Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KM416C1200BJ Search Results

    SF Impression Pixel

    KM416C1200BJ Price and Stock

    Samsung Semiconductor KM416C1200BJ-6

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM416C1200BJ-6 39
    • 1 $15.75
    • 10 $14
    • 100 $12.95
    • 1000 $12.95
    • 10000 $12.95
    		Buy Now

    sec KM416C1200BJ6

    1M X 16 FAST PAGE DRAM Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA KM416C1200BJ6 510
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    KM416C1200BJ Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416C1200BJ-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1200BJ-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1200BJ-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1200BJL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1200BJL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1200BJL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF

    KM416C1200BJ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364C224BJ KMM364C224BJ with Fast Page Mode 2M x 64 DRAM DIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C224BJ is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C224BJ consists of eight CMOS 1Mx16bits DRAMs in 42-pin SOJ


    Original     		KMM364C224BJ KMM364C224BJ 1Mx16, 2Mx64bits 1Mx16bits 42-pin 400mil 16bits PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1200BJ C M O S DRAM ELECTRO NICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416C1200BJ 1Mx16 7Tb414E GD3D331 PDF

    C1000B

    Abstract: KM416CI200BJ
    Text: KM416C1200BJ CMOS DRAM ELECTRONICS 1M x 1 6 B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416C1200BJ 1Mx16 40SOJ C1000B KM416CI200BJ PDF

    s - ck5t

    Abstract: CA52
    Text: Preliminary KMM5321200BW/BWG DRAM MODULE KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200BW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification


    OCR Scan     		KMM5321200BW/B KMM5321200BW/BWG 1Mx32 1Mx16 KMM5321200BW 42-pin 72-pin s - ck5t CA52 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE_ KMM5362203BW/BWG KMM5362203BW/BWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2M bit x 36 Dynamic RAM high density memory module. The


    OCR Scan     		KMM5362203BW/BWG KMM5362203BW/BWG 2Mx36 1Mx16 KMM5362203BW 42-pin 24-pin 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM5361203BW/BWG DRAM MODULE KMM5361203BW/BWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Sam sung KM M 5361203BW is a 1M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The


    OCR Scan     		KMM5361203BW/BWG KMM5361203BW/BWG 1Mx36 1Mx16 5361203BW KMM5361203BW cycles/16m KMM5361203BW PDF

    km44c1003cj

    Abstract: No abstract text available
    Text: Preliminary KMM5361203BW/BWG DRAM MODULE KMM5361203BW/BWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN E R A L D ESCRIPTIO N The Samsung KMM5361203BW is a 1M bit x 36 Dynamic RAM high density memory module. The FEATURES


    OCR Scan     		KMM5361203BW/BWG KMM5361203BW/BWG 1Mx36 1Mx16 KMM5361203BW 42-pin 24-pin 72-pin km44c1003cj PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE KMM5321200BW/BWG KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KM M 5321200BW is a 1M bit x 32 - KMM5321200BW 1024 cycles/16ms Ref, SOJ, Solder


    OCR Scan     		KMM5321200BW/BWG KMM5321200BW/BWG 1Mx32 1Mx16 5321200BW KMM5321200BW cycles/16ms KMM5321200BW PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE KMM5321200BW/BWG KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL OESCFIIPTION FEATURES • P art Id e n tifica tio n T h e S a m s u n g K M M 5 3 2 1 2 0 0 B W is a 1M b it x 32 - K M M 5 3 2 1 2 0 0 B W 1 02 4 c y c le s /1 6 m s Ref, S O J, S o ld e r


    OCR Scan     		KMM5321200BW/BWG KMM5321200BW/BWG 1Mx32 1Mx16 KM416C1200BJ PDF

    ODQ35

    Abstract: KM44C1003CJ
    Text: Preliminary KMM5362203BW/BWG DRAM MODULE KMM5362203BW/BWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362203BW consists of four CMOS


    OCR Scan     		KMM5362203BW/BWG KMM5362203BW/BWG 2Mx36 1Mx16 KMM5362203BW 42-pin 24-pin 72-pin ODQ35 KM44C1003CJ PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203BW/BWG KMM5362203BW/BWG with Fast Page Mode 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2Mx36bits Dynamic RAM high density memory module. The Samsung KMM5362203BW consists of four CMOS 1Mx16bits DRAMs


    OCR Scan     		KMM5362203BW/BWG KMM5362203BW/BWG 1Mx16 KMM5362203BW 2Mx36bits 1Mx16bits 42-pin 24-pin 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE KMM364C124B J KMM364C124BJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C124BJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C124BJ consists of four CMOS


    OCR Scan     		KMM364C124BJ 1Mx64 1Mx16, 1Mx16bit 42-pin 400mil 48pin 168-pin PDF

    KMM5322200BW/BWG-7

    Abstract: No abstract text available
    Text: Preliminary KMM5322200BW/BWG DRAM MODULE KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ERA L DESC RIPTIO N FEATURES The Samsung KM M 5322200BW is a 2M bit x 32 • Part Identification Dynam ic RAM high density m em ory module. The


    OCR Scan     		KMM5322200BW/BWG KMM5322200BW/BWG 2Mx32 1Mx16 5322200BW 72-pin M5322200BW KMM5322200BW KMM5322200BW/BWG-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM364C124BJ DRAM MODULE KMM364C124BJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C124BJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C124BJ consists of four CMOS


    OCR Scan     		KMM364C124BJ KMM364C124BJ 1Mx64 1Mx16, 1Mx16bit 42-pin 400mil 48pin PDF

    S/KMM5322200BW/BWG-6

    Abstract: M53222
    Text: K MM5 3 2 2 2 0 0 B W DRAM Modul e ELECTRONICS KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KM M5322200BW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200BW consists of four CMOS


    OCR Scan     		KMM5322200BW/BWG 2Mx32 1Mx16 M5322200BW KMM5322200BW 42-pin 72-pin S/KMM5322200BW/BWG-6 M53222 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM5322200BW/BWG DRAM MODULE KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200BW is a 2M bit x 32 Dynamic RAM high density memory module. The • Part Identification


    OCR Scan     		KMM5322200BW/BWG KMM5322200BW/BWG 2Mx32 1Mx16 KMM5322200BW KMM5322200BW cycles/16ms KMM5322200BWG PDF