JDV2S01E Search Results

JDV2S01E Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
JDV2S01E	Toshiba		Original	PDF
JDV2S01E-07	Toshiba	Silicon Epitaxial Planar Type VCO for UHF band	Original	PDF
JDV2S01ETH3T	Toshiba	JDV2S01ETH3T - Diode VAR Cap Single 10V 2.85pF 2-Pin ESC T/R	Original	PDF
JDV2S01ETPH3	Toshiba	DIODE VAR CAP SINGLE 10V 1.35PF 2(1-1G1A)	Original	PDF
JDV2S01ETPH3F	Toshiba	JDV2S01ETPH3F - Diode VAR Cap Single 10V 2.85pF 2-Pin ESC T/R	Original	PDF

JDV2S01E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SMV1275-079LF: Hyperabrupt Junction Tuning Varactor Applications • VHF TV tuners  VCOs Features  Cross to Toshiba JDV2S01E  Low-series resistance  High-capacitance ratio  Ultrasmall SC-79 package MSL1, 260 °C per JEDEC J-STD-020	Original	SMV1275-079LF: JDV2S01E SC-79 J-STD-020) SMV1275-079LF 03096A	PDF
marking fa Abstract: No abstract text available Text: JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.5 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit	Original	JDV2S01E 000707EAA1 designJDV2S01E marking fa	PDF
JDV2S01E Abstract: No abstract text available Text: JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band Unit: mm • Small Package • High Capacitance Ratio: C1V/C4V = 2.0 typ. • Low Series Resistance: rs = 0.5 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	JDV2S01E JDV2S01E	PDF
JDV2S01E Abstract: No abstract text available Text: JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band Unit: mm • Small Package • High Capacitance Ratio: C1V/C4V = 2.0 typ. • Low Series Resistance: rs = 0.5 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating	Original	JDV2S01E JDV2S01E	PDF
JDV2S01E Abstract: marking FA Text: JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band Unit: mm • Small Package • High Capacitance Ratio: C1V/C4V = 2.0 typ. • Low Series Resistance: rs = 0.5 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	JDV2S01E JDV2S01E marking FA	PDF
JDV2S01E Abstract: No abstract text available Text: JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band Unit: mm • Small Package · High Capacitance Ratio: C1V/C4V = 2.0 typ. · Low Series Resistance: rs = 0.5 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating	Original	JDV2S01E JDV2S01E	PDF
JDV2S01E Abstract: No abstract text available Text: JDV2S01E 東芝ダイオードシリコンエピタキシャルプレーナ形 JDV2S01E ○ UHF 帯無線 VCO 用単位: mm • 容量比が大きい。 • 直列抵抗が小さい。 : rs = 0.5 Ω 標準 • : C1V/C4V = 2.0 (標準) 2 端子小型外囲器なので､VCO の小型化に適しています。	Original	JDV2S01E JDV2S01E	PDF
JDV2S01E Abstract: No abstract text available Text: 20010126 JDV2S01E SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 1V ～ 4 V	Original	JDV2S01E 944E-16 00E-04 249E-12 00E-10	PDF
marking FA Abstract: JDV2S01E Text: JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.5 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit	Original	JDV2S01E 000707EAA1 marking FA JDV2S01E	PDF
TA4029CTC Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X Text: 製品カタログ 2011-1 東芝半導体製品カタログ高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8	Original	BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X	PDF
JDV2S31CT Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000 Text: 製品カタログ 2009-9 東芝半導体製品カタログ高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。	Original	BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000	PDF
2sc5108 Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,	Original	BCE0003E 2sc5108 toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz	PDF
sec 2sc5088 Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and	Original	BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS	PDF
MT4S300T Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476 Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones	Original	BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476	PDF

LT 543 common cathode Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current	Original	2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor	PDF
TOSHIBA RF Power Module S-AV24 Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192 Text: 高周波用半導体デバイスダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192	PDF
CMZB220 Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B Text: 東芝半導体製品総覧表 2011 年 1 月版ダイオード整流用ダイオード可変容量ダイオード高周波スイッチ用ダイオードツェナーダイオードスイッチングダイオードショットキバリアダイオード	Original	SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B	PDF
3SK73 Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112 Text: 高周波用半導体デバイスパワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112	PDF
5GHz oscillator Abstract: JDV2S01E TA4205FC 3GHz oscillator VCO Text: TA4205FC TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4205FC Use for Voltage Controlled Oscillator VCO . Features • Bias resistors and two transistors for oscillation and buffer are incorporated in one package; therefore the TA4205FC can	Original	TA4205FC TA4205FC 25GHz) 5GHz oscillator JDV2S01E 3GHz oscillator VCO	PDF
BB 505 Varicap Diode Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114 Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent	Original	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114	PDF
FET K161 Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR	PDF
marking code V6 33 surface mount diode Abstract: philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379 Text: 2004.4 Renesas Diodes Status List Topic—Low-voltage Variable Capacitance Diode Series •············2 Index ·····························································································3	Original	ADE-508-010A ADE-508-016 ADE-508-017 HVL355B HVL358B HVL368B HVL375B HVL385B marking code V6 33 surface mount diode philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379	PDF
FET K161 Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923 Text: 高周波用半導体デバイストランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923	PDF
2sc5088 horizontal transistors Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509 Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509	PDF

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JDV2S01E Search Results

JDV2S01E Datasheets (5)

JDV2S01E Datasheets Context Search

Untitled

marking fa

JDV2S01E

JDV2S01E

JDV2S01E

JDV2S01E

JDV2S01E

JDV2S01E

marking FA

TA4029CTC

JDV2S31CT

2sc5108

sec 2sc5088

MT4S300T

LT 543 common cathode

TOSHIBA RF Power Module S-AV24

CMZB220

3SK73

5GHz oscillator

BB 505 Varicap Diode

FET K161

marking code V6 33 surface mount diode

FET K161

2sc5088 horizontal transistors