256K-BIT 256KBIT
    Text: FRAM Writes Faster than EEPROM SPI Interface FRAM Writing Speed . Demo Program Flow . EEPROM Writing Speed Start ( Execute every 5s ) Write Temp Data ( Data Size : 1 Byte ) ( SPI Data Rate : 1 Mbps ) EEPROM FRAM Date size written in 1 second (3,418 [Bytes/s])


    Original     		MB85RS256 256Kbit M95256W6 EEPROM fram EEPROM SPI FUJITSU FRAM temp sensor program EEPROM, 256K-BIT PDF

    s29gl032n90

    Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
    Text: covPG00-00071e.fm 1 ページ ２００７年５月１０日 木曜日 午前１１時２９分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,


    Original     		covPG00-00071e PG00-00071-2E s29gl032n90 MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11 PDF

    S29JL032H70

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book


    Original     		PG00-00091-3E ACD-10131 CD-10131 DS04-27211-5E MB3789 S29JL032H70 PDF