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    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM5362205BW/BWG DRAM MODULE KMM5362205BW/BWG Fast Page Mode with Extended Data Out 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362205BW is a 2M bit x 36 Dynamic RAM high density memory module. The


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    PDF KMM5362205BW/BWG KMM5362205BW/BWG 2Mx36 KMM5362205BW 1Mx16 42-pin 24-pin 72-pin

    KMM366F213BK6

    Abstract: KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line Memory Module SIMM l-l. Fast Page ( FP ) Mode ;16MBased 2Mx36 4Mx32 4Mx3fi 8Mx32 8Mx3C 64MBased>- KMM5321200BW/BWG-6.Tf KMM5321200BW/BWGKMM5361203BW/BWG-6 KMM5361203BW/BWG-7 KMM5322200BW/BWG-6 KMM5322200BW/BWG-7


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    PDF 2Mx36 4Mx32 8Mx32 KMM374F4l KMM374F410BK-6 8Mx64 MM366F883AK-5_ KMM366F883AK-6 KMM366F803AK-5 KMM374F KMM366F213BK6 KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12

    1MX16

    Abstract: KMM5324104BK KMM5321200B
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE DRAM Module Org. Part No. Feature 4 Byte Single In-Line Memory Module 5 V 1Mx32 1Mx36 2Mx32 4Mx36 8Mx32 8Mx36 1— -— — r ÍF P .S G , PPD 1Mx16, SOJ 60/70 750 1024/16 r ~ m o w KMM5321200BW/BWG


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    PDF 1Mx32 KMM5321200AW/AWG KMM5321200BW/BWG KMM5321204AW/AWG KMM5321204BW/BWG 1Mx36 M15361203A 1Mx16, 1Mx16 16Mx4, 1MX16 KMM5324104BK KMM5321200B

    KMM364C12

    Abstract: KMM53616000AK KMM5322100BK 2MX32 1MX16
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Intro d u ctio n . DRAM Module- 13 13 DRAM for


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