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    IXFX24N100 Search Results

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    IXFX24N100 Price and Stock

    Littelfuse Inc IXFX24N100Q3

    MOSFET N-CH 1000V 24A PLUS247-3
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    DigiKey IXFX24N100Q3 Tube 300 300
    • 1 -
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    • 1000 $17.718
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    Newark IXFX24N100Q3 Bulk 300
    • 1 -
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    • 1000 $18.57
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    IXYS Corporation IXFX24N100

    MOSFET N-CH 1000V 24A PLUS 247
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    DigiKey IXFX24N100 Tube 30
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    • 100 $12.92867
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    IXYS Corporation IXFX24N100F

    MOSFET N-CH 1000V 24A PLUS247-3
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    DigiKey IXFX24N100F Tube 30
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    IXYS Corporation IXFX24N100Q3

    MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/24A
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    Mouser Electronics IXFX24N100Q3 250
    • 1 $26.53
    • 10 $21.85
    • 100 $17.94
    • 1000 $17.71
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    TTI IXFX24N100Q3 Tube 300
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    TME IXFX24N100Q3 1
    • 1 $25.8
    • 10 $25.8
    • 100 $21.91
    • 1000 $20.54
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    New Advantage Corporation IXFX24N100Q3 200 1
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    • 100 $43.67
    • 1000 $40.76
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    IXYS Integrated Circuits Division IXFX24N100Q3

    MOSFET DIS.24A 1000V N-CH PLUS247 HIPERFET THT
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    Ozdisan Elektronik IXFX24N100Q3 300
    • 1 $32.85916
    • 10 $32.85916
    • 100 $30.7095
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    IXFX24N100 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFX24N100 IXYS 1000V HiPerFET power MOSFET Original PDF
    IXFX24N100F IXYS 1000V HiPerRF power MOSFET Original PDF
    IXFX24N100Q3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 24A PLUS247 Original PDF

    IXFX24N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXFK24N100Q3 IXFX24N100Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 1000V 24A Ω 440mΩ 300ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFK24N100Q3 IXFX24N100Q3 300ns O-264 PLUS247 24N100Q3

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFK24N100Q3 IXFX24N100Q3 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 1000V 24A Ω 440mΩ 300ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFK24N100Q3 IXFX24N100Q3 300ns O-264 24N100Q3

    IXFX24N100F

    Abstract: IXFK24N100F PLUS247
    Text: IXFK24N100F IXFX24N100F HiPerRFTM Power MOSFETs VDSS = 1000V = 24A ID25 Ω RDS on ≤ 390mΩ trr ≤ 250ns F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions


    Original     		PDF IXFK24N100F IXFX24N100F 250ns 247TM 00A/s, 338B2 IXFX24N100F IXFK24N100F PLUS247

    IXFX24N100

    Abstract: IXFK24N100 PLUS247
    Text: IXFK24N100 IXFX24N100 HiPerFETTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode 1000V 24A Ω 390mΩ 250ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V


    Original     		PDF IXFK24N100 IXFX24N100 250ns O-264 24N100 10-17-08-C IXFX24N100 IXFK24N100 PLUS247

    Untitled

    Abstract: No abstract text available
    Text: VDSS = 1000V ID25 = 24A Ω RDS on ≤ 390mΩ ≤ 250ns trr IXFK24N100F IXFX24N100F HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions


    Original     		PDF 250ns IXFK24N100F IXFX24N100F 247TM 338B2

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS ID25 IXFK24N100 IXFX24N100 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode 1000V 24A Ω 390mΩ 250ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V


    Original     		PDF IXFK24N100 IXFX24N100 250ns O-264 24N100 10-17-08-C

    IXAN0009

    Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
    Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power


    Original     		PDF IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w

    Untitled

    Abstract: No abstract text available
    Text: IXTX 24N100 Power MOSFET VDSS ID25 Single MOSFET Die RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR PLUS 247TM (IXTX) 1000 1000 V V ±20 ±30 V V G


    Original     		PDF 24N100 247TM IXFK24N100/IXFX24N100 405B2

    ixfk24n100

    Abstract: No abstract text available
    Text: IXTX 24N100 Power MOSFET VDSS ID25 Single MOSFET Die = 1000 V = 24 A = 0.40 Ω RDS on trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR PLUS 247TM


    Original     		PDF 24N100 247TM IXFK24N100/IXFX24N100 405B2 ixfk24n100

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    24N10

    Abstract: No abstract text available
    Text: AdvancedTechnical Information IXFK24N100 IXFX 24N100 V DSS ^D25 R Single MOSFET Die ft> Symbol Test Conditions v Td = 25°Cto 150°C Tj =25°C to150°C ;R GS=1 Mi2 V V ±20 i3 0 V V ' ar Tc =25°C Tc =25°C, N otel Tc =25°C 24 96 24 A A A Tc =25°C Tc =25°C


    OCR Scan     		PDF IXFK24N100 24N100 to150 24N10

    TO-264 weight

    Abstract: No abstract text available
    Text: High Switching Speed Power MOSFETs F-Class HiPerRF power MOSFET ^D S S b co n t p DS on) °» PD Package style Tc = 25°C Tc = 25°C >• New V A n Fig. No. Type Outline drawings on page 91-100 > IX F H 6 0 N 2 0 F ► IXFT60N20F 200 60 60 0.038 0.038


    OCR Scan     		PDF IXFT60N20F IXFH12N50F IXFT12N50F IXFH21N50F IXFT21N50F IXFH28N50F IXFT28N50F IXFK44N50F IXFX44N50F IXFK55N50F TO-264 weight

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50